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SEMI P33-0998 © SEMI 1998 11 the applicability of regulator y limitations prior to use. SEMI makes no warranties or repr esentations as to the suitability of the stan dards set forth herein for any particular application…

SEMI P33-0998 © SEMI 1998 10

camera is projected onto a photoplate, attached to the

stage, and exposed in as many positions as required by

moving the stage between exposures. The product of a

photorepeater is the master mask. (SYN: image

repeater; step-and-repeat camera.)

printing — the transfer of an image from one surface

(substrate) onto another at 1× scale. Usually “printing”

refers to the contact method, but it also can be

accomplished using a 1-to-1 projection optical system.

(SYN: contact printing.)

printing, contact — photoprinting photomask patterns

by exposure of a photosensitive material coated on a

supporting substrate to radiation passing through the

photomask, which is in contact with the photosensitive

material.

printing, off-contact — see printing, proximity.

printing, projection — a method of optically projecting

an image onto a photosensitive material, thus

eliminating the need for photomask/photosensitive-

coating contact.

printing, proximity — photoprinting photomask

patterns by exposure of photosensitive material coated

on a supporting substrate to radiation passing through

the photomask which is in the proximity of, but not in

contact with, the photosensitive material being exposed.

reduction camera — a mechanism used to optically

reduce the size of images and record them

photographically. In two-step reduction, a copy camera

is used for the range of 100× to 1000× reduced to 10×;

the photorepeater reduces from 5× or 10× to 1×. Both

are reduction cameras. See also photorepeater.

registration mark — a mark used to control placement

of one layer relative to another.

repetitive defect — a defect (spot, pinhole, protrusion,

or intrusion) introduced on the reticle so that in

generating a master, it reproduces on every die.

reversal process — a photographic emulsion process

that produces an image which is the same as the input

image (i.e., clear areas remain clear, and opaque remain

opaque). It is named ‘reversal’ because it yields the

‘reverse’ of the standard ‘negative’ process.

Accomplished by developing the negative image,

destroying this image by bleaching, and then

subsequently developing all the original silver halide

that represents the positive image. (SYN: positive-

acting, process, positive process. ANT: negative acting

process, normal process.)

rotation, of array — whole array is properly arranged

(die relative to die), but placed on a blank which is

rotationally mis-aligned. May occur during stepping or

contact printing.

rotation, of die — on a master, misplacement of die by

an angular displacement around the Z-axis. Usually

caused by mispositioning of the reticle in a

photorepeater so that it does not lie parallel to X- and

Y-axis of stage travel.

run-in — a die placement error, where the die

increment is less than the design dimension. This can

occur during stepping, due to nonlinearity of

miscalibration of the photorepeater stage scan scale, or

during contact printing due to plate warpage.

shelf life — the period of time, at specified conditions

of storage, in which the physical and chemical

properties that affect a material’s performance remain

acceptable.

smear — a large area of partially removed coating or

deposited foreign material.

space — area between image geometries; field between

close-lying images. The space is often specified as the

critical dimension. (SYN: field. ANT: digitized area;

geometry.)

spinner — a device for holding a substrate and spinning

it at a controlled rate of speed (usually 1000 to 6000

RPM), for applying extremely thin coating, as with

photoresist.

submaster — a photomask printed in limited quantities

from masters, and from which the working plates are

printed. Used to reduce wear and tear on masters.

test device — a simplified, functional device (of the

same process type as the majority die), inserted in

several positions in any array, used for process control

and monitoring during wafer fabrication.

torn image — image broken by movement of the image

medium. Most often seen on emulsion images.

variable aperture — an aperture whose open area may

be increased or decreased by movement of the elements

forming the aperture.

visual defects — defects that can be identified by a

skilled observer (with or without the aid of a

microscope) without having to measure or compare

(e.g., pinholes, slugs, spots, protrusions, etc.).

working plate — mask used selectively to expose

photoresist on a wafer for IC fabrication. Usually

printed from submasters or masters, thus preserving the

master from excessive handling damage.

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

SEMI P33-0998 © SEMI 199811

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction

of the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI P34-0200 © SEMI 20001

SEMI P34-0200

SPECIFICATION FOR 230 mm SQUARE PHOTOMASK SUBSTRATES

This specification was technically approved by the Global Mask and Mask Equipment Committee and is the

direct responsibility of the North American Microlithography Committee. Current edition approved by the

North American Regional Standards Committee on September 3, 1999. Initially available at www.semi.org

November 1999; to be published February 2000.

1 Purpose

1.1 To define the standard requirements for nominally

square photomask substrates of 230 mm nominal edge

length.

2 Scope

2.1 This specification covers information pertaining to

substrates for 230 mm square photomasks. This

information includes, but is not limited to, physical

dimensions, material properties, and testing and

measurement criteria.

2.2 This standard does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

3 Referenced Standards

3.1 ANSI Standard

ANSI/ASQC Z1.4 — Sampling Procedures and Tables

for Inspection by Attributes

3.2 ASTM Standard

ASTM E228 — Standard Test Method For Linear

Thermal Expansion of Solid Materials With a Vitreous

Silica Dilatometer

3.3 ISO Standard

ISO 14644-1 — Cleanrooms and associated controlled

environments

NOTE 1: As listed or revised, all documents cited shall be the

latest publications of adopted standards.

4 Terminology

4.1 230 mm  the nominal edge length for the reticle

generation defined in this specification. Also referred to

as “9 inch” size.

1 American National Standards Institute, 11 West 42nd Street, 13

Floor, New York, NY 10036

2 American Society for Testing and Materials, 100 Barr Harbor

Drive, West Conshohocken, PA 19428-2959

3 ISO Central Secretariat, 1, rue de Varembé, Case postale 56,

CH-1211 Genève 20, Switzerland

4.2 corner chamfer  the bevel found in one corner

of the substrate, in excess of the edge chamfer, as

defined in Section 9.3 and Figure 6.

4.3 critical side  major side inte nded for patterning.

The critical side has no chamfered corner(s) (see

Section 9.3), and has flatness requirement equal or

better than the non-critical side (see Section 8.1).

4.4 edge chamfer  the bevel found on all

intersections between major and minor sides, as defined

in Section 6.2 and Figure 3.

4.5 non-critical side  major side not intended for

patterning. Any and all chamfered corners are on the

non-critical side (see Section 9.3 and Figures 5 and 6).

5 Ordering Information

5.1 Purchase orders for photomask substrates fur-

nished to this specification shall include the following:

5.1.1 Nominal edge length, nominal thickness, edge

criteria including straightness and squareness, and

parallelism of major sides (see Section 6); straightness

shall be measured on all four minor sides;

5.1.2 Material (see Section 7);

5.1.3 Flatness quality area and flatness Total Indicated

Reading (T.I.R.; see Section 8);

5.1.4 Visual quality area and defect limits (see Section

9); and

5.1.5 Lot acceptance criteria (see Section 10).

6 Dimensions and Permissi ble Variations

6.1 The substrates shall conform to the dimensional

tolerances appropriate to the nominal edge length and

thickness as listed in Table 1. Dimensions are

illustrated in Figure 1 and a fixture for measuring the

squareness dimensions is shown in Figure 2.

6.2 Substrates shall have chamfered edges between

major and minor sides, and rounded corners between

minor sides. The edges shall conform to the dimen-

sional tolerances appropriate to the nominal thickness

listed in Table 2. Dimensions are illustrated in Figure 3.

6.3 The major sides of substrates shall be parallel

within 5.0 µm along both major axes. Measurements