semi合集-English.pdf - 第689页

SEMI E89-1104 E © SEMI 1999, 2004 16 RELATED INFORMATION 4 EXAMPLE OF A MEASUREM ENT SYSTEM ANALYSIS NOTICE : This related information is not an o fficial pa rt of SEMI E89. It was deri ved from task force deliberations …

100%1 / 7923
SEMI E89-1104
E
© SEMI 1999, 2004 15
R3-2.6 When error terms are known to have
nonnormal distributions, special methods and/or
software (beyond the scope of this guide) are needed.
NOTE 1: The model might also include a wafer-by-day
random error term wd
hki
, if it is suspected that measurements
made from day to day on some wafers might vary differently
than measurements made from day to day on other wafers,
and it is desired to obtain an estimate of this component of
reproducibility.
R3-2.7 Reproducibility includes everything but wafer-
to-wafer true thickness variability, so
222
rpdR
(R3-2)
R3-2.8
The ANOVA for this MSA provides all the
variance estimates needed to calculate repeatability,
reproducibility and precision. If the wafer term w
k
is
random, the ANOVA will also estimate
d
, which is
useful for characterizing the wafer population
variability.
NOTE 2: When inputting this model into a statistical analysis
program, the factors “day” and “wafer” are said to be crossed,
since every wafer is measured on every day. The factor
“positioning” is nested within wafer and day, and
“repeatability” is the residual error term and is nested within
positioning, wafer and day. A factor “A” is nested within
another factor “B” if the levels or values of “A” are different
for every level or value of “B.”
R3-2.9 This example shows how a fairly complicated
MSA can be set up. Each particular situation can lead
to a different model and experimental design,
depending upon the goals and agreed upon sources of
(possibly significant) variation.
SEMI E89-1104
E
© SEMI 1999, 2004 16
RELATED INFORMATION 4
EXAMPLE OF A MEASUREMENT SYSTEM ANALYSIS
NOTICE: This related information is not an official part of SEMI E89. It was derived from task force deliberations
during the revision of SEMI E89-0999 in 2001-2003. This related information was approved by full letter ballot
procedures and was approved for publication by the NA RSC on August 16, 2004.
R4-1 Introduction
R4-1.1 The following example illustrates how an MSA
was performed on an automated wafer film thickness
MS for the purpose of determining the reproducibility
and variance components. The MS was calibrated prior
to the MSA, but the presence of bias would not affect
the estimation of variance components as long as the
amount of bias does not change over the course of the
MSA. Different wafer types were selected to span the
range of both possible wafer types and typical
thicknesses. Five standard wafers were manufactured
with characteristics as shown in Table R4-1.
Table R4-1 Wafers Used for Analysis
Film Type
Total Nominal Film
Thickness (Å)
Oxide (wafers 1, 2, 3) 50, 980, 7900
(for wafers 1, 2, 3,
respectively)
Polysilicon over Oxide
(wafer 4)
2,575
Deep UV Resist over
ARC over Oxide
(wafer 5)
13,000
#1
UV Ultra Violet, ARC Anti Reflective Coating.
R4-1.2 Wafers were measured on eight days, evenly
spaced over a two-week period. On each day of the
MSA each wafer was chosen twice, loaded each time
into the gauge and measured twice without unloading.
The order of selection was random. Therefore, on a
given day, each wafer was measured exactly four times.
Measurements were taken at three points on the wafers
and averaged. The model (see Related Information 3)
used was
M
hkji
=
+ d
h
+ w
k
+ wd
hk
+ c
hkj
+ r
hkji
+ e
hij
(R4-1)
where:
M
hkji
= measurement result (average of measurements
taken at three points each time) on day h,
wafer k, cycle j, and repeat i,
= grand mean of film thickness value across all
conditions,
d
h
= effect or contribution associated with the h
th
day (due to day-to-day stability variation),
w
k
= offset from the average due to the true
thickness of the film on wafer k,
wd
hk
= effect or contribution due to wafer-by-day
(wafer day) interaction,
c
hkj
= effect or contribution due to cycle j, nested in
wafer k and day h,
r
hkji
= effect or contribution due to repeat i, nested in
cycle j, wafer k, and day h, and
e
hij
= residual effect due to all terms not included in
the model.
R4-1.2.1 The variabilities contributed by d
h
, wd
hk
, and
c
hkj
are part of reproducibility. The variability
contributed by r
hkji
is the repeatability.
R4-2 Analysis
R4-2.1 Most statistical analysis software programs
report estimates as variances and produce the variance
components analysis shown in Table R4-2. (Methods
of moments estimates were used. Negative variance
components were set to zero). Sources of variation,
such as
r
and
R
, are standard deviations found by
taking the square roots of the appropriate variance
component or sum of components.
Table R4-2 Variance Components Estimates — All 5
Wafers
Variance
Component
Estimated
Variance
Estimated
Sigma
Day 12.1348 3.4835
Cycle 0.1256 0.3544
Repeat 0 0.0000
Wafer Day
462.9869 21.5171
Residual 0.8446 0.9190
R4-2.2 Wafer variability (
wafer
) was not reported
because it is associated with a fixed effect. Variance
components are only estimated for random effects. If,
for example, the five wafers were randomly selected
from a distribution for a single wafer type, wafer
variability would be included in the table and could be
used to estimate the SNR. However, wafer variability
would still not be part of
R
. For further details, see
Related Information 3.
SEMI E89-1104
E
© SEMI 1999, 2004 17
R4-2.3 Reproducibility (
R
) is calculated as the square
root of the sum of the estimates, i.e.,
12.1348 0.1256 0 462.9869 0.8446
21.82
R

(R4-2)
R4-2.4 Repeatability (
r
) is estimated by the variance
component corresponding to repeat and is equal to zero.
R4-2.5 Stability is estimated by the square root of the
Day component of the MSA,
stability
= 3.4835.
R4-2.6 Figure R4-1 shows a Pareto chart of the sigmas.
0 5 10 15 20
Sigma
Repeat
Cycle
Residual
Day
Day x W afer
Figure R4-1
Pareto Chart for Effects Sigmas (All Five Wafers)
R4-2.7 Linearity is more difficult to estimate. In
general, it is measured by the differences in variability
associated with the different wafer types. The large
wafer-by-day interaction suggests that there may be a
linearity problem. An examination of the standard
deviations for each group by day (see Figure R4-2)
indicates that Wafer Type 5 (Deep UV Resist) may be
responsible. These standard deviations were calculated
from the four measurements made on every wafer each
day.
R4-2.8
When the variance components analysis was
rerun, excluding Wafer Type 5 data, the new estimates
obtained confirmed that Wafer Type 5 was problematic.
An investigation into the potential cause suggested that
the gauge was degrading the resist at the point of
measurement, causing the readings to decrease over
time.
R4-2.9
If one were interested in measuring only Wafer
Types 1 through 4 (employing a different gauge for
Wafer Type 5, for example), the improved variance
components estimates from Table R4-3 could be used.
R4-2.10 The new estimates for
r
and
R
, are 0 and
1.565, respectively. Stability, as measured by day-to-
day variability, improves to 0.6450. The new Pareto
chart of the effects sigmas is shown in Figure R4-3. The
specification range for the product being measured was
given as 10 Å, thus the P/T ratio for the MS for Wafer
Types 1 to 4 is
61.565
100 93.9%
10
P
T

(R4-3)
Table R4-3 Variance Components Estimates for
Wafers 1 – 4
Variance
Component
Estimated
Variance
Estimated
Sigma
Day 0.4160 0.6450
Cycle 0.0203 0.1426
Repeat 0 0
Day x Wafer 1.4918 1.2214
Residual 0.1937 0.4402
012345678
Day
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Standard Deviation
Wafer 1
Wafer 2
Wafer 3
Wafer 4
Wafer 5
Figure R4-2
Wafer Sigmas by Day
0.0 0.4 0.8 1.2
Sigma
Repeat
Cycle
Residual
Day
Day x W afer
Figure R4-3
Pareto Chart for Effects Sigmas
(Wafer Type 5 Removed)