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Slide 13 EUV Reticle frontside protection options Public Reticle Reflected illumination EUV Reticle (13.5nm) Reticle particle pellicle Reticle w ith pellicle Clean sy stem (without pellicle)

Slide 12

World class overlay performance now at 170wph on

NXE:3400C systems

Overlay well in spec at 170 WPH throughput

DCO

MMO

Public

Slide 13

EUV Reticle frontside protection options

Public

Reticle

Reflected

illumination

EUV Reticle (13.5nm)

Reticle

particle

pellicle

Reticle with pellicle

Clean system

(without pellicle)

Slide 14

100

120

Aug-16 Nov-16 Mar-17 Jun-17 Sep-17 Dec-17 Apr-18 Jul-18 Oct-18 Feb-19

Particles added to reticle front

-side

per 10,000 wafer exposures

Reticle front-side adder performance

NXE:3350B NXE:3400B

Each data point represents between 1,000 and 10,000 wafer exposures in ASML factory or at a customer

HVM target

<1/10k

Improvements on hydrogen gas

curtain, parts cleanliness, in-situ

cleaning, factory way-of-working.

Continuous fine-tuning and

reduction of electrostatic effects

Improvement roadmap in place

to consistently meet HVM target.

Addressing particle generation,

release, and transport.

2016 20182017

Reticle front-side defectivity ~1/10k

Clean Scanner

Public