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SEMI F24-0697 © SEMI 1997, 2003 4 RELATED INFORMATION 1 NOTES ON ASPIRATION EFFICIE NCIES OF WALL TAP SAMPLE PORTS NOTICE: This related information is not an offi cial part of SEMI F24 and is n ot intende d to modify or …

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SEMI F24-0697 © SEMI 1997, 2003 3
counter for at least 5 minutes at the instrument
manufacturer’s specified flow rate. The exact purge
time should be sufficient to purge the entire exhaust
line. The purging must be performed before sample gas
is introduced into the sampling system and after
completion of the measurement. The valve leading
from the purge nitrogen system should be closed when
sampling specialty gases and/or a back flow prevention
device should be included in the purge nitrogen system.
7.5 Count the particles in each of at least 3 equal
intervals. Each sample interval must be at least 25
standard liters (0.95 SCF), or 30 minutes, whichever is
greater. Data obtained during the first 5 minutes after
the sample valve is opened may be discarded. Record
the number of counts in the sample volume for each
interval. Calculate
C
X and S
C
, as defined in Section 4.
NOTE 5: For small volume specialty gas systems, the user
and supplier may agree to a smaller sample gas volume than
that stated above. The sample point location and the process
line pressure and flow rate during the test should be recorded.
8 Report
8.1 The report shall contain the values of all the
variables defined in Section 4.
9 Related Documents
Hart, J. J., W. T. McDermott, A. E. Holmer, and J. P.
Natwora, Jr. Particle Measurement in Specialty Gases.
Solid State Technol., 38(9):111–116, September 1995.
Wang, H. C. and R. Udischas. Counting Particles in
High Pressure Electronic Specialty Gases. Solid State
Technol., 37(6):97–107, June 1994.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer's instructions, product labels,
product data sheets, and other relevant literature,
respecting any materials or equipment mentioned
herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor
Equipment and Materials International (SEMI) takes no
position respecting the validity of any patent rights or
copyrights asserted in connection with any items
mentioned in this standard. Users of this standard are
expressly advised that determination of any such patent
rights or copyrights, and the risk of infringement of
such rights are entirely their own responsibility.
SEMI F24-0697 © SEMI 1997, 2003 4
RELATED INFORMATION 1
NOTES ON ASPIRATION EFFICIENCIES OF WALL TAP SAMPLE
PORTS
NOTICE: This related information is not an official part of SEMI F24 and is not intended to modify or supercede the official
standard. Determination of the suitability of the material is solely the responsibility of the user.
R1-1 Introduction
R1-1.1 Isokinetic sample probes are usually not
provided in speciality gas systems. Particle sampling is
usually performed using wall tap sample ports. Wall
tap sample ports are oriented 90° to the process line
flow as shown in Figure R1-1. Non-isokinetic flow into
the sample tube results from the 90° change in flow
direction. Additional deviation from isokinesis can
result from stream tube contraction or expansion when
the velocities U and v are not equal. The effects of
non-isokinetic flow on the measurement should be
checked. The particle sampling process should be
performed with an aspiration efficiency close to 1.
Process Line
v, C
To Sampling System
Wall Tap
D
U, Co, p
Figure R1-1
Schematic Diagram of Process Line and Wall Tap
Sample Port
R1-2 Variables
d
p
= Diameter of particle (cm)
ρ
p
= Intrinsic density of particle (g/cm
3
)
η = Dynamic viscosity of the gas (g/s-cm)
λo = Mean free path of the gas at atmospheric pressure
(cm)
p = Pressure of the gas (Pa)
P
O
= Atmospheric pressure (= 1 × 10
5
Pa)
D = Diameter of wall tap sample tube (cm)
U = Average velocity of the process line flow (cm/s)
v = Average velocity of the sample line flow (cm/s)
C* = Stokes-Cunningham slip correction factor
S
tk
= Stokes number
R = Velocity ratio
Co = Particle concentration in the process line (cm
–3
)
C = Particle concentration in the sample line (cm
–3
)
R1-3 Calculations
R1-3.1 The Stokes-Cunningham slip correction factor
is calculated for particles in the size range of interest:
C* = 1 + 2.492
p
o
λ
o
pd
p
+
0. 84
p
o
λ
o
pd
p
e
0
.
435pd
p
/ p
o
λ
Calculate the velocity ratio and Stokes number. The
intrinsic particle density may assume a worst case value
of 10 g/cm
3
:
R
=U/v
S
tk
=
d
p
2
ρ
p
UC*
18
η
D
A wall tap sample port can be approximated as a
sampling probe oriented 90° to the flow. Calculate the
aspiration efficiency:
C
Co
=
1
1 + 8S
tk
R
1/2
Repeat the calculations for particle sizes in the range of
interest. When the aspiration efficiency is significantly
different from 1, the calculated efficiency should be
used to correct the measured particle concentration, C.
R1-4 References
Stevens, D. C. Review of Aspiration Coefficients of
Thin-Walled Sampling Nozzles. J. Aerosol Sci.,
17(4):729–743, 1986.
Vincent, J. H., D. C. Stevens, D. Mark, M. Marshall,
and T. A. Smith. On the Aspiration Characteristics of
Large-Diameter, Thin-Walled Aerosol Sampling Probes
at Yaw Orientations With Respect to the Wind. J.
Aerosol Sci., 17(2):211–224, 1986.
SEMI F24-0697 © SEMI 1997, 2003 5
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer's instructions, product labels,
product data sheets, and other relevant literature,
respecting any materials or equipment mentioned
herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor
Equipment and Materials International (SEMI) takes no
position respecting the validity of any patent rights or
copyrights asserted in connection with any items
mentioned in this standard. Users of this standard are
expressly advised that determination of any such patent
rights or copyrights, and the risk of infringement of
such rights are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
the contents in whole or in part is forbidden without express written
consent of SEMI.