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SEMI G75.11-06 98 © SEMI 1998 1 SEMI G75.11-0698 TEST METHOD FOR MEA S UREMENT OF THE DIELECTRIC CONSTANT AND DISSIP A TI ON FACTOR OF THE LEADFRA M E TAPE 1 Purpose 1.1 C apacitance is mea sured f or ta p e specimens an…

SEMI G75.10-0698 © SEMI 1998 2
Figure 2B
Surface Resistivity Electrode Connection
6.3 Apply the specified voltage for one (1) minute and
then read the resistance on the galvanometer.
6.4 Repeat the measurements for all the specimens.
6.5 Measure the thickness of the specimens using the
micrometer.
6.6 Calculations
6.6.1 Volume resistivity should be calculated from the
following equation:
σ
v=
π
d
e
2
×
R
v
/
4
t
where :
σ
v
:
volume resistivity
Ω
cm
d
e
:
effective diameter (41
+
42)/2 cm
R
v
:
measured resistance cross tape
thickness
Ω
v/t
t
:
tape thickness cm
d
1
:
inside diameter of the guard
electrode cm
d
2
:
outside diameter of the main
electrode cm
6.6.2 Surface resistivity should be determined from
the following equation:
σ
s=
π
(
d
1
+
d
2
)
×
R
s
/(
d
1
−
d
2
)
where :
σ
s:
surface resistivity
Ω
d
1
:
inside diameter of the guard
electrode cm
d
2
:
outside diameter of the main
electrode cm
R
s
:
measured resistance along the
adhesive surface side of tape
thickness
Ω
7 Related Documents
7.1 ASTM Specification
1
ASTM D 257 — Standard Test Methods for D-C
Resistance or Conductance of Insulating Materials
7.2 JIS Specification
2
JIS K 6911 — Testing Methods for Thermosetting of
Plastics
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
SEMI makes no warranties or representations as to the
suitability of the standards set forth herein for any
particular application. The determination of the
suitability of the standard is solely the responsibility of
the user. Users are cautioned to refer to manufacturer’s
instructions, product labels, product data sheets, and
other relevant literature respecting any materials
mentioned herein. These standards are subject to
change without notice.
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compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
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item mentioned in this standard. Users of this standard
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1 American Society of Testing and Materials, 100 Barr Harbor Drive,
West Conshohoken, PA 19428-2959 (all cited standards may be
found in Volume 10.05 of the Annual Book of ASTM Standards)
2 Japanese Standards Association, 1-24, Akasaka 4 Chome, Minato-
ku, Tokyo, Japan
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
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SEMI G75.11-0698 © SEMI 19981
SEMI G75.11-0698
TEST METHOD FOR MEASUREMENT OF THE DIELECTRIC
CONSTANT AND DISSIPATION FACTOR OF THE LEADFRAME TAPE
1 Purpose
1.1 Capacitance is measured for tape specimens and
air with similar electrode setups. Dielectric constant and
dissipation factor of the tapes are calculated from the
results.
2 Referenced Documents
NOTE: As listed or revised, all documents cited shall be the
latest publications of adopted standards.
2.1 JIS Specification
1
JIS K 6911 — Testing Methods for Thermosetting
Plastics
3 Equipment
3.1 Measurement Circuit — See JIS K 6911 5.14.2 (1)
(b)-(d) and Figure 1.
Figure 1
Mutual Inductance Bridge Method
Following is the Mutual Inductance Bridge Method
(Transformer Bridge Method):
G:
S:
T:
C
s
:
g:
m, d:
C
x
:
Galvanometer
Power source
Shielded transformer
Variable condenser
Constant conductance
Variable resistance
Capacitance of sample
3.2 Electrostatically and electromagnetically shielded
box
3.3 Micrometer with an accuracy of 0.001 mm
1 Japanese Standards Association, 1-24, Akasaka 4 Chome, Minato-
ku, Tokyo, Japan
3.4 Humidity-controlled storage box
4 Sampling
4.1 The sampling is one sample per one lot. The
vendor must report the definition of lot if the customer
requires it.
5 Preparation of Specimens
5.1 The specimen shall be punched out from tape, the
diameter of which must be no less than that of the
opposite electrode.
5.2 Place the specimens in the constant humidity
cabinet at 23 ± 2°C and 50 ± 5% RH for 90 ± 2 hours.
This may also be done after the electrodes are formed.
6 Procedure
6.1 Measure the thickness of specimen with the
micrometer. Attach the electrodes to the specimen.
Electrodes are formed by conductive epoxy printing or
aluminum evaporation shown in Figures 2 and 3.
NOTE 1: The electrodes shall be formed on both sides of
tape.
NOTE 2: Suggested dimensions for the electrodes are shown
in Table 1 (d
1
– d
2
). They should be at least 10 times the tape
thickness.
Table 1 Suggested Dimension of Electrodes
Suggested Dimension (for Tape Thickness
of 0.063–0.077 mm)
Value
d
1
18 mm
d
2
20 mm
d
3
30 mm
6.2 Connect the specimen in the position of C
x
as
shown in Figure 1, and balance the bridge by adjusting
the measuring condenser C
s
and conductance shifter. In
this state, measure the C
s
value, the conductance value
between “m” and “d”, resistance between “I” and “m”,
and “r” and “m” of the conductance shifter in Figure 1.

SEMI G75.11-0698 © SEMI 1998 2
Figure 2
Electrodes Formed on the Leadframe Tape
Figure 3
Electrode Connection