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3 SEMI G68-0996 © SEMI 1996, 2004 Figure 1 Dependence of R jt on Power Di ssipation NOTICE: SEMI makes no warranties or representations as to the suitability o f the standard set forth herei n for any pa rticular appli…
SEMI G68-0996 © SEMI 1996, 2004 2
7 Interference
7.1 It is recommended that an operator who is familiar
with the measuring system and test method conduct the
actual measurement in order to obtain the best result.
7.2 The procedure for attaching the thermocouple
described in Section 12.3 on the test package should be
followed in order to obtain the accurate measurement
result.
8 Apparatus
8.1 Thermocouple
8.1.1 Material — Copper-constantan or equivalent.
8.1.2 Temperature Range — -100 to +300°C.
8.1.3 Wire Size — No larger than AWG size 36.
8.1.4 The Junction — Shall be welded to form a bead
rather than soldered or twisted.
8.1.5 Accuracy — ± 0.5%.
8.2 Suitable Electrical Equipment — As required to
provide controlled levels of conditioning power and to
make the specified measurements.
8.2.1 Resolution — 50 µV and 5 µA.
8.3 Wind Tunnel (as necessary) — See SEMI G38 or
equivalent.
9 Materials
9.1 Test Chip — Referred to in SEMI G32, or
equivalent.
9.2 Test Board — Referred to in SEMI G42, or
equivalent.
9.3 Adhesive — Alpha Cyano-Acrylate.
Aluminum Foil — 4 mm × 4 mm.
10 Setup
10.1 Warm up the test equipment before
measurements.
11 Calibration
11.1
Calibrate the equipment in accordance with the
operation manual as necessary.
12 Procedure
12.1 Preparation of Test Package
12.1.1 Prepare the semiconductor package in which the
test chip is mounted.
12.2 Assemble the package on the test board using
solder.
12.3 Attach the Thermocouple
12.3.1 Apply adhesive on the center point of the
package.
12.3.2 Place the thermocouple and aluminum foil on
the adhesive and press the aluminum foil using a finger
in order to attach the thermocouple on the package
surface as close as possible.
12.4 Measure the thermal characteristic of the diode of
the test chip.
NOTE 2: It is recommended that the ambient temperature T
a
is measured using the thermocouple.
12.5 Mount the test board in a test socket in a still-air
enclosure or wind tunnel as necessary.
12.6 Heating Chip
12.6.1 Supply power to the chip.
12.6.2 Adjust the measurement equipment to the
measured case temperature T
t
or the measured power
P
H
(package)
.
NOTE 3: The thermal resistance usually depends on the
power dissipation (see Figure 1). The thermal resistance is
variable within a power and stable beyond the power.
12.7 Wait until the thermal characteristic of the diode
is stable.
12.8 Calculate the junction temperature T
j
by the diode
thermal characteristics.
12.9 Measure the case temperature T
t
using the
thermocouple and record the case temperature.
12.10 Record the voltage and the current in order to
obtain the P
H
(package)
.
13 Calculation
13.1 The thermal resistance of the package can be
calculated as follows:
jt
(°C/watt) =
(T
j
— T
t
) / P
H
(package)
14 Report
14.1 The following details shall be reported:
a. Description of package.
b. Description of test board.
c. Power dissipation of test chip.
d. Thermal resistance R
jt
for test condition.
3 SEMI G68-0996 © SEMI 1996, 2004
Figure 1
Dependence of R
jt
on Power Dissipation
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standard set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials or equipment mentioned
herein. These standards are subject to change without
notice.
By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights
asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised
that determination of any such patent rights or
copyrights, and the risk of infringement of such rights,
are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of
the contents in whole or in part is forbidden without express written
consent of SEMI.
1 SEMI G69-0996 © SEMI 1996, 2004
SEMI G69-0996 (Reapproved 1104)
TEST METHOD FOR MEASUREMENT OF ADHESIVE STRENGTH
BETWEEN LEADFRAMES AND MOLDING COMPOUNDS
This test method was technically approved by the Global Assembly & Packaging Committee and is the direct
responsibility of the Japanese Packaging Committee. Current edition approved by the Japanese Regional
Standards Committee on July 23, 2004. Initially available at www.semi.org September 2004; to be published
November 2004. Originally published in 1996.
1 Purpose
1.1 This document describes procedures for measuring
adhesive strength between leadframes and molding
compounds for semiconductor packages.
1.2 The procedures include shear test, pull test, and
three-point bending techniques.
2 Scope
2.1 This document may be used on all types of
semiconductor leadframe and molding compound.
2.2 The methods help leadframe manufacturers,
molding compound manufacturers and their customers
in evaluating leadframes, and molding compounds as a
guideline.
2.3 The methods in this document use SI units.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Terminology
3.1 None.
4 Summary of Method
4.1 Shear Method — A frustum-shaped button of
molding compound on the surface of a leadframe
sample is sheared off the leadframe surface using a
tensile tester (see Figure 1).
4.2 Pull Method — A sample of leadframe material
molded into the side of a block of a molding compound
is pulled out using a tensile tester (see Figure 2).
4.3 Three-Point Bending Method
1
— Molding
compound is molded onto the surface of a leadframe
sample such that part of the leadframe is free of
1 A. Nishimura, I. Hirose and N. Tanaka, “A New Method for
Measuring Adhesion Strength of IC Molding Compounds”, ASME
Journal of Electronic Packaging, Vol. 114, pp 407-412, 1992
molding compound adherence to the surface. Using a
bending technique, the adherent molding compound is
cracked away from the surface. This process is repeated
from both sides of the sample in order to calculate the
true adhesive strength (see Figure 3).
5 Equipment
5.1 Tensile Tester
5.1.1 Measurement Range — Maximum 980 N (100
kgf)
5.1.2 Accuracy — ± 1%
5.1.3 Crosshead Speed — 2–10 mm/min
(recommended), constant speed.
5.1.4 Fixtures suitable for holding the samples,
shearing the molding compound, pulling the leadframe,
and applying bending load.
5.2 Chart Recorder
5.3 Transfer molding machine or suitable replacement
that can encapsulate individual samples with required
pressure and temperature.
5.4 Pre-Heater — High frequency heater for molding
compounds.
5.5 Molds — Suitable to mold the samples as shown in
Figures 1, 2, and 3.
5.6 Recirculating Air Oven — With controller in range
of 170–180°C.
5.7 Equipment to pre-treat the leadframe sample, as
required.
5.8 Ultrasonic inspection apparatus for three-point
bending method.
6 Configuration and Dimension of Sample
6.1 The sample configuration and dimensions for
measurement are shown in Figures 1, 2, and 3.