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SEMI M24-1103 © SEMI 1994, 2003 3 50441/1 — Determination of t he Geometric Dimensions o f Semiconducto r Slices: Measurement of Thickness 50441/2 — Determination of t he Geometric Dimensions o f Semiconductor Slices: Te…

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SEMI M24-1103 © SEMI 1994, 2003 2
F 657 — Standard Test Method for Measuring Warp
and Total Thickness Variation on Silicon Wafers by
Noncontact Scanning
F 671 — Standard Test Method for Measuring Flat
Length on Wafers of Silicon and Other Electronic
Material
F 673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Noncontact Eddy-
Current Gage
F 847 — Standard Test Methods for Measuring
Crystallographic Orientation of Flats on Single Crystal
Silicon Wafers by X-Ray Techniques
F 928 — Standard Test Methods for Edge Contour of
Circular Semiconductor Wafers and Rigid Disk
Substrates
F 978 — Standard Test Method for Characterizing
Semiconductor Deep Levels by Transient Capacitance
Techniques
F 1049 — Standard Practice for Shallow Pit Detection
on Silicon Wafers
F 1152 — Standard Test Method for Dimensions of
Notches on Silicon Wafers
F 1188 — Standard Test Method for Interstitial Atomic
Oxygen Content of Silicon by Infrared Absorption
F 1239 — Standard Test Methods for Oxygen
Precipitation Characterization of Silicon Wafers by
Measurement of Interstitial Oxygen Reduction
F 1241 — Standard Terminology of Silicon
Technology
F 1390 — Standard Test Method for Measuring Warp
on Silicon Wafers by Automated Noncontact Scanning
F 1391 — Standard Test Method for Substitutional
Atomic Carbon Content of Silicon by Infrared
Absorption
F 1451 — Standard Test Method for Measuring Sori on
Silicon Wafers by Automated Noncontact Scanning
F 1526 — Standard Test Method for Measuring Surface
Metal Contamination on Silicon Wafers by Total
Reflection X-ray Fluorescence Spectroscopy
F 1530 — Standard Test Method for Measuring
Flatness, Thickness, and Thickness Variation on Silicon
Wafers by Automated Noncontact Scanning
F 1535 — Standard Test Method for Carrier
Recombination Lifetime in Silicon Wafers by
Noncontact Measurement of Photoconductivity Decay
by Microwave Reflectance
F 1617 — Standard Test Method for Measuring Surface
Sodium, Aluminum, and Potassium on Silicon and EPI
Substrates by Secondary Ion Mass Spectroscopy
F 1619 — Standard Test Method for Measurement of
Interstitial Oxygen Content of Silicon Wafers by
Infrared Absorption Spectroscopy with p-Polarized
Radiation Incident at the Brewster Angle
F 1620 — Standard Practice for Calibrating a Scanning
Surface Inspection System Using Monodisperse
Polystyrene Latex Spheres Deposited on Polished or
Epitaxial Surfaces
F 1621 — Standard Practice for Determining Positional
Accuracy Capabilities of a Scanning Surface Inspection
System
F 1725 — Guide for Analysis of Crystallographic
Perfection of Silicon Ingots
F 1726 — Guide for Analysis of Crystallographic
Perfection of Silicon Wafers
3.4 DIN Standards
3
50431 — Measurement of the Electrical Resistivity of
Silicon or Germanium Single Crystals by Means of the
Four-Point-Probe Direct Current Method with Colinear
Four-Probe Array
50432 — Determination of the Conductivity Type of
Silicon or Germanium by Means of Rectification Test
or Hot-Probe
50433/1 — Determination of the Orientation of Single
Crystals by Means of X-Ray Diffraction
50433/2 — Determination of the Orientation of Single
Crystals by Means of Optical Reflection Figure
50433/3 — Determination of the Orientation of Single
Crystals by Means of Laue Back Scattering
50434 — Determination of Crystal Defects in
Monocrystalline Silicon Using Etching Techniques on
{111} and {100} Surfaces
50435 — Determination of the Radial Resistivity
Variation of Silicon or Germanium Slices by Means of
a Four-Point-DC-Probe
50438/1 — Determination of Impurity Content in
Silicon by Infrared Absorption: Oxygen
50438/2 — Determination of Impurity Content in
Silicon by Infrared Absorption: Carbon
50438/3 — Determination of Impurity Content in
Silicon by Infrared Absorption: Boron and Phosphorus
3 Deutsches Institut für Normung e.V., Available from Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany, Website:
www.din.de
SEMI M24-1103 © SEMI 1994, 2003 3
50441/1 — Determination of the Geometric
Dimensions of Semiconductor Slices: Measurement of
Thickness
50441/2 — Determination of the Geometric
Dimensions of Semiconductor Slices: Testing of Edge
Rounding
50441/4 — Determination of the Geometrical
Dimensions of Semiconductor Slices: Diameter and
Flat Depth of Slices
50443/1 — Recognition of Defects and Inhomogenities
in Semiconductor Single Crystals by X-Ray
Topography: Silicon
50445 — Contactless Determination of the Electrical
Resistivity of Semiconductor Wafers with the Eddy
Current Method
3.5 JEITA Standards
4
JEIDA 18 — Determining the Orientation of a
Semiconductor Silicon Single Crystal
JEIDA 27 — Standard Specification for Dimensional
Properties of Silicon Wafers with Specular Surface
JEIDA 43 — Terminology of Silicon Wafer Flatness
JEIDA 53 — Test Method for Recombination Lifetime
in Silicon Wafers by Measurement of
Photoconductivity Decay by Microwave Reflectance
JEIDA 56 — Standard Test Method for Substitutional
Atomic Carbon Content of Silicon by Infrared
Absorption
JEIDA 61 — Standard Test Method for Interstitial
Atomic Oxygen Content of Silicon by Infrared
Absorption
3.6 JIS Standards
5
H 0602 — Testing Method of Resistivity for Silicon
Crystals and Silicon Wafers with Four-Point Probe
H 0607 — Testing Methods for Conductivity Type of
Semiconductor Materials
H 0609 — Test Methods of Crystalline Defects in
Silicon by Preferential Etch Techniques
H 0611 — Methods of Measurement of Thickness,
Taper, and Bow of Silicon Wafers
4 Japanese Electronic and Information Technology Industries
Association, Tokyo Chamber of Commerce and Industry Bldg. 2-2,
Marunouchi 3-chome, Chiyoda-ku, Tokyo 100-0005, Japan.,
Website: www.jeita.or.jp
5 Japanese Industrial Standards, Available through the Japanese
Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo
107-8440, Japan. Telephone: 81.3.3583.8005; Fax: 81.3.3586.2014,
Website: www.jsa.or.jp
H 0614 — Visual Inspection for Silicon Wafers with
Specular Surfaces
Z8741 — Method of Measurement for Specular
Glossiness
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions of terms related to silicon wafer
technology are given in ASTM Terminology F 1241.
4.2 Definitions for some additional terms are given in
SEMI M1.
4.3 The following definitions apply in the context of
this specification:
4.4 Definitions
4.4.1 furnace and thermal processes — wafers
intended for use in evaluating metal contamination in
thermal process.
4.4.2 hand scribe mark — any marking, usually on the
back surface of a wafer, scratched manually into the
silicon surface, as with a diamond-tipped scribe, for
purposes of wafer identification.
4.4.3 lithography and patterning — wafers intended
for use in evaluating pattern resolution.
4.4.4 particle counting — wafers intended for use in
evaluating the particulate contamination added by a
process tool. LLSs (Localized Light Scatterers) include
particles and COP (Crystal Originated Pits).
4.4.5 premium wafer — a silicon wafer suitable for
particle counting, metal contamination monitoring, and
measuring pattern resolution in the photolithography
process. The premium wafer has tighter specification
values in some specific items for the specific usage, and
looser or equal specification values for other items than
a prime wafer has.
5 Ordering Information
5.1 Purchase orders for silicon premium wafers
furnished to this specification shall include the items
from the appropriate specification groups listed in
Table 1.
Table 1 Wafer Classifications
Classification Application
Particle Counting Particle counting
Furnace and Thermal
Process
Metal contamination monitoring
Lithography and Patterning Measurement of pattern
resolution in photolithography
SEMI M24-1103 © SEMI 1994, 2003 4
5.2 Items which may be specified when ordering
silicon wafers are listed in attached specification tables.
Not all of these items are required for ordering
premium wafers.
6 Dimensions and Permissible Variations
6.1 The material shall conform to the dimensions and
dimensional tolerances in attached specification tables.
7 Materials and Manufacture
7.1 The material shall consist of wafers from crystals
grown by the process specified in the purchase order or
contract.
8 Physical Requirements
8.1 The material shall conform to the details specified
in the purchase order.
9 Sampling
9.1 Unless otherwise specified, ASTM Practice E 122
shall be used. When so specified, appropriate sample
sizes shall be selected from each lot in accordance with
ANSI/ASQC Z1.4. Each quality characteristic shall be
assigned an acceptable quality level (AQL) and lot total
percent defective (LTPD) value in accordance with
ANSI/ASQC Z1.4 definitions for critical, major, and
minor classifications. If desired and so specified in the
contract or order, each of these classifications may
alternatively be assigned cumulative AQL and LTPD
values. Inspection levels shall be agreed upon between
the supplier and the purchaser.
10 Test Methods
10.1 Table 1 of SEMI M18 contains a complete listing
of ASTM, DIN, and JEIDA/JIS test methods that may
apply to the testing of specified premium silicon
wafers. These attributes are listed in the order they are
found in the specification (which corresponds to the
order in SEMI M18).
10.2 Conductivity Type — Use any of the methods in
ASTM Test Methods F 42, JIS H 0607, or DIN 50432
for confirming the conductivity type of silicon wafers
covered by this specification.
10.3 Dopant — Confirm the dopant of high resistivity
silicon by the photoluminescence method of ASTM
Test Method F 1389 or by the low-temperature infrared
method of ASTM Test Method F 1630 or DIN 50438/3.
10.4 Resistivity — Determine the electrical resistivity
of the wafer in accordance with ASTM Test Method F
673 or DIN 50445 (eddy current), or ASTM Test
Method F 84, JIS H 0602, or DIN 50431 (four point
probe) using a suitable fixture to hold the wafer.
10.5 Carrier Recombination Lifetime — Determine in
accordance with F 1535 or JEIDA 53.
10.6 Oxygen Content — Determine the interstitial
oxygen content of wafers with resistivity greater than a
few ohm-cm by infrared absorption. ASTM Test
Method F 1188 is the method that was used in
analyzing the results of the international round robin
experiment that established the IOC-88 conversion
coefficient. DIN 50438/1 provides improved procedures
of correcting for back surface roughness and multiple
internal reflections. ASTM Test Method F 1619, based
on work carried out in JEIDA (JEIDA 61) and SEMI
Japan, is an alternative procedure for significantly
reducing errors associated with these two phenomena.
10.7 Carbon Content — For all but very heavily doped
epitaxial substrates, establish the carbon content in
accordance with ASTM Test Method F 1391, JEIDA
56, or DIN 50438/2.
10.8 Total Bulk Iron — No standardized test method
exists for direct determination of total bulk iron content
in silicon. ASTM Test Method F 978 can be used for
direct determination of the electrically active iron.
Extensions of the surface photovoltage method (ASTM
Test Method F 391) and of the microwave lifetime
method (ASTM Test Method F 1535) have been
reported in the literature to provide information on total
bulk iron content of boron-doped silicon; both these
extensions are based on the iron-boron pairing process.
10.9 Structural Characteristics — When feasible
observe crystal defects such as dislocation etch pits,
slip, lineage, twins, etc., in accordance with ASTM Test
Method F 1725, JIS H 0609, or DIN 50434. These
methods are destructive, and with the exception of JIS
H 0609 are based on chromium-containing etchants.
Some structural defects, especially slip, can be
determined nondestructively by means of X-ray
topographic analysis in accordance with DIN 50443/1.
Swirl and oxidation induced stacking faults (OSFs) are
best observed after heat treatment such as those
specified in ASTM Practice F 1726. However, the heat
cycles in this practice were developed for 100 mm
wafers and are not suitable for 300 mm wafers.
Accordingly, thermal cycles used shall be agreed upon
between supplier and purchaser. For observation of
OSFs, a 2-hour heat treatment at 1100°C in steam is
recommended. Observe shallow pits in accordance with
ASTM Practice F 1049.
10.10 Diameter — Diameter may be determined in
accordance with ASTM Test Method F 613 or DIN
50441/4. Because notched wafers do not have flats, it is
not necessary to make the measurements along the
particular diameters identified in ASTM Test Method F
613; rather it is suggested that measurements be made