MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第502页

MIL-STD-883F METHOD 3011.1 15 November 1974 2 This page i ntenti onally lef t blank

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MIL-STD-883F
METHOD 3011.1
15 November 1974
1
METHOD 3011.1
OUTPUT SHORT CIRCUIT CURRENT
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to output short circuit current (I
OS
). This method applied to digital microelectronic
devices, such as TTL, DTL, RTL, and MOS.
2. APPARATUS
. A test chamber capable of maintaining the device under test at any specified temperature. An
instrument will be provided that has the capability of forcing a voltage specified in the applicable acquisition document at the
output terminal of the device under test and measuring the resultant current flowing in that terminal. The test instrument
shall also have the capability of applying specified voltage levels to all other inputs.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Each output per package shall be
tested individually.
3.1 TTL, DTL, RTL, MOS (P-Channel and N-Channel)
. Inputs of the device under test shall be conditioned in such a way
as to provide a HIGH level at the output for TTL, DTL, RTL, and MOS (N-Channel) and a LOW level at the output for MOS
(P-Channel). The output terminal shall be forced to 0 volt potential and the resultant current flow measured.
3.2 C-MOS I
OSH
. Inputs of the device under test shall be conditioned in such a way as to provide a HIGH level at the
output. The output terminal shall be forced to 0 volt potential and the resultant current flow measured.
3.3 C-MOS I
OSL
. Inputs of the device under test shall be conditioned in such a way as to provide a LOW level at the
output. The output terminal shall be forced to a voltage potential specified in the acquisition document and the resultant
current flow measured.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Input conditioning voltages.
c. Power supply voltages.
d. I
OS
max and I
OS
min limits.
MIL-STD-883F
METHOD 3011.1
15 November 1974
2
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MIL-STD-883F
METHOD 3012.1
15 November 1974
1
METHOD 3012.1
TERMINAL CAPACITANCE
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to terminal capacitance. This method applies to digital microelectronic devices,
such as TTL, DTL, RTL, ECL, and MOS.
2. APPARATUS
. The instrument shall be capable of applying a 1 MHz controllable amplitude signal superimposed on a
variable plus or minus dc voltage. The instrument will also have the capability of measuring the capacitance of this terminal
to within the limits and tolerance specified in the applicable acquisition document.
3. PROCEDURE
. This test may be performed at 25°C ±3°C. The capacitance measuring bridge shall be connected
between the input or output terminal and the ground terminal of the test circuit. The bridge shall be adjusted for a signal of 1
MHz, riding a bias level specified in the applicable acquisition document; the signal amplitude shall not exceed 50 mV rms.
With no device in the test socket the bridge shall then be zeroed. For capacitance values below 20 pF, the device shall be
connected directly to the bridge with leads as short as possible to avoid the effects of lead inductance. After inserting the
device under test and applying the specified bias conditions, the terminal capacitance shall be measured and compared to
the limits listed in the applicable acquisition document.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Circuit bias conditions.
b. Bias level at which measurements are to be made.
c. Maximum capacitance limits.