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Slide 8 EUV is being ramped up quickly now Since Jan 2018, EUV systems have run more wafers (2.5M) than 201 1-2017 combined 2013 EUV y early shipped and cumulative capacity [10 3 wafers/d ay] NXE:3400B installed base sta…
1
10
100
1,000
1985 1990 1995 2000 2005 2010 2015 2020 2025
High-NA EUV targets <7nm resolution
Relative improvement:5X over ArFi, 40% over 0.33 NA EUV
Year of introduction
Slide 7
13.5, EUV
193, ArF
248, KrF
365, i-line
436, g-line
>10x
NA+67%
Resolution, nm
= k
1
x Wavelength / NA
Wavelength, nm
>2021
i-Line 365 nm
KrF 248 nm
ArFi 193 nm
ArF 193 nm
EUV 13.5 nm
Production systems
Development systems
XT:1400
NXT:1950i
NXE:3400
High-NA
g-Line 436 nm
NA+45%
Public
Slide 8
EUV is being ramped up quickly now
Since Jan 2018, EUV systems have run more
wafers (2.5M) than 2011-2017 combined
2013
EUV yearly shipped and cumulative capacity [10
3
wafers/day]
NXE:3400B installed base stands at 38 (per
Q2 2019), cumulative EUV wafer capacity
will approach 10
8
wafers per year by 2020
2020
2019
2018
2017
0
5
10
15
20
30
35
40
27
10
#systems
in fabs
Capacity (wpd)
Cumulative
capacity (wpd)
0
5
10
15
20
25
30
35
40
Worldwide installed base (3400B)
4.5M
2019
2018
2017
2016
2015
2014
2M
1.1M
0.6M
Cumulative wafer count
38
(per Q219)
25
Installed base NXE:3400B
Cumulative EUV wafer count
Public
Slide 9
Throughput [
wafers
per hour]
2014
Q1
2014
Q2
2014
Q3
2014
Q4
2015
Q3
2015
Q4
2016
Q2
2016
Q4
2017
Q1
NXE:3350B
at customers
2017
Q3
2017
Q3
2018
Q1
NXE productivity reached 170 wafers per hour
On NXE:3400C in ASML factory
ATP test: 26x33mm
2
, 96 fields, 20mJ/cm
2
NXE:3400B
at customers
NXE:3350B
ASML factory
170
160
150
180
140
110
100
90
80
70
60
50
40
30
20
10
0
130
120
NXE:3300B
at customers
NXE:3300B
NXE:3350B
NXE:3400B
NXE:3400B
ASML factory
NXE:3400B
ASML factory (proto)
NXE:3400B
at customers
NXE:3400C
2019
Q1
2019
Q2
NXE:3400C
ASML factory
Public