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SEMI P34-0200 © SEMI 2000 3 ping position shall be indicated on each carrier. Packag- ing shall comply with the applicable inter national, national, state, and local laws and regulation s required for sh ipping. 15.2 Con…
SEMI P34-0200 © SEMI 2000 2
are taken within the flatness quality area, along both
major axes. Calculation of parallelism is illustrated in
Figure 7.
7 Material Specifications
7.1 Substrate material shall be specified as fused silica
(quartz). Fused silica is considered to be ultra low
thermal expansion (ULTE) class material.
7.2 Substrate materials shall conform to thermal
expansion and optical transmittance tolerances
specified in Table 3.
7.3 Selected physical properties of fused silica are
provided for information only in Appendix 1.
8 Flatness Specifications
8.1 Substrates shall be supplied with two major sides
having a flatness (T.I.R.) of 1, 2, or 5 µm over a
flatness quality area as defined in Figure 4a or Figure
4b. Sides are not required to have equivalent flatness.
NOTE 2: Flatness of 0.5 µm is very desirable for
semiconductor production, and equipment suppliers may want
to consider this in their designs.
9 Visual Criteria
9.1 A visual quality area, which may or may not
correspond with the flatness quality area, shall be
agreed upon between the user and supplier.
9.2 Each substrate shall not have more defects than
listed in Table 4. This table includes limits for the
following types of defects:
9.2.1 Internal defects in the visual quality area,
9.2.2 Critical side surface defects in the visual quality
area,
9.2.3 Non-critical side surface defects in the visual
quality area, and
9.2.4 Defects outside the visual quality area.
9.3 Fused silica substrates shall be identified with one
corner chamfer as shown in Figure 5. Dimensions of the
chamfer shall be as specified in Figure 6. The corner
chamfer is made only on the non-critical side of the
substrate.
NOTE 3: This configuration of corner chamfers is different
than the configuration used for smaller ULTE class material
substrates as defined in SEMI P1.
10 Sampling
10.1 Unless otherwise specified, appropriate sample
sizes shall be selected from each lot in accordance with
ANSI/ASQC Z1.4. Each quality characteristic shall be
assigned an acceptable quality level (AQL) in
accordance with ANSI/ASQC Z1.4 definitions for
critical, major, and minor classifications. If desired, and
so specified in the contract or order, each of these
classifications may alternatively be assigned cumulative
AQL values. Inspection levels shall be agreed upon
between user and supplier.
11 Test Methods
11.1 Thermal Expansion — Determine in accordance
with ASTM E228.
11.2 Transmission (to be agreed upon between user
and supplier).
11.3 Flatness (to be agreed upon between user and
supplier).
11.4 Visual (to be agreed upon between user and
supplier).
11.5 Parallelism (to be agreed upon between user and
supplier; non-contact methods are preferred).
12 Handling
12.1 Substrates are to be handled on the edges only.
When human handling is required, substrates are to be
handled with gloves approved for cleanroom use.
13 Orientation
13.1 For fused silica substrates with a single corner
chamfer (see Section 9.3), it is recommended that all
orientation be performed referencing the corner of the
non-critical side diagonally opposite the corner
chamfer. The corner for orientation signifies two
orientation edges for positioning of the substrate. One
edge shall be used for rotation baseline by two points.
The other edge shall be used for positioning by one
point. See Figure 8 for more information.
14 Certification
14.1 Upon request of the purchaser in the contract or
order, a manufacturer’s or supplier’s certification that
the material was manufactured and tested in accordance
with this specification, together with a report of the test
results, shall be furnished at the time of shipment.
15 Packing and Marking
15.1 Substrates shall be packed in a class 5 environ-
ment as defined by ISO 14644. Carriers shall be
designed to prevent substrate-to-substrate contact, and
to protect the substrates from contamination in handling
and transit. Substrates shall be shipped with the critical
side toward the front or bottom of the shipping carrier,
depending on carrier configuration. The substrate ship-
SEMI P34-0200 © SEMI 20003
ping position shall be indicated on each carrier. Packag-
ing shall comply with the applicable international,
national, state, and local laws and regulations required
for shipping.
15.2 Containers shall be labeled “Warning: Open and
Handle Under Cleanroom Conditions Only” as well as
identified by user purchase order number (if
applicable), drawing number (if applicable), quantity,
supplier lot number, and material identification.
16 Related Documents
16.1 SEMI Standard
SEMI P1 — Specification for Hard Surface Photomask
Substrates
Table 1 Specifications for Edge Length, Squareness, Straightness, and Thickness for Square Substrates
Nominal Edge Length Edge Length
Minimum
Edge Length
Maximum
Squareness Straightness
(T.I.R.)
Thickness
Minimum
Thickness
Maximum
Units
230 mm (virgin) 229.6 230.0 0.186/213 0.050 8.90 9.10 mm
230 mm (repolished) 229.6 230.0 0.186/213 0.050 8.80 9.10 mm
Figure 1
Square Photomask Substrate
K > nominal edge length × 0.7
Figure 2
Measurement Fixture and Calculation to Determine Substrate Squareness
SEMI P34-0200 © SEMI 2000 4
Table 2 Specifications for Chamfered Edge Dimensions
TAABBCC
Nominal Min. Max. Min. Max. Min. Max. Units
9.00 0.20 0.60 0.20 0.60 2.00 3.00 mm
Figure 3
Dimensions for Chamfered Edge and Rounded Corners
Note: “C” is radius of curvature of corners.
Table 3 Substrate Material Characteristics
Fused Silica Coefficient of Expansion (°C
–1
)
between 0°C and 300°C
Minimum Transmittance (%) of 9 mm Thick Substrate at Wavelengths of:
193 nm 248 nm 254 nm 365 nm 405 nm 436 nm
Virgin
< 7.5 × 10
–7
90 90 90 90 90 90
Repolished
< 7.5 × 10
–7
89 90 90 90 90 90