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Performance of NXE:3400B in the Field Slide 19 Public
Slide 18
Resist improved more than 2x in the last 6 years
Improved Line Width Roughness (LWR) and dose as measured by Z-factor*
EUVJ-2107
2013 2014 2015 2016 2017 2018 2019
Dose 50mJ 58mJ 42mJ 23mJ 21mJ 38 mJ 37mJ
LWR 4.4nm 4.0nm 4.2nm 5.3nm 5.5nm 3.8 3.5
Z-factor 4.0 3.8 3.0 2.6 2.6 2.2 1.9
*Z-factor = Res
3
x LWR
2
x Dose
16nm DL horizontal; Dipole90Y
Source: ‘Progress in EUV resists towards high-NA EUV lithography’, Xiaolong Wang et al. (PSI), SPIE 2019
2013 2015 2017 2019 2021
0
1
2
3
4
Z-Factor (10 )
-8
Public
Performance of NXE:3400B in the Field
Slide 19
Public
0%
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100%
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201814
201816
201818
201820
201822
201824
201826
201828
201830
201832
201834
201836
201838
201840
201842
201844
201846
201848
201850
201852
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201904
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201910
201912
201914
201916
201918
201920
201922
201924
201926
201928
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201932
201934
201936
NXE:3400B’s availability substantially improved in 2018
Growing installed base needs further improvements for high volume
Availability 13wma (%)
High volume manufacturing target
Data from growing installed base without configuration repair / upgrades
Weeks (2018/2019)
Maintenance
USD
Average (13wma)
6 systems
29 systems
Upgrades
Slide 20
Public