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SEMI M16-1103 © SEMI 1989, 2003 4 RELATED INFORMATION 1 RELATIONSHIPS BETW EEN THE RE QUIREMENTS OF SEMI M16 AND THE REQUIREMENTS OF JEITA EM-3601 NOTICE: This related i nformation is not an official part of SEMI M1 6. I…

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SEMI M16-1103 © SEMI 1989, 2003 3
SEMI MF1389 — Test Methods for Photoluminescence
Analysis of Single Crystal Silicon for III-V Impurities
SEMI MF1391 — Test Method for Substitutional
Carbon Content of Silicon by Infrared Absorption
SEMI MF1630 — Test Method for Low Temperature
FT-IR Analysis of Single Crystal Silicon for III-V
Impurities
SEMI MF1725 — Guide for Analysis of
Crystallographic Perfection of Silicon Ingots
Table 1 Requirements for Polysilicon
Property Nugget Form
(previously SEMI M16.1)
Granular Form Rod Form
Shape Irregular chunks, crushed from
polysilicon rods, with
maximum linear dimension of
150 mm.
As supplied;
Polysilicon granules are nearly
spherical in shape and range in
size from 200 to 2500 µm with
a mean size of about 900 µm.
Approximately cylindrical
polycrystalline rods, with
length equal to or greater than
the diameter of the rod.
Size Distribution As specified by customer. Not applicable. Not applicable.
Purity
Acceptor concentration, max in
parts per billion, atomic (ppba)
As specified by customer. As specified by customer. As specified by customer.
Donor concentration, max in
parts per billion, atomic (ppba)
As specified by customer. As specified by customer. As specified by customer.
Carbon concentration, max in
parts per million, atomic (ppma)
As specified by customer. As specified by customer. As specified by customer.
Evaluate in accordance with SEMI MF1723 SEMI MF1708 SEMI MF1723
Surface Texture Visual limit standards as
agreed upon between supplier
and purchaser.
Not applicable. Not applicable.
Surface Condition Identified as to whether or not
the nuggets have been etched.
As agreed upon between
supplier and purchaser.
Identified as to whether or not
the rods have been etched.
Surface Metal Contamination, if
specified
Sodium, Aluminum, Iron, Chromium, Copper, Nickel, Potassium, and Zinc, as specified, from
thin surface layer on the sample, determined in parts per billion by weight (ppbw) in
accordance with SEMI MF1724.
Appearance Clean with no stains,
discoloration, or visible
contamination.
As agreed upon between
supplier and purchaser.
Clean with no stains,
discoloration, or visible
contamination.
SEMI M16-1103 © SEMI 1989, 2003 4
RELATED INFORMATION 1
RELATIONSHIPS BETWEEN THE REQUIREMENTS OF SEMI M16 AND
THE REQUIREMENTS OF JEITA EM-3601
NOTICE: This related information is not an official part of SEMI M16. It was developed during the
revision of the document in May 2003. This related information was approved for publication by full letter
ballot on September 19, 2003.
R1-1 Introduction
R1-1.1 SEMI M16 and JEITA EM-3601 both provide
specification requirements for polycrystalline silicon
(poly) in nugget (chunk), granular, and rod forms.
R1-1.2 This related information section provides
comparisons between the two specifications with regard
both to the specification requirements and to the test
methods cited.
R1-2 Specification Requirements
R1-2.1 The philosophies of the two specifications are
quite different in that JEITA EM-3601 spells out
specific purity requirements, while SEMI M16 leaves
these to be “as specified by the customer.” The levels
specified in JEITA EM-3601 may serve as a starting
point for developing the necessary specifications.
R1-2.2 Purity Requirements
R1-2.2.1 JEITA EM-3601 lists the following bulk
purity requirements for the nugget and rod forms:
R1-2.2.1.1 Acceptor concentration, maximum:
• B 0.05 ppba
• Al 0.05 ppba
R1-2.2.1.2 Donor concentration, maximum:
• P 0.3 ppba
• As 0.05 ppba
R1-2.2.1.3 Carbon concentration, maximum:
• C 0.3 ppma
R1-2.2.2 JEITA EM-3601 lists the following bulk
purity requirements for the granular form:
• Total acceptors (B+ Al) 0.1 ppba, maximum
• Total donors (P+ As) 0.4 ppba, maximum
• Carbon 0.3 ppma, maximum
R1-2.2.3 JEITA EM-3601 lists the following surface
metal contamination requirements for the nugget and
granular forms (maximum surface metal contamination
levels are not listed for the rod form):
• Fe, Cr, Ni, and Na 3.0 ppbw, maximum
• Zn 1.0 ppbw, maximum
NOTE 2: These surface metal concentrations correspond to
1.5 ppba for Fe, Cr, and Ni; 3.8 ppma for Na; and 0.5 ppba for
Zn.
R1-2.3 Size Distribution — See Tables R1-1 through
R1-3.
Table R1-1 Size Requirements for Nugget Form
Poly
JEITA EM-3601 SEMI M16
Maximum Dimension 120 mm 150 mm
Minimum Dimension 10 mm not specified
Table R1-2 Size Requirements for Granular Form
Poly
JEITA EM-3601 SEMI M16
Maximum Size
3,500 µm 2,500 µm
Minimum Size
150 µm 200 µm
Mean Size not specified
~ 900 µm
Table R1-3 Size Requirements for Rod Form Poly
JEITA EM-3601 SEMI M16
Minimum Length not specified rod diameter
R1-3 Test Method Requirements
R1-3.1 Sample Preparation
R1-3.1.1 JEITA EM-3601 contains instructions for
preparing samples for photoluminescence, infrared
absorption, and atomic absorption spectroscopy
measurements. It cites the 1996 edition of JIS H 0615
for the preparation of samples from nugget and rod
forms for photoluminescence measurements.
SEMI M16-1103 © SEMI 1989, 2003 5
R1-3.1.2 SEMI M16 specifies that samples for
photoluminescence and infrared measurements are to be
prepared from nugget and rod forms in accordance with
SEMI MF1723 and from granular form in accordance
with SEMI MF1708. Samples for atomic absorption
spectroscopy measurements are to be prepared in
accordance with SEMI MF1724.
R1-3.1.3 The preparation procedures are generally
similar, except that JIS H 0615 allows coring only
perpendicular to the rod filament, but SEMI MF1723
permits coring parallel with the rod filament in addition
to perpendicular to the rod filament.
R1-3.2 Measurement Procedures
R1-3.2.1 The photoluminescence technique is specified
for measurement of donor and acceptor concentrations
in both JEITA EM-3601 and in SEMI M16 (through
reference to SEMI MF1723); the latter also allows this
determination by low temperature FT-IR analysis. The
photoluminescence technique is covered in SEMI
MF1389 and in JIS H 0615. The latter, specified in
JEITA EM-3601, allows only the high excitation
condition for the photoluminescence analysis while the
former allows either high or low excitation.
R1-3.2.2 The infrared absorption method is specified
for the carbon determination in both SEMI M16 and
JEITA EM-3601. The two cited test methods, SEMI
MF1391, specified in SEMI M16 (through reference to
SEMI MF1723), and JEITA EM-3503, cited in JEITA
EM-3601, are essentially equivalent.
R1-3.2.3 Atomic absorption spectroscopy is specified
for the surface metal contamination in both SEMI M16
and JEITA EM-3601. The two cited test methods,
SEMI MF1724, specified in SEMI M16, and JIS K
0121, cited in JEITA EM-3601, are essentially
equivalent insofar as the actual measurement is
concerned, but SEMI MF1724 also standardizes the
sampling procedures, etching solutions, and method of
collecting the impurities in much greater detail.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
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