S1.pdf - 第23页
Slide 23 Dose Performance and Slit uniformity show stable results Supporting requirem ents for 5 nm node CD control 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A B C D E F G H I J K L M N O P Q R S T U V W NXE:3400B Dose Sy stem Perform…
Slide 22
EUV Source operation at 250W
with 99.90% fields meeting dose spec
98.0
98.5
99.0
99.5
100.0
0
50
100
150
200
250
May 2018 June 2018 July 2018 August 2018
Source
power
(W)
Die
yield
(%)
Public
Slide 23
Dose Performance and Slit uniformity show stable results
Supporting requirements for 5 nm node CD control
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A B C D E F G H I J K L M N O P Q R S T U V W
NXE:3400B
Dose System Performance, DSP
Slit uniformity
Dose performance [%]
Public
Slide 24
0.33 NA | 13nm
NXE and EXE to drive scaling beyond the next decade
Cost-effective scaling through accelerated innovation and lithography simplification
1
Tput: Throughput upgrade (wph)
0.55 NA | 8nm
2016 2017 2018 2019 2020 2021 2022 2023 …2025
EUV
EUV
4.0nm
125wph
Matched Machine Overlay
Throughput
NXE:3350B
3.0nm
125wph
NXE:3400B Overlay
2.5nm
TPut
1
155wph
NXE:3400C
2.5nm
170wph
NXE:Next
<1.5nm
≥185wph
EXE:5000
1.7nm
185wph
Matched Machine Overlay
Throughput
EXE to be introduced at the 3 nm node for affordable scaling beyond the next decade
NXE will be extended to provide state-of-the-art overlay and node-to-node productivity improvements
Public