IPC-D-279 EN.pdf - 第94页
Appendix F Components Some SM component packages require special mention: F-1.0 CERAMIC LEADLESS CHIP CARRIER (CLLCC) Printed board material of high Tg and low CTE may be required to meet the reliability target. F-2.0 ME…

susceptible to light induced leakage, noise and
malfunction.
E-22.0 SOLVENTS
Exposure of components and assemblies to various sol-
vents (not normally considered a ‘‘stress’’) during assem-
bly and repair operations can result in the following
scenarios:
• loss of lubricant with subsequent accelerated wear,
particularly in variable resistors and capacitors and in
switches
• absorption and diffusion through polymeric seals with
subsequent corrosion, particularly in aluminium
capacitors when halogenated solvents, such as CFCs,
have been used
• dissolution of some wire insulation ‘‘varnish,’’ mark-
ing inks and label adhesives with subsequent contami-
nation of the cleaning system, loss of the insulation
function, or loss of identity
• dissolution or softening of plastics such as polycarbon-
ate and polystyrene, even when low activity solvents
such as CFCs have been used, solvation effects are
exacerbated when solvent blends containing methylene
chloride are used
• and absorption and deformation of silicone rubber
parts and seals in CFCs.
Because CFC based solvents are being replaced by other
solvents due to concern over ozone depleting effects, great
care must be exercised in the replacement process. For
instance, cleaning of SMT boards with a ‘‘plug in compat-
ible’’ solvent prior to paste application has been found to
greatly increase the frequency of ‘‘solder balls’’ apparently
due to chemical reactions between the thermal decomposi-
tion products of the solvent and the tin in the solder during
the soldering process. The composition, location and quan-
tity of the residual contamination will also change with
changes in the solvent.
The very high velocity solvent sprays used in the flux
removal systems designed to achieve very clean PWAs par-
ticularly in SMT are intended to clean under and between
components which are tightly fitted together. Marginal
‘‘O’’-ring seals may succumb.
IPC-D-279 July 1996
82

Appendix F
Components
Some SM component packages require special mention:
F-1.0 CERAMIC LEADLESS CHIP CARRIER (CLLCC)
Printed board material of high Tg and low CTE may be
required to meet the reliability target.
F-2.0 METAL ELECTRODE FACE BONDED (MELFs)
Metal electrode face bonded (MELFs) require either spe-
cial ‘‘U’’ shaped land patterns or adhesive to retain position
during reflow.
F-3.0 SPACING ABOVE BOARD
The maximum height of printed board mounted devices
must be considered during the planning stage of the design.
Clearance restrictions may include the housing or enclosure
proposed for the finished product or in the case of rack
mounted printed boards, line-to-line clearance between
components of one board and the surface of the parallel
mounted assembly.
Assembly systems have clearance limitations as well. Most
lower profile devices are mounted in the first stage of the
assembly process with higher profile devices added at a
later time. For excessively high profile devices, transform-
ers and large connectors for example, post assembly attach-
ment is required.
F-4.0 ALL SM PICK AND PLACE FEEDER PARTS
Sensitive or not, if they are dispensed adjacent to electro-
static discharge susceptible (ESDS) components, should be
packaged in antistatic materials.
F-5.0 COMPONENTS WITH RUBBER SEALS
Should not be used with halogenated solvents or chemicals
during production assembly, rework, field repair. This
avoids internal corrosion caused when the halogens diffuse
through the rubber seal. Aluminum electrolytic capacitors,
when used, should be epoxy sealed. The rubber seal in
rotary or slide components such as potentiometers and
switches can deform or degrade under SM reflow tempera-
tures. This seal can also allow intrusion of liquid during
high pressure or high velocity spray cleaning.
F-6.0 PLASTIC SM COMPONENTS, MOISTURE, AND SM
REFLOW PROCESSING
Plastic encapsulated surface mount components (PSMC)
can suffer from thin film stress, delamination and cracks
during SM reflow processing. These defects can lead to
dendrites, thin film cracking (TFC), damaged bonds, bond
pad cratering and corrosion, resulting in product failures
due to opens and shorts of either a permanent or intermit-
tent nature. The SM solder reflow process and, in some
cases, the high junction temperatures associated with
CMOS latch-up, causes absorbed moisture in the PSMCs
to rapid convert to steam, causing the plastic to separate or
delaminate from the die surface and inducing stress at this
interface. During accelerated life testing under biased
85°C/85% RH conditions, one major computer maker
noted a 50% decrease in MTBF on delaminated or cracked
packages compared to defect free packages.
Similar failure mechanisms affecting PSMCs during SM
reflow include voids and delamination resulting from the
reflow and expansion of internal solder joints and expan-
sion of coatings and potting compound, such as those
found in networks of passive components such as capaci-
tors, resistors, and delay lines. Also found in PSMCs are
cracking and bursting of the outer plastic housing in com-
ponents such as pulse transformers due to thermal expan-
sion of the stress-relieving silicone conformal coating.
These effects are in addition to any delamination of the
silicone from the epoxy potting compound. The CTE of the
silicone is on the order of 300 ppm/°C.
PSMC packages which contain integrated circuits (IC),
resistor networks and capacitor networks are generally
molded in an epoxy-based compound which contains silica
and other fillers and additives which help control the coef-
ficient of thermal expansion (CTE), adhesion of the mold-
ing compound (MC) to the various elements within the
package (such as the leadframe, thick film substrate, and
the IC chip), and the flexural modulus of the MC. When
the thermosetting MC is cured, it shrinks and applies stress
to the various elements in the package. This initial
manufacturing-induced stress increases at cold tempera-
tures. ‘‘Low stress’’ MC have been developed to address
this issue. Delamination and internal cracking can also
arise from this initial stress. During storage and transporta-
tion, particularly in ambients with high humidity, the plas-
tic absorbs water vapor from the environment. The water
vapor diffuses into the body of the package, ‘‘piling up’’ at
impermeable interfaces such as the back of the die attach
paddle, and the front of the IC chip. When the package is
exposed to the 220°C+ temperatures of SM solder reflow
or immersed in the 260°C wave solder, the water/vapor at
the interface rapidly expands and tends to force the MC
away from the interface.
If the adhesion of the MC is insufficient, the MC separates
(delaminates) from the leadframe, substrate or chip. The
extent of this separation may be partial or complete over
the interface, and is generally observed to initiate at corners
of the die attach paddle, at corners of the chip or lead fin-
gers (tips of the interior ends of the leadframe leads to
July 1996 IPC-D-279
83

which the bond wires are connected to complete the circuit
from the IC bond pads).
The adhesion of the MC to the leadframe can be enhanced
by topical application of coupling agents or adhesion pro-
moters such as hexamethyldisilazane. If the strength of the
MC is insufficient, this degradation process progresses to
internal cracks in the MC, generally starting at sharp edges
and corners of the various elements in the package. If the
strength of the MC is inadequate, the cracks can progress
in the worst case to emerge on the surface of the package.
In milder cases, the cracks are internal and may terminate
on the lead fingers. ANSI/IPC-SM-786 illustrates these
progressive stages. Because stress concentration is known
to be very strongly dependent upon the radius at the edges
of the die attach paddle, a suggested crack reduction tech-
nique is to increase the radius at these edges.
Another result of moisture absorption by the plastic is an
apparent decrease in the glass transition temperature (Tg)
of the MC. This change in Tg means that the moist plastic
expands and contracts more with changes in temperature
due to soldering processes than when the package was ini-
tially manufactured. Because the CTE of the MC is much
higher than the CTE of the chip, substrate or leadframe, the
MC expands and contracts with respect to these other ele-
ments, introducing additional stress at the interface. This
stress, in the case of ICs, can result in bond pad cratering
and is additional to the stress caused by the initial IC pack-
age curing process. Moist PSMCs exposed to temperature
cycling demonstrate a rapid progressive delamination and
product failure; dry PSMCs exposed to the same T/C con-
ditions show very slow progressive delamination. The con-
clusion is that vulnerable PSMCs can be robust to delami-
nation under T/C if kept dry.
F-6.1 Shorts and Resistive Shorts in PSMCs
In common with through hole (TH) components, PSMCs
suffer from metallic dendrites between the lead fingers and
between leads. Dendrites are very thin, fragile metal
‘‘branches’’ which can be destroyed by casual contact or by
currents on the order of several hundred microamperes.
Dendrites form on surfaces and in cavities when the fol-
lowing conditions are present: continuous liquid water film
thicker than several molecules; hydrolyzable, ionizable
contaminant, particularly halides and acids, typically from
solder flux but may also be extracted from the MC by the
diffusing moisture; metallic conductors, particularly silver,
copper, lead and tin (where halides are present, gold will
also dendrite); electrical DC bias at low current levels
between the conductors. See also IPC-TR-476A.
Liquid water films occur in the package (or on the printed
board surface) when: the ambient humidity (relative
humidity) is high; the exposure duration is sufficient to
saturate the package (weeks to months at 25-35°C); there
is delamination, cracking or voiding in the package due to
initial manufacturing conditions or subsequent assembly
operations; there is power dissipated in the package insuf-
ficient to keep the water in the vapor state.
Where the ambient temperature is suddenly reduced, we
would expect that internal moisture vapor will condense at
the interfacial voids. When cold parts are exposed to a
humid environment, we expect superficial condensation.
Dendrites have been observed to be a result of: polyimide
film delamination from the MC; voids in the MC due to
improper material handling or due to improper process
parameters during the molding process; cracks between
lead fingers due to mechanical stresses applied during IC
manufacturing processes such as trim/form and thermal
shock stresses applied during IC manufacturing processes
such as solder dip; cracks between lead fingers due to
printed board assembly processes such as TH insertion and
SM pick-and-place; delamination along lead fingers and
leads which extend to the external surface of the package.
Cratering in silicone or GaAs ICs shows up under bonding
pads as cracks due to stresses introduced by the wire bond-
ing process. Cracks can grow during thermal shocks and
temperature cycling, allow metals such as aluminum to
move from the pad to the underlying semiconductor mate-
rial, and are manifested as a resistive short from the bond-
pad to or through the underlying junction.
F-6.2 Opens and Intermittent Opens in PSMCs
Opens have been traced to wirebreaks where the MC is
cracked, whether the crack originates from the chip, die
attach paddle, or lead finger.
Predictions by finite element analysis and data from pack-
aging stress test chips indicate the highest molding and
thermo-mechanical stresses will occur at the corners of ICs
and substrates.
Opens in metal conductors have been traced to stressed
metal patterns (thin film cracking or TFC) in the corner of
IC chips. Experiments with planarized passivation/metal
patterns show metal damage when delamination is NOT
seen. Experiments with non-planarized patterns show metal
damage when delamination IS seen. Planarization of the
passivation/metal patterns was introduced in ICs to mini-
mize stresses transmitted to the patterns by the initial mold-
ing process. Minimized stresses are also the focus of the
‘‘low stress’’ holding compound formulations.
Corrosion and open metal conductors occur on IC chip
surfaces when the passivation is stressed and ruptured and
the package experiences the conditions described under
‘‘dendrites.’’ Where the passivation structure includes a
phosphorous pentoxide, P
2
O
5
, rich silicon oxide layer, a
liquid water film can react with the P
2
O
5
, creating phos-
phoric acid, an excellent dissolver of the aluminum metal
conductors. This effect has been mitigated by incorporating
IPC-D-279 July 1996
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