S1.pdf - 第24页
Slide 24 0.33 NA | 13nm NXE and EXE to drive scaling beyond the next decade Cost-effective scali ng through accel erated innovation and lithography simpl ification 1 Tput: Throughput upgra de (w ph) 0.55 NA | 8nm 2016 20…
Slide 23
Dose Performance and Slit uniformity show stable results
Supporting requirements for 5 nm node CD control
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A B C D E F G H I J K L M N O P Q R S T U V W
NXE:3400B
Dose System Performance, DSP
Slit uniformity
Dose performance [%]
Public
Slide 24
0.33 NA | 13nm
NXE and EXE to drive scaling beyond the next decade
Cost-effective scaling through accelerated innovation and lithography simplification
1
Tput: Throughput upgrade (wph)
0.55 NA | 8nm
2016 2017 2018 2019 2020 2021 2022 2023 …2025
EUV
EUV
4.0nm
125wph
Matched Machine Overlay
Throughput
NXE:3350B
3.0nm
125wph
NXE:3400B Overlay
2.5nm
TPut
1
155wph
NXE:3400C
2.5nm
170wph
NXE:Next
<1.5nm
≥185wph
EXE:5000
1.7nm
185wph
Matched Machine Overlay
Throughput
EXE to be introduced at the 3 nm node for affordable scaling beyond the next decade
NXE will be extended to provide state-of-the-art overlay and node-to-node productivity improvements
Public
Slide 25
TWINSCAN EUV Product Roadmap
Supporting customer roadmaps well into the next decade
2016 2017 2018 2019 2020 2021 2022 2023 …2025
NXE Next
<1.5nm | ≥ 185wph
NXE:3400C
2.5nm | 170wph
TPut
155
OVL
2.5nm
NXE:3400B
3.0nm | 125wph
NXE:3350B
4.0 | 125wph
EUV
0.33 NA
13nm
0.55 NA
8nm
EXE:5000
1.7nm | 185wph
EUV 0.33 NA
EUV 0.33 platform will be extended to provide state of the
art overlay and node to node productivity improvements
S3 for NXE:3400C
>250 W,
Modular vessel,
availability to ~95%
S3 (Now)
Up to 250 W (at
155 wph) + gas,
water, electrical
simplification
S2: source
power to
125W
EUV Source Next
Power scaling for throughput, dose
and stability improvements, further
step in availability.
Source horizontal to support
EXE5000.
EUV
source
EUV
scanner
S3 Intro:
source
power to
200W
Public