S1.pdf - 第32页
Slide 32 EUV Spectra of Laser Produced Sn Plasma 10 11 12 13 14 15 16 17 18 19 20 0.0 0.2 0.4 0.6 0.8 1.0 EUV spectrum Intensit y (a rb. u.) W avelength (nm) EUV Spectrum and MLM Reflectivity 0 20 40 60 80 100 Reflec tiv…
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CE (%)
Intensity (W/cm
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Tin target, 50 m m
10 ns isquare-top laser
CE calculated with
Gaussian 2% bandwidth
10.6 m m
5.0 m m
2.0 m m
1.064 m m
532 nm
355 nm
266 nm
Slide 31
Modelled EUV CE of LPP Sn Plasma vs. Wavelength
EUV CE defined into 2% bandwidth, 2p sr solid angle
Simulation Assumptions:
• 1D modeling
• Sn flat target (50um thickness)
• Laser Pulse: 10ns duration
(rectangular)
• Uniform radial distribution of
intensity in beam spot
• Prizm Computational
Sciences, Inc., 2005
Public
Slide 32
EUV Spectra of Laser Produced Sn Plasma
10 11 12 13 14 15 16 17 18 19 20
0.0
0.2
0.4
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0.8
1.0
EUV spectrum
Intensity (arb. u.)
Wavelength (nm)
EUV Spectrum and MLM Reflectivity
0
20
40
60
80
100
Reflectivity (%)
MLM reflectivity
Peak of EUV spectrum matches the MoSi
multilayer reflectivity band at 13.5 nm
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Sn, 355nm
Sn, 1064nm
EUV mirror
Signal, (a.u.)
Wavelength, (nm)
EUV spectrum with CO
2
Laser
at 10.6 mm
EUV spectrum with Nd:YAG Laser
at 1064 nm and 355 nm
Public
Slide 33
LPP Target Material and Laser Wavelength Options
CO
2
Laser with Sn target was selected for industrialization in 2006
Public