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NXE:3400B: 13 nm resolution at full productivity Supporting 5 nm logic, <15nm DRAM requirements Slide 10 New Fle x-illuminator outer sigma to 1.0 Inner sigma to 0.06 reduced PFR* (0.20) Overlay se t up Set-up and mode…
Slide 9
Throughput [
wafers
per hour]
2014
Q1
2014
Q2
2014
Q3
2014
Q4
2015
Q3
2015
Q4
2016
Q2
2016
Q4
2017
Q1
NXE:3350B
at customers
2017
Q3
2017
Q3
2018
Q1
NXE productivity reached 170 wafers per hour
On NXE:3400C in ASML factory
ATP test: 26x33mm
2
, 96 fields, 20mJ/cm
2
NXE:3400B
at customers
NXE:3350B
ASML factory
170
160
150
180
140
110
100
90
80
70
60
50
40
30
20
10
0
130
120
NXE:3300B
at customers
NXE:3300B
NXE:3350B
NXE:3400B
NXE:3400B
ASML factory
NXE:3400B
ASML factory (proto)
NXE:3400B
at customers
NXE:3400C
2019
Q1
2019
Q2
NXE:3400C
ASML factory
Public
NXE:3400B: 13 nm resolution at full productivity
Supporting 5 nm logic, <15nm DRAM requirements
Slide 10
New Flex-illuminator
outer sigma to 1.0
Inner sigma to 0.06
reduced PFR* (0.20)
Overlay set up
Set-up and modelling
improvements
Reticle Stage
Improved clamp flatness
for focus and overlay
Projection Optics
Continuously Improved
aberration performance
Wafer Stage
Flatter clamps, improved
dynamics and stability
125WPH
Reduced overhead
Improved source power
*PFR = pupil fill ratio
Overlay
Imaging/Focus
Productivity
Resolution 13 nm
Full wafer CDU
< 1.1 nm
DCO < 1.4 nm
MMO < 2.0 nm
Focus control
< 60 nm
Productivity
≥ 125 WPH
Public
Slide 11
NXE: 3400C improvements with higher productivity
Demonstrated in ASML factory, shipping to the customers
ATP test: 26x33mm
2
, 96 fields, 20mJ/cm
2
Source with Modular Vessel
collector swap <8hrs
Inline tin refill
Wafer Handler
@ ≥170WPH
Faster Reticle Align /
reduced wafer
overhead
Reticle Handler
Improved productivity
DGL Membrane
(optional)
5
5
Optics
Transmission improvement
OFP:3400B (standard)
ORION
UV-LS 2
nd
Gen
≤ 1.3 nm
Public