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EUV : Principl es of Generation Slide 28 Public

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High-NA Field and Mask Size productivity
Throughput >185wph with Half Fields
Fast stages enable high throughput despite half fields
WS, RS, current
WS 2x, RS 4x
HF
FF
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Throughput [300mm/
hr]
Source Power/Dose [W/(mJ/cm
2
]
Throughput for various source powers and doses
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30 35
500 Watt
30 mJ/cm
2
0.33NA
High-NA
250 Watt
20 mJ/cm
2
Acceleration of mask stage ~4x..
Acceleration of wafer stage ~2x..
Public
EUV: Principles of Generation
Slide 28
Public
Laser Produced Plasma Density and Temperature
Nishihara et al. (2008)
EUV
LPP
Ion density ~ 10
17
– 10
18
#/cm
3
Temperature ~ 30 -100 eV
Slide 29
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