semi合集-English.pdf - 第5419页

SEMI M58-0704 © SEMI 2004 12 NOTICE: SEMI makes no warranties or representations as to the suitab ility of the standards set forth herein for any particular application. The determination of the su itability of the stand…

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SEMI M58-0704 © SEMI 2004 11
Lab: Company ABC Identification of deposition system used:
1
Contact
N
. P. Teste
r
Supplier/Model # Dep Sys/45U
2
Address
456 Main Street System S/N 12345
3
Anywhere, CA, USA System S/W Revision 3
4
Phone
782-555-5555 Date of Test
5
email nptester@abcco.com
Date of Last Previous Test
N
ot applicable
6
7
Characteristics of Suspensions Used for Test
8
u
B
ottle i
%FWHM
i
9
B
ottle A, Certified
100.7 nm ± 0.5
nm (1
σ
) or
0.5% 2.0%
10
79 nm ± 2.6
nm (1
σ
) or
3.3% 10.0%
11
145 nm ± nominal
nm (1
σ
) or
not available unknown
12
Particles Deposited (
N
)
3000
13
S
upplier
P
art No.
L
ot No.
14
Deposition System Diameters (nm)
B
ottle A
N
IST SRM 1963 ? ?
15
B
ottle A
B
ottle B
B
ottle
C
B
ottle A
B
ottle B ? ? ? ? ? ?
16
D
ay
nm nm nm nm
B
ottle
C
? ? ? ? ? ?
17
1
101.5 79.6 155.6 101.0
18
2
100.5 79.0 153.9 101.0
19
3
101.0 78.2 154.6 102.0 SSIS Data: Bottle C
20
4
102.0 78.5 155.9 102.0
21
5
101.0 78.1 154.3 102.0
22
M
ean
101.2 78.7 154.9 101.6
D
ay
nm nm %
23
s
D
ep
0.6% 0.8% 0.6% 0.5%
1
149.2 3.3 2.21% 2815
24
2
148.9 3.6 2.42% 2548
25
Dep System Sizing Corrections
3
150.9 3.4 2.25% 2720
26
M
ean
A
=
101.4 nm
4
151.1 3.6 2.38% 2716
27
s
D
epA
=
0.6%
5
149.7 3.4 2.27% 2178
28
Cert
A
−
Mean
A
=
-0.7 nm
M
ean
150.0 3.5 2.31% 2595
29
Std Dev 0.994 0.134 0.088%
252.4
30
SSIS Data: Bottle A
31
Analysis
32
B
ottle A
B
ottle B
B
ottle
C
33
D
ay
nm nm %
D
ep Peak Uncertainty
1.5% 1.9% 1.5%
34
1
95.6 2.1 2.20% 2178
F
WHM (SSIS)
2.3% 3.3% 2.3%
35
2
95.9 2.2 2.29% 2418
P
eak (Dep System)
101.4 78.7 154.9
36
3
96.1 2.3 2.39% 2555
P
eak (Dep Sys Corrected)
100.7 78.1 153.8
37
4
96.1 2.2 2.29% 2512
P
eak (SSIS)
96 72 150
38
5
96.2 2.2 2.29% 1929
M
easured Count
2318 2524 2595
39
M
ean
96.0 2.2 2.29% 2318
40
Std Dev 0.239 0.071 0.070% 262.1
Compare Quantity with Limit
41
42
SSIS Data: Bottle B
Uncertainty Limit
43
F
WHM Limi
t
44
SSIS Peak
45
D
ay
nm nm %
SSIS Count
46
1
72.6 2.4 3.31% 2297
47
2
71.6 2.3 3.21% 2690 Interpretation of Results
48
3
72.2 2.3 3.19% 2742
B
ottle A
B
ottle B
B
ottle
C
49
4
72.2 2.3 3.19% 2735
Uncertainty
Pass Pass Pass
50
5
71.2 2.5 3.51% 2156 Pass Pass Pass
51
M
ean
72.0 2.4 3.28% 2524
SSIS/Dep Peak Comp
0.95 0.92 0.98
52
Std Dev 0.555 0.089 0.138%
276.8
SSIS/Dep Count Comp
0.77 0.84 0.87
53
A B C D E F G H I J K
August 20, 2003
B
ottle B
B
ottle
C
S
uspension
P
ea
k
Diameter
M
easured
Peak
F
WHM
on Wafer
R
elative
F
WHM
Count
F
WHM
Dep Sys Corrected Peak (Info only)
5.0% (SEMI M52)
3.0% (SEMI M52)
Dep System Count (Info only)
Count
L
imi
t
F
WHM
on Wafer
M
easured
Peak
R
elative
F
WHM
Quantity
Count
R
elative
F
WHM
M
easured Pea
k
F
WHM on
Wafer
Figure R2-1
Example Test Results
SEMI M58-0704 © SEMI 2004 12
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth
herein for any particular application. The determination of the suitability of the standard is solely the
responsibility of the user. Users are cautioned to refer to manufacturer' s instructions, product labels,
product data sheets, and other relevant literature, respecting any materials or equipment mentioned herein.
These standards are subject to change without notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no
position respecting the validity of any patent rights or copyrights asserted in connection with any items
mentioned in this standard. Users of this standard are expressly advised that determination of any such
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Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M59-0305 © SEMI 2005 1
SEMI M59-0305
TERMINOLOGY FOR SILICON TECHNOLOGY
This standard was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved by the North
American Regional Standards Committee on December 10, 2004. Initially available at www.semi.org
February 2005; to be published March 2005.
NOTICE: This document replaces SEMI MF1241.
1 Purpose
1.1 Silicon technology underlies the integrated circuit and device industry. To promote common understanding and
correct communication between suppliers and customers and others in the field, terms used in this field should be
defined.
1.2 This terminology document covers definitions of terms used in relation to semiconductor silicon crystals and
wafers.
2 Scope
2.1 This terminology covers terms describing attributes of silicon wafers as specified in SEMI M1 and other SEMI
standards as outlined in SEMI M1. These attributes include electrical, structural, chemical, and dimensional
characteristics of polished and other types of silicon wafers as well as surface defects and contamination.
2.2 This terminology is applicable for use in connection with research, development, process control, inspection,
and procurement of silicon material.
2.3 Almost all of the terms for which definitions are listed are nouns. Unless the part of speech is given for any
particular term, it can be assumed that the term is a noun.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
3 Referenced Standards
3.1 SEMI Standard
SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
3.2 ISO Standard
1
ISO 4287/1 — Surface Roughness – Terminology – Part 1: Surface and its Parameters
3.3 ANSI Standard
2
ANSI/ASME B46.1 — Surface Texture (Surface Roughness, Waviness, and Lay)
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
4 Abbreviations and Acronyms
4.1 AAS — atomic absorption spectroscopy, a method for analyzing for impurities.
4.2 AFM — atomic force microscope, an instrument for measuring microroughness.
4.3 A/N — alphanumeric.
4.4 ANSI — American National Standards Institute
2
, the American member of ISO.
1 International Organization for Standardization, ISO Central Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20, Switzerland.
Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30 Website:
www.iso.ch
.
2 American National Standards Institute, New York Office: 25 West 43rd Street, New York, NY 10036, USA. Telephone: 212.642.4900; Fax:
212.398.0023 Website:
www.ansi.org
.