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SEMI C3-0699 © SEMI 19 86, 1999 12 11 Gas Use T able (see No tes 1 , 2) Gas Use Tabl e Ammonia Argon Arsine Boron Tric hlori de Boron Trifl uoride Boron-11-Trifluoride Carbon Te trfluor ide Chlorine Dibora ne Dichlorosil…

SEMI C3-0699 © SEMI 1986, 199911

7.2.6.6 Of the three aforementioned techniques,

Atomic Absorption Spectrophotometry, Inductively

Coupled Plasma Emission Spectrometry, and Ion

Chromatography, the most sensitive method of

analyzing for a multitude of elements is, without doubt,

graphite furnace (i.e., flameless) Atomic Absorption

Spectrophotometry. However, this instrumental

technique suffers the disadvantage of being slow and

tedious. Consequently, Inductively Coupled Plasma

Emission Spectrometry is rapidly replacing Atomic

Absorption Spectrophotometry for elemental analyses

of liquids since it is a reasonably fast technique

requiring minimal sample preparation with practical

detection limits being superior to those of standard (i.e.,

flame) Atomic Absorption Spectrophotometry for most

elements and approaching those of graphite furnace

Atomic Absorption Spectrophotometry for many of the

elements. An added attractive feature of Inductively

Coupled Plasma Emission Spectrometry is that

eventually it may be used to analyze for elements

directly in gases. Preliminary work, in fact, is currently

being conducted in this area by several research groups.

Although Ion Chromatography can be used to analyze

for a multitude of non

transition metal cations (e.g., Li

, K

, Rb

, Cs

, Mg

, Ca

, Sr

, etc.) it is

limited by the fact that currently only a few transition

metals (e.g., Ni

, Cu

, Co

, Zn

, Fe

, Cd

etc.) can be analyzed by this instrumental technique. IC,

however, has the advantage in that it can be used for

analyzing for complex cationic and especially anionic

species directly (e.g., NH

, NO

, SO

-2

-3

, OC1

, SCN

, CN

, CO

-2

, etc.) and for different

oxidation states for certain elements (e.g., Fe

and

), unlike the other techniques, which are strictly

limited to elemental analyses only. Furthermore, IC is

extremely valuable for analyzing ionic species,

particularly anions (e.g., F

, Cl

, etc.) of many common

elements which otherwise cannot be analyzed directly

by either Atomic Absorption Spectrophotometry or

Inductively Coupled Plasma Emission Spectrometry.

8 Standards

8.1 Certified Standards shall be m ade by weight

traceable to the National Institute of Standards and

Technology.

9 Determination of Precisio n

9.1 To Be Determined.

10 Safety

10.1 Because of the continuing evolution of safety

precautions, it is impossible for this publication to

provide definite statements related to the safe handling

of individual chemicals. The user is referred to product

labels, product data sheets, government regulations, and

other relevant literature.

SEMI C3-0699 © SEMI 1986, 1999 12

11 Gas Use Table (see Notes 1, 2)

Gas Use Table

Ammonia

Argon

Arsine

Boron Trichloride

Boron Trifluoride

Boron-11-Trifluoride

Carbon Tetrfluoride

Chlorine

Diborane

Dichlorosilane

Disilane

Heliu

Hexafluoroethane

Hydrogen

Hydrogen Bromide

Hydrogen Chloride

Hydrogen Fluoride

Methyl Fluoride

Nitrogen

Nitrogen Trifluoride

Nitrous Oxide

Oxygen

Perfluoropropane

Phosphine

Silane

Silicon Tetrachloride

Sulfur Hexafluoride

Trichlorosilane

Trifluoromethane

Tungsten Hexafluoride

Annealing X X

Carrier Gas for Bubblers X X

Chamber Cleans X X X X

CVD Carrier Gas X X

CVD Source X

CVD B Source X

CVD P Source X

CVD Epitaxial X

CVD Nitride X

CVD Oxides X X X X

CVD Polysilicon X X X

CVD Silicides X

Epitaxial Silicon X X X

CVD Silicon Nitride X X X X

CVD Tungsten/Silicide X

Dopants X X

Etching X X X

Metal Etching X X X X X X X X

Nitride Etching X X X X X X X X

Oxide Etching X X X X X X X X X

Silicon Etching X X X X X X X X

Ion Implant X X X X X

Metal Gettering or CVD Tube Cleans X

Nitridation X

Oxide Gettering X X

Oxynitrides X

Plasma Ashing X

Pressurizing Systems X X

Reactive Ion Etch X X

Reducing Gas X

Sputtering X

Inert Gas Blanketing/Purging X X X

NOTE 1: This table is intended to identify various gases

described in the SEMI standards and the typical uses for those

gases in semiconductor processes. It is not all-inclusive. As

other uses arise, they should be brought to the attention of the

Gases Committee so that revisions can be made to this table

as needed.

NOTE 2: Performance of a gas in an application may vary

depending on the impurities in the gas. It is the responsibility

of the user to determine the appropriate gas quality for any

specific application.

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer's

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

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