MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第223页
MIL-STD-883F METHOD 2010.11 18 June 2004 13 Condition A Conditi on B Class le vel S Class lev el B f. Scratc h in the met allizat ion that exposes the di elect ric materi al of a thi n fil m capac itor or cr ossover . (N…
MIL-STD-883F
METHOD 2010.11
18 June 2004
12
Condition A Condition B
Class level S Class level B
FIGURE 2010-10. MOS scratch criteria for class level S
. FIGURE 2010-11. MOS scratch criteria for class level B.
MIL-STD-883F
METHOD 2010.11
18 June 2004
13
Condition A Condition B
Class level S Class level B
f. Scratch in the metallization that exposes the dielectric material of a thin film capacitor or crossover. (Not
applicable to air bridges.)
g. Scratch in the bonding pad or fillet area that g. Scratch in the bonding pad or fillet area that
reduces the metallization path width connecting exposes underlying passivation or substrate
the bond to the interconnecting metallization and reduces the metallization path width
to less than 50 percent of the narrowest connecting the bond to the interconnecting
entering interconnect metallization stripe metallization to less than 50 percent of the
width. If two or more stripes enter a bonding narrowest entering interconnect metallization
pad, each shall be considered separately. stripe width. If two or more stripes enter
a bonding pad, each shall be considered
separately.
h. Scratch(es) (probe mark(s), etc.) in the bonding pad area that exposes underlying passivation or substrate and
leaves less than 75 percent of the unglassivated metallization area undisturbed.
i. For GaAs devices only, any tears, peeling, gaps, and lateral displacement of metal.
3.1.1.2 Metallization voids
;
a. Void(s) in the metallization that leaves less than a. Void(s) in the metallization that leaves less than
75 percent of the original metal width undisturbed 50 percent of the original metal width undisturbed
(see figure 2010-12). (see figure 2010-13).
FIGURE 2010-12. Void criteria for class level S
. FIGURE 2010-13. Void criteria for class level B.
NOTE: For condition B only. Criteria can be excluded
for peripheral power or ground metallization where
parallel paths exist so that an open at the void(s) would
not cause an unintended isolation of the metallization
path.
MIL-STD-883F
METHOD 2010.11
18 June 2004
14
Condition A Condition B
Class level S Class level B
b. Void(s) in the metallization over a passivation step that leaves less than 75 percent of the original metal width at
the step undisturbed.
NOTE: For condition B only. Criteria of 3.1.1.2a and b
can be excluded for the last 25 percent of the linear
length of the contact cut and all metal beyond on the
termination end(s) of metallization runs. In these cases
there shall be at least 50 percent of the contact opening
perimeter covered by undisturbed metallization (see
figure 2010-14).
FIGURE 2010-14. Termination ends
.
c. Void(s) in the metallization over the gate oxide that leaves less than 75 percent of the metallization length (L) or
width (W) between source and drain diffusions undisturbed (applicable to MOS structures only) (see figure
2010-15).