Utah-94-721002-System-Manual.pdf - 第170页
mä~ëã~ä~Ä = lñÑç êÇ=fåë íêìãÉåí ë=m ä~ë ã~=qÉÅÜåçäçÖó= System Manual Roughing pump A secondary pump, which reduces the chamber pressure from atmospheric to a point at which the high vacuum (or main) pump takes over for a…
System Manual= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= mä~ëã~ä~Ä
Micron
Unit of pressure; 10
-3
Torr. Equivalent to the pressure required to support a
column of mercury one micron (length) high.
Micron
Unit of length; 10
-6
metres.
Millibar Unit of pressure; 1/1000 of one atmosphere or bar.
Nupro valve Nupro is a manufacturer of commonly used pneumatically operated gas line
valves.
Outgassing The vaporisation of contaminants from the surfaces of the components exposed
to the vacuum.
PE An abbreviation for the Plasma Etch process.
PECVD An abbreviation for the Plasma Enhanced Chemical Vapour Deposition process.
Penning gauge This gauge uses a glow discharge between electrodes and a permanent
magnetic field. The ion current varies with the gas density. Used for checking
base pressures down to 10
-8
Torr. It needs to be calibrated to the gases being
measured (see Gas factor).
PFPE An abbreviation for perfluorised polyether lubricating fluid. This synthetic
lubricant is used in a highly oxidising environment where mineral (hydrocarbon)
oils would deteriorate too rapidly.
Pirani gauge Senses the thermal conductivity and hence the pressure of a gas by the power
required to maintain the temperature of a warm filament. Used to monitor
roughing pump pressures down to approximately 10
-3
Torr. It needs to be
calibrated to the gases being measured (see Gas factor).
Plasma A region of electrons, positive ions and neutral gas particles created between
electrodes within which the various etching or deposition processes take place.
Plasma system This generates a plasma above a substrate in a vacuum chamber and uses the
action of the plasma to etch from, or deposit material onto, a substrate.
Platen The plate, which supports the substrate to be processed.
RF An abbreviation for Radio Frequency, often 13.56 MHz.
RIE An abbreviation for the Reactive Ion Etching process.
Roots pump (blower) A pump having rotating lobes, which intermesh to give a positive displacement
of the pumped gas. The parts of the pump exposed to the pumped gas are
usually self-lubricating, i.e. lubricating fluids are unnecessary. Approximate base
pressure 1 mTorr.
Rotary pump (backing
pump, roughing
pump, foreline pump)
Short for Rotary Vane Pump, this consisting of an eccentrically mounted shaft
carrying spring-loaded vanes rotating within a cylinder. The vanes are oil sealed.
The choice of lubricant depends upon the process. Approximate base pressure
40 mTorr (single stage), 1 mTorr (two stage).
Roughing line The line between the roughing pump and the chamber.
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 27 of 30 Issue 1: December 03
mä~ëã~ä~Ä= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= System Manual
Roughing pump A secondary pump, which reduces the chamber pressure from atmospheric to a
point at which the high vacuum (or main) pump takes over for a further
reduction of pressure. (See also rotary pump)
Roughing valve The valve which, when open, allows the roughing pump to pump gas from the
chamber.
Sample See Substrate
Shower head A form of top electrode having perforations through which the process gas is
introduced into the chamber.
Silane A process gas, SiH
4
, which is commonly used in deposition processes. It is
extremely toxic, pyrophoric, and, under certain conditions, explosive.
Slit valve A two-position gate valve used to seal the apertures between chambers.
SMC valve SMC is the manufacturer of commonly used solenoid operated pneumatic
valves. The valves are normally closed, and on receipt of an electrical signal, the
pneumatic valve opens. In some cases, the opposite action is used, for example
to vent a turbo pump if system power is lost.
Specimen See substrate.
Substrate / wafer /
specimen / sample
The item to be processed in the vacuum chamber.
TEOS Abbreviation for Tetra Ethoxy Silane. TEOS is a liquid at normal temperature
and pressure. In gaseous form it is used in PECVD processes. It is a replacement
for silane in silicon oxide deposition.
Throttling valve An adjustable valve.
Torr Unit of pressure; 1/760 of one atmosphere or bar.
Turbo pump Short for turbomolecular pump, this being a multistage axial flow fan rotating
at very high speed. Base pressure approximately 10
-9
Torr.
Wafer See Substrate.
Vent Introduce high purity nitrogen into a chamber or pump to raise it to
atmospheric pressure.
Process Information (Information contained in this document is confidential)
Issue 1: December 03 Page 28 of 30 Printed: 08 January 2006 09:37
System Manual= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= mä~ëã~ä~Ä
NOTES:
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 29 of 30 Issue 1: December 03