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SEMI G37-88 © SEMI 198 6, 1988 4 Figure 4 Package Warpage Warp in m i ls/Length in Inches = Warp Factor Figure 5 Shoulder Bend Location Figure 6 Lead Co-plan arity NOTICE: T hese st andards do not purport to address s af…

SEMI G37-88 © SEMI 1986, 19883

Figure 1

Cavity to Frame Offset

Figure 2

Cavity Mismatch

Figure 3

Parting Line Protrusions

SEMI G37-88 © SEMI 1986, 1988 4

Figure 4

Package Warpage Warp in mils/Length in Inches = Warp Factor

Figure 5

Shoulder Bend Location

Figure 6

Lead Co-planarity

NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish appropriate safety and health practices and determine the

applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability

of the standards set forth herein for any particular application. The determination of the suitability of the standard is

solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are

subject to change without notice.

The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted

material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights and

the risk of infringement of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

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consent of SEMI.

SEMI G38-0996 © SEMI 1987, 2004 1

SEMI G38-0996 (Reapproved 1104)

TEST METHOD FOR STILL- AND FORCED-AIR JUNCTION-TO-

AMBIENT THERMAL RESISTANCE MEASUREMENTS OF

INTEGRATED CIRCUIT PACKAGES

This test method was technically reapproved by the Global Assembly and Packaging Committee and is the

direct responsibility of the Japanese Packaging Committee. Current edition approved by the Japanese

Regional Standards Committee on July 23, 2004. Initially available at www.semi.org September 2004; to be

published November. Originally published in 1987; previously published September 1996.

1 Purpose

1.1 The purpose of this test is to determine the thermal

resistance of integrated circuit packages using thermal

test chips.

2 Scope

2.1 This test method deals only with junction-to-

ambient measurements of thermal resistance and limits

itself to still- and forced-air convection testing

environments.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Referenced Standards

3.1 SEMI Standards

SEMI G32 — Guideline for Unencapsulated Thermal

Test Chip

SEMI G42 — Specification for Thermal Test Board

Standardization for Measuring Junction-to-Ambient

Thermal Resistance of Semiconductor Packages

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

4 Terminology

4.1 Definitions

4.1.1 The following definitions and symbols shall

apply for the purpose of this test:

4.1.2 ambient temperature (T

, in degrees Celsius) —

the ambient temperature is the temperature of the air at

a specified location in the vicinity of the

microelectronic device under test (DUT).

4.1.3 junction temperature (T

, in degrees Celsius) —

the term is used to denote the temperature of the

semiconductor junction in the microcircuit in which the

major part of the heat is generated. For purposes of this

test, the measured junction temperature is only

indicative of the temperature in the immediate vicinity

of the element used to sense the temperature.

4.1.4 power dissipation (P

, in watts) — the heating

power applied to the device causing a junction-to-

reference point temperature difference.

4.1.5 temperature-sensitive parameter (TSP) — the

temperature-dependent electrical characteristic of the

junction under test which can be calibrated with respect

to temperature and subsequently used to detect the

junction temperature of interest.

4.1.6 thermal resistance — junction to specified

reference point, R

θJR

degrees Celsius/watt. The thermal

resistance of the microcircuit is the temperature

difference from the junction to some reference point in

the ambient divided by the power dissipation P

4.1.7 velocity (v

, in linear feet per minute (LFPM)) —

the velocity of the air at a specified location upstream

of the DUT.

5 Apparatus

5.1 The apparatus required for these tests shall include

the following as applicable to the specified test

procedures.

5.1.1 Thermocouple Material — Shall be copper

constantan (type T) or equivalent, for the temperature

range −100 to + 300°C. The wire size shall be no larger

than AWG size 30. The junction of the thermocouple

shall be welded to form a bead rather than soldered or

twisted. The accuracy of the thermocouple and

associated measuring system shall be ± 0.5°C.

5.1.2 Suitable Electrical Equipment — As required to

provide controlled levels of conditioning power and to

make the specified measurements. The instrument used

to electrically measure the temperature-sensitive

parameter shall be capable of resolving a voltage

change of 0.5 mV.

5.1.3 Controlled Temperature Chamber, Fluid Bath, or

Wind Tunnel — Capable of maintaining the specific

reference point temperature to within ± 0.5°C of the

reset (measured) value. Typical still-air enclosure and