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SEMI M24-1103 © SEMI 1994, 2003 6 polished wafer front surface instead of reference gloss surface as describe d in these feat method. 11 Surface Defect Criteria 11.1 Front surface defect cr iteria are shown in Item 8 in …

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SEMI M24-1103 © SEMI 1994, 2003 5
along the diameter perpendicular to the <100>
orientation fiducial axis (0° in the coordinate system
specified in SEMI M20), the diameter 120° counter-
clockwise, and the diameter 240° counterclockwise.
However, a more precise method of determining the
diameter is to find the circle that best fits the circum-
ference of the wafer by a least squares method; the
diameter of the wafer is twice the radius of this circle.
10.11 Flat Orientation — Determine in accordance
with ASTM Test Method F 847.
10.12 Flat Length — Determine in accordance with
ASTM Test Method F 671.
10.12.1 If flat diameter is specified instead of flat
length, determine in accordance with Section 5.2.1 of
DIN 50441/4 or by a dial gauge method (see NOTE 8)
as agreed upon between supplier and purchaser.
10.13 Notch Dimension — Determine the depth and
angle of the fiducial notch in accordance with ASTM
Test Method F 1152 with the use of a wafer holding
fixture appropriate for silicon wafers.
10.14 Notch Orientation — No test method for
verifying the crystal axis of the orientation fiducial axis
of notched wafers has yet been standardized.
Accordingly, test procedures for making this
determination shall be agreed upon between supplier
and purchaser. A starting point may be an extension of
ASTM Test Method F 847 with fixturing appropriate to
notched wafers.
10.15 Edge Profile Shape — Determine the suitability
of the edge profile in accordance with ASTM Test
Method F 928 or DIN 50441/2.
10.16 Edge Surface Finish — Establish the surface
finish of the edge region of the wafer by a method
agreed upon between supplier and purchaser.
10.17 Thickness, Center Point — Determine thickness,
center point may in accordance with ASTM Test
Method F 533, JIS H 0611, or DIN 50441/1; special
jigs or fixtures may be needed to allow the probe to
reach the center point of the wafer.
10.18 Total Thickness Variation — Determine in
accordance with ASTM Test Method F 533, ASTM
Test Method F 657, DIN 50441/1, and JIS H 0611.
NOTE 2: ASTM Test Method F 533, DIN 50441/1, and JIS
H 0611 are all 5-point methods, while Test Method F 657
involves a continuous scan pattern. JIS H 0611 differs from
ASTM Test Method F 533 and DIN 50441/1 in that the
measurements in JIS H 0611 are taken at the center and at 5
mm from the edge on diameters parallel and perpendicular to
the major flat, while the measurements in the latter two test
methods are taken at the center and at the same radial distance
(R nominal - 6 mm) on diameters 30 degrees and 120 degrees
counterclockwise from the bisector to the primary flat or
notch (with the wafer facing front surface up).
10.19 Surface Orientation — Determine the crystal-
lographic orientation of the wafer surface in accordance
with ASTM test methods F 26, JEIDA Method 18, or
DIN 50433 using a suitable fixture to hold wafer.
10.20 Bow and Warp — Determine bow in accordance
with ASTM Test Method F 534 and warp in accordance
with ASTM Test Method F 1390 or Test Method F 657.
NOTE 3: ASTM has standardized two methods for
measuring warp. ASTM Test Method F 1390 is an automated,
non-contact method which provides for correction of the
wafer deflection due to gravitational effects. The scan pattern
covers the entire fixed quality area. ASTM Test Method F
657 is a manual, non-contact method which has a continuous,
prescribed scan pattern which covers only a portion of the
wafer surface. There is no provision for correction of the
wafer deflection due to gravitational effects. As noted in
Appendix 2, different reference planes are used for the two
methods. Because Test Method F 657 employs a back surface
reference plane, the measured warp may include contributions
from thickness variation of the wafer. Test Method F 1390
employs a median surface reference plane and is not
susceptible to interferences from thickness variations. In
general, Test Method F 1390 is preferred, especially for
wafers 150 mm in diameter and larger, although ASTM Test
Method F 1530 may also be used for this determination.
10.21 Sori — If sori is specified in lieu of bow or warp
or both, determine by a method agreed upon between
the supplier and the purchaser.
NOTE 4: Because sori is a property of the top surface of an
unclamped wafer, it may be measured on many types of
flatness measuring instruments. ASTM Test Method F 1451
may, in principle, be used for determination of sori.
10.22 Flatness — Determine by a method agreed upon
between the supplier and the purchaser. It is
recommended that site flatness is determined in
accordance with ASTM Test Method F 1530 using a
site-by-site front surface reference (indicated by the
acronym SFQR in the Flatness Decision tree (see SEMI
M1, Figure A1-1)). The percent usable area (PUA) shall
be calculated as the percentage of the total number of
full sites within the FQA that meet the specification.
10.23 Surface Metal Contamination — Determine
surface metal contamination by a method agreed upon
between supplier and purchaser; ASTM Test Method F
1617 is suitable for sodium and aluminum, and ASTM
Test Method F 1526 is suitable for chromium, iron,
nickel, copper, and zinc at the specified levels. Other,
more sensitive methods may also be utilized by
agreement between supplier and purchaser.
10.24 Back Surface Gloss — Determine test method in
accordance with ASTM D523 or JIS Z8741 using a 60
degree of incidence and referencing the zero to a mirror
SEMI M24-1103 © SEMI 1994, 2003 6
polished wafer front surface instead of reference gloss
surface as described in these feat method.
11 Surface Defect Criteria
11.1 Front surface defect criteria are shown in Item 8
in attached specification tables.
11.2 Minimal Conditions or Dimensions — The
minimal conditions or dimenions for defects stated
below shall be used for determining wafer acceptability.
Anomalies smaller than these limits shall not be
considered defects.
11.2.1 area contamination — Any foreign matter on
the surface in localized areas which is revealed under
the inspection lighting conditions as discolored,
mottled, or cloudy appearance resulting from smudges,
stains, water spots, etc.
11.2.2 crack — Any anomaly conforming to the
definition and greater than 0.25 mm (0.010 inch) in
total length.
11.2.3 crow's foot — Any anomaly conforming to the
definition and greater than 0.25 mm (0.010 inch) in
total length.
11.2.4 dimple — Any smooth surface depression
greater than 3 mm in diameter.
11.2.5 edge chip and indent — Any edge anomaly,
including saw exit marks, conforming to the definition
and greater than 0.25 mm (0.010 inch) in radial depth
and peripheral length.
11.2.6 hand scribe mark — Any mark such as that
caused by a diamond scribe that is visible under diffuse
illumination.
11.2.7 haze — Haze is indicated when the image of a
narrow beam tungsten lamp filament is detectable on
the polished wafer surface. (Under some conditions,
contamination may appear as haze.)
11.2.8 orange peel — Any roughened surface
conforming to the definition that is observable under
diffuse illumination.
11.2.9 particulate contamination — Distinct particles,
resting on the surface, which are revealed under
collineated light as bright points.
11.2.10 pit — Any individually distinguishable non-
removable surface anomaly conforming to the
definition and visible when viewed under high intensity
illumination.
11.2.11 saw marks — Any surface irregularities
conforming to the definition that are observable under
diffuse illumination.
11.2.12 scratch — Any anomaly conforming to the
definition and having a length-to-width ratio greater
than 5:1.
11.2.13 slip — Any pattern of short ridges aligned
along <111> directions and visible under diffuse
illumination.
11.2.14 striations — Any helical features conforming
to the definition and visible under diffuse illumination.
11.3 Back surface defect criteria are specified in
attached specification tables.
12 Certification
12.1 Upon request of the purchaser in the contract or
order, a manufacturer’s or supplier’s certification that
the material was manufactured and tested in accordance
with this specification, together with a report of the test
results, shall be furnished at the time of shipment.
12.2 In the interest of controlling inspection costs, the
supplier and the purchaser may agree that the material
shall be certified as “capable of meeting” certain
requirements. In this context, “capable of meeting”
shall signify that the supplier is not required to perform
the appropriate tests in Section 10. However, if the
purchaser performs the test and the material fails to
meet the requirement, the material may be subject to
rejection.
13 Packing and Marking
13.1 Special packing requirements shall be subject to
agreement between the supplier and the purchaser.
Otherwise, all wafers shall be handled, inspected, and
packed in such a manner as to avoid chipping,
scratches, and contamination, and in accordance with
the best industry practices, to provide ample protection
against damage during shipment.
SEMI M24-1103 © SEMI 1994, 2003 7
13.2 The wafers supplied under this specification shall be identified by appropriately labeling the outside of each
box or other container and each subdivision thereof in which it may reasonably be expected that the wafers will be
stored prior to further processing. Iden-tification shall include, as a minimum, wafer classifi-cation, nominal
diameter, surface orientation, growth method, lot number, and origin. In addition, identifi-cation of premium wafers
shall include conductivity type and resistivity range of the lot. The lot number, either (1) assigned by the original
manufacturer of the wafer, or (2) assigned subsequent to wafer manufacture but providing reference to the original
lot number, shall provide easy access to information concerning the fabrication history of the particular wafers in
that lot. Such information shall be retained on file at the vendor's facility for at least one month after that particular
lot has been accepted by the purchaser.
Table 2 Specification for Polished Monocrystaline Silicon Premium Wafers for 250 nm Design Rule Usage
CLASSIFICATION ITEMS
(SEMI M18)
Particle Counting Furnace & Thermal
Process
Lithography &
Patterning
Test Method
(The specification is deleted in SEMI M24, the original table can be referred to in SEMI M24 1999 to 2001
versions.)
Table 3 Specification for Polished Monocrystalline Silicon Premium Wafers for 180 nm Design Rule Usage
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace & Thermal
Process
Lithography &
Patterning
Test Method
1. GENERAL CHARACTERISTICS
1.1 Growth Method Cz or MCz Cz or MCz Cz or MCz
1.2. Crystal Orientation
(100) ± 1° (100) ± 1° (100) ± 1°
ASTM F 26,
DIN 50433
1.3 Conductivity Type n or p n or p n or p ASTM F 42,
JIS H607
DIN 50432
1.4 Dopant P or B P or B P or B ASTM F 1389,
F 1630, DIN
50438/3
1.5 Nominal Edge Exclusion
(Fixed Quality Area) (See Note 1.)
300 mm: 2 mm
200 mm: 3 mm
300 mm: 2 mm
200 mm: 3 mm
300 mm: 2 mm
200 mm: 3 mm
2. ELECTRICAL CHARACTERISTICS
2.1 Resistivity, Center Point NS ≥ 1 Ω-cm
(See Note 4.)
ASTM F 84, F 673,
JIS H 602,
DIN 50431, 50445
2.2 Radial Resistivity Variation NS NS ASTM F 81,
DIN 50435
2.4 Minority Carrier Lifetime
(Carrier Recombination Lifetime)
NS ≥ 325 µs
(See Note 4.)
NS
JEIDA 53, F 1535
3. CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration:
Spec. Range of Center Point: Target
≤ 1.2 × 10
18
/cm
3
ASTM F 1188,
F 1619
DIN 50438/1,
JEIDA 61
3.1.1 Oxygen Concentration:
Tolerance Around Center Point: Target
≤ 10%
3.2 Radial Oxygen Variation NS
3.3 Carbon Concentration
NS
≤ 0.2 ppma
NS
ASTM F 1391,
DIN 50438/2,
JEIDA 56