MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第94页
MIL-STD-883F METHOD 1014.11 18 June 2004 14 This page i ntenti onally lef t blank
MIL-STD-883F
METHOD 1014.11
18 June 2004
13
3.6.3 Test condition C
4
- optical gross leak. (This test may be performed in conjunction with optical fine leak C
5
.) The
completed device(s) shall be placed in the sealed test chamber. The optical interferometer shall be set to observe the
package lid(s). The chamber shall then be pressurized or evalcuated while the deformation of the lid(s) is being observed
with the optical interferometer. The deformation of the lid(s) with the pressure change, and the lack of continued
deformation of the lid(s) with the pressure (P
0
) held for time t (or equivalent procedure), will be observed for each package in
the field of view simultaneously.
3.6.3.1 Failure criteria.
A device shall be rejected for any of the following criteria:
a. If the optical interferometer did not detect deformation of the lid as the chamber pressure was changed.
b. If the interferometer detects the lid deforming as the chamber pressure is held constant (or equivalent procedure.
3.6.4 Test condition C
5
– optical fine leak . (This test may be performed in conjunction with optical gross leak C
4
.) The
completed device(s) shall be placed in the sealed test chamber. An optical interferometer is set to observe the package
lid(s). The sealed test chamber is then pressurized with Helium gas to no more than the maximum design pressure as
determined by the package manufacturer or the design limit of the chamber, which ever is less. The chamber is then
pressurized or evacuated while the deformation of the lid(s) is being measured with the optical interferometer. The
deformation of the lid(s) with the pressure change for time t (or equivalent procedure) will be measured for each package in
the field of view simultaneously.
The sealed test chamber is then pressurized with Helium gas to 30 psig. The lack of deflection of the lid(s) is then observed
with an optical interferometer for time t
2
(or equivalent procedure).
3.6.4.1 Failure criteria
. A device shall be rejected for any of the three following criteria:
a. If the interferometer did not detect proportional deformation of the lid as the chamber pressure was charged.
b. If the interferometer detects the lid deforming from the package leaking in the pressurized Helium gas during time t
as the pressure is held constant (or equivalent procedure).
3.7 Retest
. Devices which fail gross leak (test conditions C or E) may be retested destructively. If the retest shows a
device to pass, that was originally thought to be a failure, then the device need not be counted as a failure in the accept
number of sample size number calculations. Devices which fail fine leak (test conditions A
1
, A
2
, A
4
, or B) shall not be
retested for acceptance unless specifically permitted by the applicable acquisition document. Where fine leak retest is
permitted, the entire leak test procedure for the specified test condition shall be repeated. That is, retest consisting of a
second observation on leak detection without a re-exposure to the tracer fluid or gas under the specified test condition shall
not be permissible under any circumstances. Preliminary measurement to detect residual tracer gas is advisable before any
retest.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test condition letter when a specific test is to be applied (see 3).
b. Accept or reject leak rate for test condition A or B or C
5
when other than the accept or reject leak rate specified
herein applies (see 3.1.1.1, 3.1.1.2, 3.1.2, 3.2.5, and 3.6.4.1).
c. Where applicable, measurements after test (see 3).
d. Retest acceptability for test conditions A and B (see 3.7).
e. Order of performance of fine and gross if other than fine followed by gross except when using C
4
/C
5
(see 3).
f. Where applicable, the device package pressure rating shall be specified if that rating is less than 75 psia.
g. Leak testing with conditions C
4
and C
5
also includes package testing on completed assemblies (PC boards),
packages with external absorbing materials (connectors), or other special conditions.
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MIL-STD-883F
METHOD 1014.11
18 June 2004
14
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MIL-STD-883F
METHOD 1015.9
1 June 1993
1
METHOD 1015.9
BURN-IN TEST
1. PURPOSE
. The burn-in test is performed for the purpose of screening or eliminating marginal devices, those with
inherent defects or defects resulting from manufacturing aberrations which cause time and stress dependent failures. In the
absence of burn-in, these defective devices would be expected to result in infant mortality or early lifetime failures under use
conditions. Therefore, it is the intent of this screen to stress microcircuits at or above maximum rated operating conditions
or to apply equivalent screening conditions, which will reveal time and stress dependent failure modes with equal or greater
sensitivity.
2. APPARATUS
. Details for the required apparatus shall be as described in method 1005.
3. PROCEDURE
. The microelectronic device shall be subjected to the specified burn-in screen test condition (see 3.1)
for the time and temperature specified (see method 5004 for the appropriate device class level) or, unless otherwise
specified, for an equivalent time and temperature combination as determined from table I (see 3.1.1 and 3.1.2). QML
manufacturers who are certified and qualified to MIL-I-38535 may modify the time or the temperature condition
independently from the regression conditions contained in table I or the test condition/circuit specified in the device
specification or standard microcircuit drawing provided the modification is contained in the manufacturers Quality
Management Plan and the “Q" certification identifier is marked on the devices. Any time-temperature combination which is
contained in table I for the appropriate class level may be used for the applicable test condition. The test conditions
(duration and temperature) selected prior to test shall be recorded and shall govern for the entire test. Lead-, stud-, or
case-mounted devices shall be mounted by the leads, stud, or case in their normal mounting configuration, and the point of
connection shall be maintained at a temperature not less than the specified ambient temperature. Pre and post burn-in
measurements shall be made as specified. Burn-in boards shall not employ load resistors which are common to more than
one device, or to more than one output pin on the same device.
3.1 Test conditions
. Basic test conditions are as shown below. Unless otherwise specified, test condition F shall not be
applied to class level S devices. Details of each of these conditions, except where noted, shall be as described in method
1005.
a. Test condition A: Steady-state, reverse bias.
b. Test condition B: Steady-state, forward bias.
c. Test condition C: Steady-state, power and reverse bias.
d. Test condition D: Parallel excitation.
e. Test condition E: Ring oscillator.
f. Test condition F: Temperature-accelerated test.
3.1.1 Test temperature
. The ambient burn-in test temperature shall be 125°C minimum for conditions A through E
(except for hybrids see table I). At the supplier's option, the test temperature for conditions A through E may be increased
and the test time reduced in accordance with table I. Since case and junction temperature will, under normal circumstances,
be significantly higher than ambient temperature, the circuit employed should be so structured that maximum rated junction
temperature for test or operation shall not exceed 200°C for class level B or 175°C for class level S (see 3.1.1.1). Devices
with internal thermal shut-down circuitry shall be handled in accordance with 3.2.3 of method 1005. The specified test
temperature is the minimum actual ambient temperature to which all devices in the working area of the chamber shall be
exposed. This shall be assured by making whatever adjustments are necessary in the chamber profile, loading, location of
control or monitoring instruments, and the flow of air or other suitable gas or liquid chamber medium. Therefore, calibration
shall be accomplished on the chamber in a fully loaded (boards need not be loaded with devices), unpowered configuration,
and the indicator sensor located at, or adjusted to reflect the coldest point in the working area.