MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第425页

MIL-STD-883F METHOD 2032.2 18 June 2004 19 Class H Cla ss K 3.1. 4 c . Any c rack that exceeds 5.0 mil s in l ength 3.1.4 c. Same as Class H. (see f igure 2032- 11h). NOTE: For f used quart z or cr ystal line subst rates…

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MIL-STD-883F
METHOD 2032.2
18 June 2004
18
Class H Class K
3.1.4 Substrate defects "high magnification"
.
No element shall be acceptable that exhibits:
a. Less than 0.1 mil
of separation between a. Same as Class H.
the operating metallization and the edge
of the element unless by design
(see figure 2032-10h).
NOTE: For elements containing
wraparound conductors or for bonding pads
of RF/microwave elements that are coincident
with the element edge (as documented
on the design drawing) this criteria does
not apply. When bond pad metallization is
coincident with the element edge, a
minimum separation of 1.0 mil shall exist
between the bonding pad metallization at
the element edge and any noncommon
conductive surface.
b. A chipout that extends into the active b. Same as class H.
circuit area (see figure 2032-10h).
FIGURE 2032-10h. Class H separation and chipout criteria
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
19
Class H Class K
3.1.4 c. Any crack that exceeds 5.0 mils in length
3.1.4 c. Same as Class H.
(see figure 2032-11h).
NOTE: For fused quartz or crystalline
substrates, no cracking is allowed.
d. Any crack that does not exhibit 0.1 mil
d. 0.25 mil (see figure 2032-11k).
of separation from any active circuit
area or operating metallization (see
figure 2032-11h).
e. Any crack exceeding 1.0 mil in length e. Same as class H.
extending from the element edge directly
towards the active circuit area or
operating metallization (see figure
2032-11h).
FIGURE 2032-11h. Class H crack criteria
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
20
Class H Class K
3.1.4 f. N/A 3.1.4 f. Semicircular crack or combination of
cracks along the element edge whose total
length is equal to or greater than 75
percent of the narrowest separation
between any two bonding pads (see figure
2032-12k).
FIGURE 2032-12k. Class K semicircular crack
criterion
.
g. An attached portion of an active circuit g. Same as class H.
area from an adjacent element.
h. Any crack that does not originate at an h. Same as class H.
edge.
i. Holes through the substrate, unless by i. Same as class H.
design.