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Slide 52 EUV Collector: Normal Incidence • Ellipsoidal design • Plasma at first focus • Pow er delivere d to exposure tool at second focus (intermedia te focus) • W avelength matching across the entire collection area No…
Slide 51
Collector Protection by Hydrogen Flow
Sn droplet /
plasma
H
2
flow
Reaction of H radicals with Sn
to form SnH
4
, which can be
pumped away.
Sn (s) + 4H (g) → SnH
4
(g)
• Hydrogen buffer gas (pressure
~100Pa) causes deceleration of ions
• Hydrogen flow away from collector
reduces atomic tin deposition rate
Laser beam
Intermediate
Focus
Sn
catcher
DG
EUV collector
• Vessel with vacuum pumping to
remove hot gas and tin vapor
• Internal hardware to collect micro
particles
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Slide 52
EUV Collector: Normal Incidence
• Ellipsoidal design
• Plasma at first focus
• Power delivered to exposure tool
at second focus (intermediate
focus)
• Wavelength matching across the
entire collection area
Normal Incidence Graded
Multilayer Coated Collector
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Slide 53
Hydrogen gas central to tin management strategy
Hydrogen performs well
for all these tasks!
Requirements for buffer gas:
➢ Stopping fast ions (with high
EUV transparency)
➢ Heat transport
➢ Sn etching capability
High heat capacity
High thermal conductivity
High EUV transparency
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