S1.pdf - 第26页

In the same w ay that 0.33NA enables 7nm and 5nm Logic, 0.55NA EUV w ill be needed to enable 3nm Logic Deliver continuation of shrink roadmap: EXE platform Process simplification and improved device perform ance >50% …

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Slide 25
TWINSCAN EUV Product Roadmap
Supporting customer roadmaps well into the next decade
2016 2017 2018 2019 2020 2021 2022 2023 …2025
NXE Next
<1.5nm | ≥ 185wph
NXE:3400C
2.5nm | 170wph
TPut
155
OVL
2.5nm
NXE:3400B
3.0nm | 125wph
NXE:3350B
4.0 | 125wph
EUV
0.33 NA
13nm
0.55 NA
8nm
EXE:5000
1.7nm | 185wph
EUV 0.33 NA
EUV 0.33 platform will be extended to provide state of the
art overlay and node to node productivity improvements
S3 for NXE:3400C
>250 W,
Modular vessel,
availability to ~95%
S3 (Now)
Up to 250 W (at
155 wph) + gas,
water, electrical
simplification
S2: source
power to
125W
EUV Source Next
Power scaling for throughput, dose
and stability improvements, further
step in availability.
Source horizontal to support
EXE5000.
EUV
source
EUV
scanner
S3 Intro:
source
power to
200W
Public
In the same way that 0.33NA enables 7nm and 5nm Logic, 0.55NA EUV
will be needed to enable 3nm Logic
Deliver continuation of shrink roadmap: EXE platform
Process simplification and improved
device performance
>50% cost reduction
compare to multi-patterning schemes
3 to 6x cycle time reduction for critical
layers
Best in class overlay performance
and focus performance
Public
Slide 26
High-NA Field and Mask Size productivity
Throughput >185wph with Half Fields
Fast stages enable high throughput despite half fields
WS, RS, current
WS 2x, RS 4x
HF
FF
Slide 27
Throughput [300mm/
hr]
Source Power/Dose [W/(mJ/cm
2
]
Throughput for various source powers and doses
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30 35
500 Watt
30 mJ/cm
2
0.33NA
High-NA
250 Watt
20 mJ/cm
2
Acceleration of mask stage ~4x..
Acceleration of wafer stage ~2x..
Public