IPC-TM-650 EN 2022 试验方法.pdf - 第305页

5.3 Calculation of Results 5.3.1 Average Bow and Twist Results Bow and Twist = Sum of the Measured Maximum Vertical Displacements in mm [in] Number of Test Specimens 5.3.2 Maximum Bow and Twist Results The maximum vertic…

1.0

Scope

This

method covers the measurement of bow

and twist by maximum vertical displacement of an unre-

strained panel of either cut to size panels or finished rigid

printed boards including single- and double-sided, multilayer,

and the rigid segments of rigid flex printed circuits. This test

method is only applicable to laminates greater than or equal to

0.5 mm [0.020 in] in thickness. This test method can also be

used after etching or after thermal stress with requirements as

agreed between user and vendor.

2.0

Applicable Documents

None

3.0 Test Specimen

The

test specimen for incoming

inspection shall be 300 x 300 mm ± 2mm[12x12in±0.08

in] in size. For smaller panel sizes and finished printed wiring

boards, use actual size. A minimum of three specimens is

required per sample, when evaluating pressed laminate

sheets.

4.0

Apparatus

4.1

Sample

Shear

4.2

Granite

Surface Plate or Equivalent

4.3

Feeler

Gauges or Equivalent

4.4

Micrometer

5.0

Test Procedure

5.1 Preparation of the Test Specimen

5.1.1

For

laminate sheet, the test specimens are to be cut

in such a fashion as to minimize mechanical flexing.

5.1.2

For

cut to size panels or printed wiring boards, use

actual size.

5.1.3

Mark

the specimen for traceability. No mechanical or

chemical pre-cleaning is permitted on the specimens.

5.2

Measurement of Bow and Twist

5.2.1

Place

the test panels on the surface plate such that

the maximum vertical displacement is observed. The panel

should be turned over in establishing the maximum vertical

displacement. The maximum vertical displacement may be a

corner or a side of the test specimen as illustrated in Figures

1 and 2.

5.2.2

Measure

the maximum vertical displacement by

inserting the feeler gauges between the surface plate and the

bottom surface of the laminate.

5.2.3

Verify

the thickness measurement by measuring the

total thickness of the feeler gauges with the micrometer.

5.2.4

Record

the maximum vertical displacement in 0.25

mm [0.01 in]. One value is recorded per test specimen. This is

the bow and twist of the test specimen.

IPC-24221-1

Figure

IPC-24221-2

Figure

The

Institute for Interconnecting and Packaging Electronic Circuits

2215 Sanders Road • Northbrook, IL 60062-6135

IPC-TM-650

TEST

METHODS MANUAL

Number

2.4.22.1

Subject

Bow

and Twist—Laminate

Date

5/93

Revision

Originating Task Group

Material

in this Test Methods Manual was voluntarily established by Technical Committees of the IPC. This material is advisory only

and its use or adaptation is entirely voluntary. IPC disclaims all liability of any kind as to the use, application, or adaptation of this

material. Users are also wholly responsible for protecting themselves against all claims or liabilities for patent infringement.

Equipment referenced is for the convenience of the user and does not imply endorsement by the IPC.

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5.3

Calculation of Results

5.3.1 Average Bow and Twist Results

Bow and Twist =

Sum of the Measured Maximum

Vertical Displacements in mm [in]

Number

of Test Specimens

5.3.2

Maximum Bow and Twist Results

The

maximum

vertical displacement in mm [in] obtained for each lot of

material.

6.0 Notes

6.1

This

is the referee method; other methods of measure-

ment are allowable, if agreed upon between user and vendor.

IPC-TM-650

Number

2.4.22.1

Subject

Bow

and Twist—Laminate

Date

5/93

Revision

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1.0

Scope

This

test method establishes a procedure for

determining the flatness of silicon wafers coated with depos-

ited organic films.

2.0

Applicable Documents

ASTM D 618

Standard

Practice for Conditioning Plastics and

Electrical Insulating Materials for Testing

3.0

Test Specimen

The

test specimens are 125 mm diam-

eter silicon wafers 625 ± 15 µm in thickness. The surface of

the wafers must be clean, and at least one side of the wafers

must be polished. A minimum of 9 wafers are required.

4.0

Apparatus or Material

4.1 Radius Of Curvature Measurement Device

Flexus

Thin

Film Stress Measuring Apparatus (TFSMA) Model 2-300

or equivalent.

4.2

Wafer Thickness Measurement Device

Micrometer

capable

of measuring accurately to 5 µm. A thickness gauge

including weights can also be purchased from Flexus that can

be used with the TFSMA to measure thickness.

4.3

Film Thickness Measurement Device

Nanospec

Model

210, Tencor AlphaStep, or equivalent film thickness

measurement device capable of measuring accurately to 0.1

µm.

5.0

Procedure

5.1 Radius Of Curvature Of Uncoated Wafers

5.1.1

Label

each wafer with a unique identification.

5.1.2

Measure

the thickness of the uncoated silicon wafers.

5.1.3

Measure

the radius of curvature of the uncoated

wafers following the manufacturers recommended procedure.

5.2

Coat Wafers

5.2.1

Use

a minimum of three film thicknesses for each

polymer or processing condition investigated. The film thick-

nesses should span as large a range as possible, e.g., 5, 10

and 15 µm. Coat at least three wafers for each film thickness

for a minimum of nine wafers.

5.2.2 Coat

the polymer solution onto the back (unpolished

side) of the silicon wafers using manufacturer s recommended

deposition technique (e.g., spin coating). Process the coating

according to the manufacturer s recommended procedures.

The final film thickness must not vary by more than 2% across

the substrate surface.

5.3

Radius of Curvature Of Coated Wafers

5.3.1

The

coated wafers should be conditioned at 23 ± 2°C

and 50 ± 5% relative humidity for exactly 24 hours prior to

testing. Many polymers exhibit stress relaxation or a decrease

in stress associated with moisture absorption, therefore it is

essential that the coated wafers are equilibrated under identi-

cal conditions. Refer to ASTM D 618.

5.3.2

Measure

the radius of curvature of the coated wafers

following the equipment manufacturer’s recommended proce-

dure. Correct placement of the wafers in the device is essen-

tial to compensate for nonuniform wafers, therefore the wafer

must be placed in the same position for each measurement.

At this point the coating thickness is unknown; however,

some value may be required by the curvature measurement

device. Use whatever number is convenient for now, the data

will be edited later.

5.3.3

Repeat

step 5.3.1 four (4) times for each wafer. The

reason for the repeated measurements is to generate an aver-

age to compensate for errors in placing the wafer in the cur-

vature measurement device at the exact position in which it

was originally measured during step 5.1.3.

5.4

Film Thickness Measurements

Measure

the film

thickness on each coated wafer to an accuracy of 0.1 µmor

better using the film thickness measurement device. The

thickness should be measured at several different locations to

compensate for nonuniform coatings.

5.7

Calculations

The

Institute for Interconnecting and Packaging Electronic Circuits

2215 Sanders Road • Northbrook, IL 60062-6135

IPC-TM-650

TEST

METHODS MANUAL

Number

2.4.22.2

Subject

Substrate

Curvature: Silicon Wafers with Deposited

Dielectrics

Date

7/95

Revision

Originating Task Group

Deposited Dielectric Task Group (C-13a)

Material

in this Test Methods Manual was voluntarily established by Technical Committees of the IPC. This material is advisory only

and its use or adaptation is entirely voluntary. IPC disclaims all liability of any kind as to the use, application, or adaptation of this

material. Users are also wholly responsible for protecting themselves against all claims or liabilities for patent infringement.

Equipment referenced is for the convenience of the user and does not imply endorsement by the IPC.

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