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SEMI G58-94 © SEMI 1994 1 SEMI G58-94 SPECIFICA TION FOR CERQUAD PACKAGE CONSTRUCTIONS 1 Preface 1.1 Pur pose — This specification d e fi nes the acceptance criteria for Cerqu ad package components and in cl udes requ ir…
SEMI G57-0302 © SEMI 1993, 2002 2
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SEMI G58-94 © SEMI 19941
SEMI G58-94
SPECIFICATION FOR CERQUAD PACKAGE CONSTRUCTIONS
1 Preface
1.1 Purpose — This specification defines the
acceptance criteria for Cerquad package components
and includes requirements for the base, leadframe,
window frame, cap and sealing glass materials.
1.2 Scope — This specification applies to all Cerquad
packages which have a leadframe sandwich between
two ceramic pieces — the base and the window frame
— and sealed by glass, and a cap with a similar glass
seal.
NOTE 1: The base, leadframe and window frame may be
purchased as separate components or as a completed
assembly.
1.3 Units — U.S. Customary (inch -pound) or metric
(SI) units may be used at the customer’s discretion.
This specification uses U.S. Customary units as the
prime unit.
NOTE 2: In the figures only U.S. Customary units are shown.
2 Applicable Documents
2.1 Order of Precedence — To avoid conflicts, the
order of precedence when ordering package
components shall be as follows:
Purchase Order
Customer’s Component Drawings
This Specification
Referenced Documents
2.2 Referenced Documents
2.2.1 SEMI Specifications
SEMI G21 — Plating Integrated Circuit Leadframes
SEMI G23 — Measuring the Inductance of Package
Leads
SEMI G24 — Measuring the Lead-to-Lead and Loading
Capacitance of Package Leads
SEMI G25 — Measuring the Resistance of Package
Leads
Compilation of Terms
2.2.2 JEDEC Specifications
1
Pub. No. 95 — Registered and Standard Outlines for
Semiconductor Devices
1 JEDEC, 2001 Eye Street N.W., Washington, DC 20006.
2.2.3 Military and Federal Specifications
2
MIL-STD-105 — Sampling Procedures and Tables for
Inspection by Attributes
MIL-STD-883 — Test Methods and Procedures for
Microelectronics
MIL-STD-1835 — Microcircuit Case Outlines
MIL-G-45204 — Gold Plating — Electrodeposited
MIL-M-38510 — General Specification for
Microcircuits
3 Selected Definitions
3.1 blister (bubble) metallization — an enclosed
locallized separation of the metallization from its base
material (such as ceramic or another metallization layer
component) that does not expose the underlying layer.
3.2 burr — an adherent fragment of parent material at
a component edge. In leadframes, the metal burr, due to
the stamping operation, may be in the horizontal or
vertical direction to the surface. In ceramic packages,
this type of characteristic is called a fin.
3.3 camber (ceramic) — arching o f a nominally flat
ceramic body.
3.4 chip — region of material missing from a
component (e.g., ceramic from a package, or solder
from a preform). The region does not progress
completely through the component and is formed after
the component is manufactured. Chip size is defined by
its length, width and depth from a projection of the
design planform. Also called chipout. (See Figure 1.)
3.5 crack — a cleavage or fracture that extends to the
surface of a semiconductor package or solder preform.
The crack may or may not pass through the entire
thickness of the package or preform.
3.6 critical seal area — on a semiconductor package,
the area bounded by the shortest nominal design
distance from the largest cavity, usually the wire bond
cavity, to the edge of the package or ceramic layer
forming the seal area. (See Figure 2.)
3.7 fin — on a ceramic package or cap, a fine
feathery-edged projection of parent ceramic material on
the corner of the ceramic body.
2 Military Standards, Naval Publications and Form Center, 5801
Tabor Avenue, Philadelphia, PA 19120
SEMI G58-94 © SEMI 1994 2
3.8 foreign material — an adherent particle that is not
parent material of the component. Adherence means
that the particle cannot be removed by an air or nitrogen
blast at 20 psi.
3.9 glass flow — on a semiconductor package or cap,
the heating process which just removes all the screen
printing mesh marks in the sealing glass when viewed
at 10× magnification.
3.10 glass void — the absence of a sealing glass layer
from a designated area.
3.11 metallization void — the absence of a clad,
evaporated, plated or screen-printed metal layer or
braze from a designated area.
3.12 non-critical seal area — on a semiconductor
package that uses a lid, cap, or cover to effect the seal,
the area of the sealing surface outside the critical
sealing area. (See Figure 2.)
3.13 overhang — on a semiconductor package, the
horizontal extension of the sealing glass past the
vertical wall of a cavity cut into the ceramic layer on
which the glass is printed. (See Figure 3.)
3.14 peeling (flaking) — any separation of a plated,
vacuum deposited, or clad metal layer from the base
metal of a leadframe, pin, heatsink, or seal ring, from an
underplate, or from a refractory metal on a ceramic
package. Peeling exposes the underlying metal.
3.15 projection — on a semiconductor package
(plastic or ceramic), leadframe or preform, and
irregularly raised portion of a surface indiginous to the
parent material.
3.16 pullback — on a semiconductor package, the
linear distance between the edge of a cavity cut into a
ceramic layer and the first measureable glass or
metallization layer interface coated onto the top surface
of that layer. The total pullback may be the result of the
high temperature processing required to manufacture
the package or to coat the surface. It may also be the
result of design considerations. (See Figure 3.)
3.17 rundown — on a semiconductor package, the
linear distance from the upper surface of a ceramic
cavity layer to the bottom point of the overhang into the
cavity, of a sealing glass or metallization layer that has
been screened onto that surface. (See Figure 3.)
4 Ordering Information
Purchase orders for cerquad packages and caps
furnished to this specification shall include the
following items:
4.1 Package description
4.2 Current drawing revision detai ling
All dimensions
Type and color of ceramic
Type and thickness of sealant glass
Leadframe material type and design
Type and thickness of metallization in the lead
bond area
Type and thickness of external lead plating, if
applicable
Type and thickness of die attach metalization
4.3 Vendor certification requirements
4.4 Any additions to, or variations from, this
specification
5 Dimensions
The component described in this specification shall
produce packaged devices that conform to the outline
dimesnions and lead numbering for Cerquad Package
Constructions detailed in: JEDEC Publication 95; EIAJ;
MILSTD1835. Package manufacturing tolerances shall
be agreed between vendor and customer.
6 Materials
The definitions, defect criteria, and functional tests
described in this specification relate to package
components made with the following materials:
6.1 Base, Window Frame, and Cap
6.1.1 Material
6.1.1.1 Alumina — Content to be 90% minimum, or
6.1.1.2 Beryllia — Content to be agreed between
vendor and customer.
6.1.2 Color
6.1.2.1 Alumina — Black, dark brown, or violet.
6.1.2.2 Beryllia — White.
6.2 Sealant — A solder glass suitable for hermetic
sealing shall be specified.
6.3 Die Attach Pad Metallization — Gold or any other
suitable material shall be specified.
6.4 Leadframe
6.4.1 Base Material
6.4.1.1 Thickness — Shall be specified.
6.4.1.2 Composition — Iron-Nickel-Cobalt alloy per
MIL-M-38510, Type A or Iron-Nickel alloy per MIL-
M-38510, Type B shall be specified.