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SEMI E33-94 © SEM I 1994 2 3.4 el ectrostatic dis charge (ESD ) — T he transfer of electrostati c charge betw ee n bodies at di fferent electrostatic potentials. 3.5 EL F — Extremely low f requen c y ( about 1 Hz to 1 kH…

SEMI E33-94 © SEMI 19941

SEMI E33-94

SPECIFICATION FOR SEMICONDUCTOR MANUFACTURING FACILITY

ELECTROMAGNETIC COMPATIBILITY

NOTICE: This standard does not purport to address

safety problems associated with its use. It is the

responsibility of the user of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to the

use.

1 Introduction

1.1 Purpose — The purpose of thi s specification is to

assure that semiconductor manufacturing facilities and

the equipment used for manufacturing semiconductor

devices will operate together reliably without failures

caused by electromagnetic interference or electrostatic

discharge. This goal is generally known as

“electromagnetic compatibility” or EMC.

1.2 Scope — This specification app lies to facilities

and equipment constructed for the purpose of

manufacturing semiconductor devices including all

facilities alarm, safety, communications and control

systems, processing equipment, metrology equipment,

automation equipment, and information technology

equipment.

1.3 Limitations — This specification does not apply to

the equipment and facilities used for the assembly and

functional testing of integrated circuits. This

specification does not apply to process-specific

charging that may occur to semiconductors under

manufacture.

2 Referenced Documents

2.1 ANSI, C63.4-1991

— America n National

Standard for Methods of Measurement of Radio-Noise

Emissions from Low-Voltage Electrical and Electronic

Equipment in the Range of 9 kHz to 40 GHz

2.2 CISPR, Publication 22, 19852

— Limits and

Methods of Measurement of Radio Interference

Characteristics of Information Technology Equipment

2.3 CENELEC, EN 55 022, 1987

— Modifications to

CISPR 22

1 IEEE Service Center, 445 Hoes Lane, P.O. Box 1331, Piscataway,

NJ 08855.

2 Sales Department of the Central Office of the IEC, P.O. Box 131, 3,

Rue de Varembe, 1121 Geneva 20, Switzerland. Some of the IEC

publications are available from the Sales Department, American

National Standards Institute, 11 W. 42nd Street, New York, NY

10036.

Draft British Standard EN 50 082-2

—

Electromagnetic Compatibility — Generic Immunity

Standard: Industrial (CLC/TC 110 (Sec) 44)

2.4 Emerald Book

— IEEE Reco mmended Practice

for Powering and Grounding Sensitive Electronic

Equipment, IEEE, 1992

2.5 EOS/ESD Association Advisory for Electrostatic

Discharge Terminology

— Glossary, 1992

2.6 FIPS (Federal Information Processing Standards)

Publication 94, 21 September 1983

— Guideline on

Electrical Power for ADP Installations

2.7 IEC 801-2, Second Edition, 1991-04

—

Electrostatic Discharge Requirements

2.8 IEC 801-3, First Edition, 1984

— Radiated

Electromagnetic Field Requirements

2.9 IEC 801-4, First Edition, 1988

— Electrical Fast

Transient/Burst Requirements

2.10 IEC TC 65 (Sec.) 137 (801-5) Committee Draft,

July 1992

— Surge Immunity Requirements

2.11 IEC TC 65 (Sec.) 144 (801-6) Committee Draft,

February 1992

— Immunity to Conducted

Disturbances Induced by Radio Frequency Fields above

9 kHz.

3 Terminology

3.1 earth port — European term fo r an equipment

ground. This term is used extensively in the basic

standards.

3.2 electromagnetic compatibility (EMC) — The

ability of electronic equipment to function properly

with respect to environmental EMI and ESD.

3.3 electromagnetic interference (EMI) — Any

electrical signal in the non-ionizing (sub-optical)

portion of the electromagnetic spectrum with the

potential to cause an undesired response in electronic

equipment.

3 Sales Administration (Drafts), BSI, Linford Wood, Milton Keynes

MK 14 6LE, United Kingdom.

4 EOS/ESD Association, Inc., 200 Liberty Plaza, Rome, NY 13440.

5 National Technical Information Service, U.S. Department of

Commerce, Springfield, VA 22161.

SEMI E33-94 © SEMI 1994 2

3.4 electrostatic discharge (ESD) — The transfer of

electrostatic charge between bodies at different

electrostatic potentials.

3.5 ELF — Extremely low frequen cy (about 1 Hz to 1

kHz) magnetic fields generated by current flow (most

commonly 60 Hz in the U.S. and 50 Hz in Europe)

within equipment and facilities.

3.6 ELF sensitive equipment — Any equipment whose

performance is adversely affected by ELF, such as a

scanning electron microscope (SEM).

3.7 EUT — Equipment under test.

3.8 port — (For purposes of this specification), a

particular interface of the specified equipment with the

external electromagnetic environment, (see Figure 1).

3.9 enclosure port — (For purpose s of this

specification), the physical boundary of the apparatus

through which electromagnetic fields may radiate or

impinge.

Figure 1

4 Requirements

4.1 Performance Criteria — The following are

generic failure criteria for the various classes of

equipment and electronic systems used in

semiconductor manufacturing. However, any kind of

failure or aberration during EMC testing shall be noted

in the test report.

4.1.1 Performance Criteria A — The equipment

operates as intended during and after the test. In the

case of process equipment, all process results are within

specifications. No safety hazards nor false alarms are

present. In some cases, the performance level may be

replaced by a documented permissible loss of

performance if such loss is minor and agreeable to the

concerned parties.

4.1.2 Performance Criteria B — The equipment

operates as intended after the test, but experiences a

loss of function or degradation of performance during

the test to a level specified by the manufacturer. No

change of operating state or loss of stored data is

allowed. Restoration of performance or function does

not require human intervention.

4.1.3 Performance Criteria C — Te mporary loss of

function is allowed, provided the loss of function is

recoverable, either automatically or through operation

of the controls. Any failure of control or alarm systems

is in a fail-safe mode, such as a false alarm or

equipment shutdown.

4.1.4 Safety Criteria — Equipment will automatically

fail if testing results in an unsafe or potentially unsafe

condition, such as threat to life or property. Examples

would be failure of an emergency machine off (EMO)

button to operate or faulty opening of a toxic gas valve.

4.1.5 Conditions during Testing — All EMC testing is

to be done with the equipment installed and operational.

As much as possible, the test installation should be

identical to the final production installation. Substitutes

may be used for hazardous gases and chemicals, and

other modifications may be made as deemed reasonable

to ensure testing can be performed in a completely safe

and environmentally acceptable manner. Special EMC

facilities are not required by this standard.

5 Test Methods

The tables below are organized by ports to which the

tests apply, as defined above. The basic standards

provide the test setup and procedures to be followed,

except as noted. In all events, EMC testing is intended

to prevent EMC problems when the equipment is

installed and operating in a semiconductor

manufacturing facility. Any modification or

interpretation of the test setup and procedure should be

judged by this overriding goal.

5.1 Immunity Tests

Table 1 Enclosure Ports

Test Type Specification Basic Standard Remarks

Performance

Criteria

1.1 ESD immunity 4 kV Contact

8 kV Air discharge

IEC 801-2 (1991) See Appendices A and B A

1.2 Radiated immunity

Amplitude modulated

10 V/m

450-520 MHz

800-950 mHz

80% AM (1 kHz)

IEC 801-3 See facilities requirements

(See Section 5.1.1)

1.3 ELF immunity Level A - E as required ELF testing

(See Section 5.1.2)

Required only of ELF-

sensitive equipment

1.4 Radiated immunity

Pulse modulated

3 V/m

1.89 GHz

50% Duty cycle

100 Hz rep freq.

TC 65 (Sec.) 136

Draft

Europe only

Cellular phone band

5.1.1 Facilities Requirements — Due to the size and complexity of much semiconductor factory equipment, testing

in a shielded enclosure, anechoic chamber, or other special facility is not required. If such facilities can be used, the

results will be more reproducible and accurate.

Note that radiated immunity testing is required only at frequencies used for mobile communications. As shown in Table 1, Row

1.2. Testing should be conducted in conformance with national and local emission requirements at the frequencies specified (see

Appendix D).

5.1.2 ELF Testing — The following sensitivity levels are defined:

Level A — ELF of less than 0.25 milliGauss rms

Level B — ELF of less than 0.50 milliGauss rms

Level C — ELF of less than 1.00 milliGauss rms

Level D — ELF of less than 2.00 milliGauss rms

Level E — ELF of 2.00 milliGauss rms and greater

ELF sensitivity is to be determined by applying ELF through a coil or set of coils designed to produce a uniform

magnetic field at or near the power-line frequency at the position of maximum ELF sensitivity of the EUT. The

direction of the applied field shall be set to produce the maximum disturbance to the EUT. The field level shall be

determined using a calibrated ELF meter.

If allowable performance degradation is permitted at the higher ELF levels, the performance shall be specified at

each level.

Table 2 Ports for Signal Lines and Short Distance (< 30 m) Data Buses Not Involved in Process Control

Test Type Specification Basic Standard Remarks

Performance

Criteria

2.1 Fast transients

common mode

1 kV (peak)

5/50 Tr/Th ns

5 kHz rep. frequency

IEC 801-4

Capacitive clamp

Applicable to cables

whose length can exceed 3

2.2 Radio Frequency

common mode 1 kHz

80% AM

0.15-100 MHz

3 V (rms) (unmod)

150 Ω source impedance

IEC TC 65 (Sec.)

144

Applicable to cables

whose length can exceed 1