IPC-7095C-2013.pdf - 第33页

4.2.2 Flip Chip The flip chip (or direct-chip-attach) design eliminates the need for wires and die attach. In this design, the pre-bumped die is flipped circuit side down and the lands on the circuit side of the die are br…

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from the die to the solder ball array. In the basic three
designs, the signal is carried by wire, conductive material
(flip chip) or conductive ribbon-lead. The substrate can be
ceramic or organic. The package properties will depend on
the properties of the substrate material and its dimensional
parameters. The following descriptions represent the more
common methodology for die-to-package assembly.
4.2.1 Wire Bond There are two main forms of the wire
bonded BGA. They are chip-on-board (COB) with the
active surface of the die facing away from the substrate,
and board-on-chip (BOC) types with the active surface of
the die facing toward the substrate. In both these structures,
the bond pads on the die are generally furnished at the
periphery and the wire bonds are made from the die periph-
ery to the lands on the substrate surrounding the die.
The die can be attached to the substrate using conductive
or nonconductive adhesive. Use of electrically conductive
adhesive is specified when the die backside requires an
electrical connection. The drawback is that the substrate
area under and equivalent to size of the die cannot be
accessed for in-package circuit routing. If the die does not
require a backside electrical connection, then a nonconduc-
tive adhesive can be used to place the die on the substrate.
In this case, the area under the die can be used for signal
routing.
The adhesive selected for die attach must not adversely
affect the mechanical integrity of the traces or the integrity
of the electrical signal. Following die attach and adhesive
curing process, the die is ready for electrical interface to
the substrate base. The bond pads on the die are connected
electrically to the bond pads on the substrate using gold
wire or aluminum wire where feasible. The traces on the
substrate route the signals from wire bond pads to the ball
grid array on the bottom of the substrate through plated via
holes. Following the wire-bond process, the die and bond
area is typically protected by encapsulation. Encapsulation
material can be applied in the form of glob top or it can be
molded in a press. An alternative to encapsulation is the
post-assembly attachment of a pre-molded cover.
In the BOC or die face-down structure, the bond pads on
the die can be located at the die periphery or in a row or
rows at the center of the die. The substrate is designed with
a narrow slot to accommodate the row or rows of bond
pads on the die. The die-to-substrate adhesive is placed to
the right and left of the bond pads. The adhesive can be
applied in the form of a paste or a film. The active or cir-
cuit side of the die is attached face-down onto the substrate
with the substrate slot exposing the bond pads on the die
typical of that shown in Figure 4-2.
Following die attachment and adhesive cure, the bond pads
on the die are wire-bonded to the corresponding pads sur-
rounding the slot on the substrate. Following wire-bond,
the wires and exposed die surface are encapsulated for pro-
tection. Note that one or more grid array rows will need to
be depopulated to allow the slot in the substrate for wire
bond to the die. Also note that the wire bonding is accom-
plished at the center of the die and does not require
additional peripheral area around it for die-to-substrate
interface. Figure 4-3 illustrates the top and bottom of a
mold-encapsulated BGA package.
IPC-7095c-4-2
Figure 4-2 BOC BGA Construction
Top
Bottom
IPC-7095c-4-3
Figure 4-3 Top of Molded BOC Type BGA
IPC-7095C January 2013
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Copyright IPC-Association Connecting Electronics Industries
Provided by IHS under license with IPC
Not for Resale
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4.2.2 Flip Chip The flip chip (or direct-chip-attach)
design eliminates the need for wires and die attach. In this
design, the pre-bumped die is flipped circuit side down and
the lands on the circuit side of the die are brought into
contact with corresponding lands on a substrate using sol-
der or conductive adhesive. The die bond pads, however,
are not immediately compatible with either solder or con-
ductive adhesive attachment processes. Solder bumping
with a solder compatible alloy composition before the die
wafer is sawed is one of the most common procedures. The
solder material and the bumped-pad structure materials are
chosen to optimize electrical and mechanical connection
typical of that shown in Figure 4-4.
Conductive adhesive or polymer attachment can be adapted
as well; however, the die bump contact may require a
‘noble’ alloy that is compatible with the conductive alloy
particles in the adhesive. This alloy bump or ball can be
applied to the die bond pads by plating or ball bonding
processes. If a solder or an isotropic conductive adhesive is
used, the gap between the die and the substrate may require
an under-die-filling with epoxy to ensure mechanical integ-
rity of the die-to-substrate interface. Use of an anisotropi-
cally conductive material eliminates the need for added
underfill. After attaching the die to the substrate, it is typi-
cally encapsulated, coated, or over-molded for protection.
4.3 Standardization Standardization of BGA packaging
has considered a number of physical variables including
the diameter of the individual ball, the positional accuracy
of the ball in relationship to a true position within the com-
ponent outline.
4.3.1 Industry Standards for BGA For more detail
regarding package variation, mechanical feature dimen-
sions and allowable physical tolerances, refer to the follow-
ing JEDEC developed guidelines for BGA packaging.
4.3.1.1 BGA Package JEDEC Publication JEP95,
Section 4.14 defines a ball and column grid array package
family. A ball grid array (BGA) package or column grid
array (CGA) is a square or rectangular 1.50, 1.27, and
1.00 mm pitch package with an array of metallic balls or
columns on the underside of the package. The main body
of the package has a metallized circuit pattern applied to a
dielectric structure. To this package body, the semiconduc-
tor die(s) are attached to either the top or bottom surface.
On the underside of the dielectric is an array pattern of
metallized balls/columns which form the mechanical and
electrical connection from the package body to a mating
feature such as a printed circuit board. The surface that
contains the die may be encapsulated by various techniques
to protect the semiconductor.
4.3.1.2 Fine Pitch BGA Package JEDEC Publication
JEP95, Section 4.5 defines an FBGA package as a reduced-
pitch (<1.00 mm) version of a BGA package. The carrier
body of the package has a metallized circuit pattern applied
to a dielectric structure. One or more semiconductor
devices are attached to either the top or the bottom surface
of this dielectric carrier. On the underside of the dielectric
carrier is an array pattern of metallized balls, which form
the mechanical and electrical connection from the package
body to a mating feature such as a printed circuit board.
The surface that contains the die may be encapsulated
by various techniques to protect the semiconductor.
The requirements for a square FBGA package family
allows three optional contact pitch variations: 0.50, 0.65,
and 0.80 mm and defines four device profile (height) varia-
tions as well. Additionally, a 0.75 mm contact pitch has
been included on the Die Size BGA (DSBGA) package
guideline, thus providing four pitch variations for the die
size device family.
The total profile height of the FBGA as measured from the
seating plane to the top of the component is >1.70 mm. The
low-profile fine-pitch ball grid array (LFBGA) is a
reduced-height version of an FBGA. The total profile
height of the LFBGA as measured from the seating plane
to the top of the component is no greater than 1.20 mm.
Thin profile fine pitch ball grid array (TFBGA) is a
reduced-height version of an FBGA with a total profile
height as measured from the seating plane to the top of the
component that does not exceed 1.00 mm and the very thin
profile fine pitch ball grid array (VFBGA) is a reduced-
height version of an FBGA with a total profile height as
measured from the seating plane to the top of the compo-
nent that is at or below 0.80 mm.
The JEDEC design guide for FBGA allows the manufac-
turer the option to increase ball diameter as the spacing or
pitch between ball contact centers increase as compared in
Table 4-1. The JEDEC FBGA and FRBGA design guide
does not support the 0.75 mm pitch; however, the industry
has registered some nonconforming parts with that pitch.
These are non-JEDEC packages.
The larger ball diameter option has been allowed to accom-
modate packages using rigid interposer structures. The
larger diameter ball may compensate, to a degree, for the
wide mismatch of the coefficient of thermal expansion
(CTE) between the silicon die and the rigid PCB structure.
IPC-7095c-4-4
Figure 4-4 Flip-Chip (Bumped Die) on BGA Substrate
Heat Spreader
Thermal Paste
Flip Chip Solder Balls
Package Substrate
BGA Solder Balls
Circuit Board
Underfill
Die
January 2013 IPC-7095C
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Copyright IPC-Association Connecting Electronics Industries
Provided by IHS under license with IPC
Not for Resale
No reproduction or networking permitted without license from IHS
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4.3.1.3 Fine Pitch Rectangular BGA Package JEDEC
Publication JEP95, Section 4.6 defines a fine-pitch, rectan-
gular ball grid array (FRBGA) has an array of metallic
balls on the underside of the package. The substrate or car-
rier of the package has a rectangular shape with a metal-
lized circuit pattern applied to either or both sides of a
dielectric structure. Generally described with the same gen-
eral terms noted in the JEP95, Section 4.5, the body size
for an FRBGA is defined by the D and E dimensions.
Dimension D is the size of the body when measured paral-
lel to the major axis of the package, and dimension E is the
size measured parallel to the minor axis. Thus, for rectan-
gular packages, D will have a larger value than E.
4.3.1.4 Die Size BGA Package JEDEC Publication
JEP95, Section 4.7 defines a die-size ball grid array
(DSBGA) package. A Die-size Ball Grid Array has an array
of metallic balls on the underside of the package. The sub-
strate or carrier of the package may have a square or rect-
angular shape with a metallized circuit pattern applied to
either or both sides of a dielectric structure. The semicon-
ductor die is attached to the top surface of this dielectric
carrier. On the underside of the dielectric, the array pattern
of metallized balls provides the mechanical and electrical
connection from the package body to the next level com-
ponent such as a printed circuit board. The surface to
which the die is attached may be encapsulated by various
techniques to protect the semiconductor. The size of the
substrate or carrier is as close to the die size as practically
possible.
A ‘die-size’ ball grid array (DSBGA) is a type of BGA
package where the body size is defined to coincide as
closely as possible with a specific die size. This package is
sometimes called a ‘real chip-size’ BGA or CSP. The
dimensions of the package body accommodate assembly
only of a die with a specific size, and these body dimen-
sions will change as a result of future changes in die size.
The outline of the package may be square or rectangular,
but this aspect ratio may also change as a given package is
redesigned to conform to a new die size. The aspect ratio
will likely differ for devices of the same functionality from
multiple suppliers. The controlling factor for the standard-
ization of DSBGA packages is the size and aspect ratio of
the ball array.
The D and E dimensions define the body size for a DSBGA
package. For packages with a rectangular ball matrix, the
matrix determines the orientation of the dimensions.
Dimension D is the body size measured parallel to the
major axis of the ball matrix, and dimension E is the body
size measured parallel to the minor axis of the ball matrix.
Thus for rectangular packages, D will not necessarily have
a larger value than E as would be the case for an FRBGA
package per JEDEC JEP95, Section 4.6. A DSBGA pack-
age with a square ball matrix should follow the usual
JEDEC convention where D is greater than E. The maxi-
mum values for both D and E are defined in JEDEC Pub-
lication 95 using 0.50 mm increments. The values are
determined by rounding the actual DSBGA body size
upward to the next 0.50 mm boundary. Thus, D and E val-
ues have the form y.00 or y.50 following this procedure.
The array pitch for a DSBGA package will not necessarily
be equal for the D and E matrix dimensions. When the
pitches are not equal, ball dimensions and tolerances for
the smaller of the two pitches will govern the definition of
related package dimensions and tolerances. The controlling
pitch of the array of balls on a DSBGA package is always
less than 1.0 mm. The contact pitch variations for the
DSBGA described in JEP95, Section 4.7, are 0.80, 0.75,
0.65 and 0.50 mm.
4.3.2 Ball Pitch Ball Grid Arrays are divided up into two
groups of pitches. The first group includes both plastic and
ceramic package outlines allowing 1.50, 1.27, and 1.00 mm
contact pitch variations. The second group is designated
as a fine-pitch and die size BGA package family allowing
ball contact pitch variations of 0.80, 0.75, 0.65, 0.50, 0.40,
0.30, and 0.25 mm for the die size BGA. Few component
manufacturers are currently providing parts with 1.5 mm
pitch, as the pressure is on form factor in order to keep
BGAs as small as possible and although ball pitch of
0.40 mm and less are allowed, the applications may be
limited for conventional surface mount assembly due to
difficulty in processing. Pitch plays a large role in the deter-
mination of what ball diameters can be used in various
combinations. Table 4-2 shows the characteristics of those
balls that are used with pitches of 0.5 mm through 1.5 mm
for PBGAs while Table 4-3 shows the future balls for
DSBGAs.
Table 4-1 JEDEC Standard JEP95-1/5
Allowable Ball Diameter Variations for FBGA
Ball Pitch
Ball Diameter/mm
Min. Nom. Max.
0.50 0.25 0.30 0.35
0.65 0.25 0.30 0.35
0.65 0.35 0.40 0.45
0.80 0.25 0.30 0.35
0.80 0.35 0.40 0.45
0.80 0.45 0.50 0.55
Table 4-2 Ball Diameter Sizes for PBGAs
Nominal Ball
Diameter (mm)
Tolerance
Variation (mm) Pitch (mm)
0.75 0.90 - 0.65 1.5, 1.27
0.60 0.70 - 0.50 1.0
0.50 0.55 - 0.45 1.0, 0.80
0.45 0.50 - 0.40 1.0, 0.80, 0.75
0.40 0.45 - 0.35 0.80, 0.75, 0.65
0.30 0.35 - 0.25 0.80, 0.75, 0.65, 0.50
IPC-7095C January 2013
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Copyright IPC-Association Connecting Electronics Industries
Provided by IHS under license with IPC
Not for Resale
No reproduction or networking permitted without license from IHS
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