Oxford-100-Manual.pdf - 第170页

Plasma lab Oxford Instruments Plasma Technology System Manual Roughing pump Roughing valve Sample Shower head Silane Slit valve SMC valve Specimen Substrate I wafer I specimen I sample TEOS Throttling valve Torr Turbo pu…

100%1 / 362
System
Manual
Oxford
Instruments
Plasma Technology
Plasma
lab
Micron
Micron
Millibar
Nupro
valve
Outgassing
PE
PECVD
Penning
gauge
PFPE
Pirani
gauge
Plasma
Plasma system
Platen
RF
RIE
Roots
pump
(blower)
Rotary
pump
(backing
pump,
roughing
pump,
foreline
pump)
Roughing line
Unit
of
pressure; 10-
3
Torr. Equivalent
to
the
pressure required
to
support
a
column
of
mercury
one
micron (length) high.
Unit
of
length;
10-
6
metres.
Unit
of
pressure; 1/1000
of
one
atmosphere
or
bar.
Nupro
is
a
manufacturer
of
commonly
used
pneumatically
operated
gas line
valves.
The vaporisation
of
contaminants
from
the
surfaces
of
the
components exposed
to
the
vacuum.
An
abbreviation
for
the
Plasma Etch process.
An
abbreviation
for
the
Plasma Enhanced Chemical
Vapour
Deposition process.
This
gauge
uses
a
glow
discharge
between
electrodes and a
permanent
magnetic
field. The
ion
current
varies
with
the
gas density. Used
for
checking
base pressures
down
to
10-
8
Torr. It needs
to
be calibrated
to
the
gases being
measured (see
Gas
factor).
An
abbreviation
for
perfluorised
polyether
lubricating
fluid.
This synthetic
lubricant
is
used in a
highly
oxidising
environment
where
mineral (hydrocarbon)
oils
would
deteriorate
too
rapidly.
Senses
the
thermal
conductivity
and hence
the
pressure
of
a
gas
by
the
power
required
to
maintain
the
temperature
of
a
warm
filament.
Used
to
monitor
roughing
pump
pressures
down
to
approximately
10-
3
Torr.
It
needs
to
be
calibrated
to
the
gases being measured
(see
Gas
factor).
A
region
of
electrons, positive ions and
neutral
gas particles created
between
electrodes
within
which
the
various
etching
or
deposition
processes
take
place.
This generates a plasma above a substrate
in
a vacuum chamber and
uses
the
action
of
the
plasma
to
etch
from,
or
deposit material
onto,
a substrate.
The plate,
which
supports
the
substrate
to
be processed.
An
abbreviation
for
Radio Frequency,
often
13.56 MHz.
An
abbreviation
for
the
Reactive Ion Etching process.
A
pump
having
rotating
lobes,
which
intermesh
to
give a positive displacement
of
the
pumped
gas. The parts
of
the
pump
exposed
to
the
pumped
gas are
usually self-lubricating, i.e.
lubricating
fluids are unnecessary.
Approximate
base
pressure 1 mTorr.
Short
for
Rotary Vane Pump, this consisting
of
an eccentrically
mounted
shaft
carrying spring-loaded vanes
rotating
within
a cylinder. The vanes are oil sealed.
The choice
of
lubricant
depends
upon
the
process.
Approximate
base pressure
40
mTorr
(single stage), 1 mTorr
(two
stage).
The
line
between
the
roughing
pump
and
the
chamber.
Process
Information
(Information
contained
in
this
document
is
confidential)
Printed: 08
January
2006 09:37 Page
27
of
30
Issue
1:
December 03
Plasma
lab
Oxford
Instruments
Plasma
Technology
System
Manual
Roughing
pump
Roughing valve
Sample
Shower head
Silane
Slit valve
SMC
valve
Specimen
Substrate
I
wafer
I
specimen I sample
TEOS
Throttling
valve
Torr
Turbo
pump
Wafer
Vent
A secondary
pump,
which
reduces
the
chamber pressure
from
atmospheric
to
a
point
at
which
the
high
vacuum (or main)
pump
takes over
for
a
further
reduction
of
pressure.
(See
also
rotary
pump)
The valve which,
when
open, allows
the
roughing
pump
to
pump
gas
from
the
chamber.
See
Substrate
A
form
of
top
electrode having
perforations
through
which
the
process gas
is
introduced
into
the
chamber.
A process gas, SiH4,
which
is
commonly
used in
deposition
processes.
It
is
extremely
toxic, pyrophoric, and,
under
certain conditions, explosive.
A
two-position
gate
valve used
to
seal
the
apertures
between
chambers.
SMC
is
the
manufacturer
of
commonly
used solenoid
operated
pneumatic
valves. The valves are
normally
closed, and
on
receipt
of
an electrical signal,
the
pneumatic
valve opens. In some
cases,
the
opposite
action
is
used,
for
example
to
vent
a
turbo
pump
if
system
power
is
lost.
See
substrate.
The
item
to
be processed in
the
vacuum chamber.
Abbreviation
for
Tetra Ethoxy Silane.
TEOS
is
a
liquid
at
normal
temperature
and pressure. In gaseous
form
it
is
used in
PECVD
processes.
It
is
a replacement
for
silane
in
silicon
oxide
deposition.
An
adjustable valve.
Unit
of
pressure;
11760
of
one
atmosphere
or
bar.
Short
for
turbomolecular
pump,
this being a
multistage
axial
flow
fan
rotating
at
very
high
speed.
Base
pressure
approximately
10-
9
Torr.
See
SUbstrate.
Introduce
high
purity
nitrogen
into
a chamber
or
pump
to
raise
it
to
atmospheric pressure.
Process
Information
(Information
contained
in
this
document
is
confidential)
Issue
1:
December 03 Page 28
of
30 Printed: 08 January 2006 09:37
System
Manual
NOTES:
Oxford
Instruments
Plasma
Technology
Plasmalab
Process
Information
(Information
contained
in
this
document
is
confidential)
Printed:
08
January
2006 09:37 Page 29
of
30
Issue
1: December 03