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SEMI M40-0200 © SEMI 2000 25 R1-6 Related Documents ASTM E 1392 — Practice for Angle Resolved Optical Scattering Measu rements on Specular or Diffuse S urfaces ASTM F 104 8 — T est Met hod for M easuring the Effective Su…
SEMI M40-0200 © SEMI 2000 24
Table R1-11 S/N Ratios for the 2
nd
Order Effects of Table R1-9
c1/e1 c1/c2 c1/e2 c1/sym e1/c2 e1/e2 e1/sym c2/e2 c2/sym e2/sym
ravg1 7.7045 10.7110 7.7045 19.2237 10.5897 7.8732 19.0682 10.5897 18.5684 19.0682
ravg5 -2.3106 12.2743 6.3820 10.8291 10.5529 9.0162 10.4414 6.2417 21.3820 21.8517
ravg9 -17.0034 0.7278 8.7438 23.2512 7.3954 -3.1738 23.2558 -11.9623 12.8618 15.1361
Rstdabw5 -9.5587 19.9853 10.2575 -16.7484 7.1802 6.5178 -9.8910 5.1594 -32.1153 -16.1308
Rstdabw9 -8.8505 16.4782 10.2932 -40.5530 0.9730 12.1486 -37.1733 7.4191 -18.3336 -28.6846
R1-5.3.10 The interactions are discussed for two examples, ravg9 and rstdabw5 (Table R1-12). Going from sym lo
(model a, parabolic symmetry) to sym hi (model b, cylindrical symmetry) and keeping c1 fixed at the lo level
decreases ravg9 from 0.993 to 0.963 whereas it increases from 1.007 to 1.037 when c1 is kept fixed at the lo level.
This change in opposite directions indicate an interaction between c1 and sym. c1 and c2 interact in a similar way
with respect to rstdabw5.
Table R1-12 2
nd
Order Effects or Interactions
C1 lo/sym hi 0.963 1.037 c1 hi/sym hi
ravg9
C1 lo/sym lo 0.993 1.007 c1 hi/sym lo
c1 lo/c2 hi 0.219 0.031 c1 hi/c2 hi
stdabw5
c1 lo/c2 lo 0.132 0.223 c1 hi/c2 lo
R1-5.4 Summary and Conclusions
R1-5.4.1 Three different models for surface roughness distribution (roughness maps) were investigated and three
different site patterns for measuring the roughness were applied to them. The parameters of the models – roughness
in the center and near the edge of the wafer – were used as variables in a factorial design and varied between two
levels. Average roughness and the corresponding standard deviations calculated for the site patterns were compared
with the “true” values obtained by evaluating all points of the roughness map.
R1-5.4.2 The patterns where the roughness is measured at five or nine points exhibit a standard deviation of 7 and 5
%, respectively, from the true average value for all possible combinations of the variables. The average of the
standard deviations of the roughness distribution of the single variable sets differs by about 13% from the true value
for the five- as well as nine-point site pattern. A standard deviation of the standard deviations of about 11% is
obtained by averaging over the 32 different variables sets.
R1-5.4.3 The evaluation of the factorial design outlines that the variation of the variables c1, c2, e1, and e2 has a
significant effect – with respect to “noise” – on the average roughness values but not on the corresponding standard
deviations. Varying the surface model does not significantly affect the averages and standard deviations. Some
second order effects or interactions are also significant but less pronounced than the main effects. A pronounced
interaction of the variables c1 and c2 occurs e.g. for the five point standard deviation rstdabw5. This interaction
could be reduced by introducing an additional site for measuring roughness in the center of the wafer with a
direction perpendicular to the present one.
R1-5.4.4 The goal of finding a site pattern which results only in non-significant effects is not completely achieved
by the five and nine point patterns utilized in the present work. However, they allow to measure the average
roughness of wide variety of surface roughness distributions with a one sigma deviation of 5-7 %, or a three sigma
deviation of 15-21 %. These values are certainly more than sufficient for present wafer surfaces.
SEMI M40-0200 © SEMI 200025
R1-6 Related Documents
ASTM E 1392 — Practice for Angle Resolved Optical Scattering Measurements on Specular or Diffuse Surfaces
ASTM F 1048 — Test Method for Measuring the Effective Surface Roughness of Optical Components by Total
Integrated Scattering
J.M. Bennett, L. Mattson, Introduction to Surface Roughness and Scattering, Optical Society of America,
Washington, D.C., 1989
G.E.P. Box, W.G. Hunter, J.S. Hunter, Statistics for Experiments, An Introduction to Design, Data Analysis, and
Model Building, John Wiley, N.Y.
ISO 1879 — Instruments for the measurement of surface roughness by the profile method -- Vocabulary
ISO 3274 — Instruments for the measurement of surface roughness by the profile method – Contact (stylus)
instruments of consecutive profile transformation – Contact profile meters, system M
ISO 4287/1 — Surface roughness – Terminology – Part 1: Surface and its parameters
J.A. Ogilvy, Theory of Wave Scattering from Random Rough Surfaces, IOP Publishing, Bristol, 1991
J.C. Stover, Optical Scattering, Measurement and Analysis, Second Edition, McGraw-Hill, Inc., N.Y. 1995
P. Wagner, H.A. Gerber, in Particles, Haze and Microroughness on Silicon Wafers, SEMICON Europe 1995, W.
Baylies, P. Wagner, Eds.
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SEMI M41-1101 © SEMI2000, 20011
SEMI M41-1101
SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER
DEVICE/ICs
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the Japanese Silicon Wafer Committee. Current edition approved by the Japanese Regional
Standards Committee on August 3, 2001. Initially available at www.semi.org August 2001; to be published
November 2001. Originally published June 2000; previously published July 2001.
1 Purpose
1.1 This specification covers requirements for silicon-
on-insulator (SOI) for semiconductor power-device/IC
manufacture. By defining inspection procedures and
acceptance criteria, both users and suppliers may define
product characteristics and quality requirements.
2 Scope
2.1 This specification provides requirements of SOI
wafers, which are used for power devices/ICs of
specific voltage applications. The voltage ranges cover
low voltage (40–60V), medium voltage (150–250V)
and high voltage (500–600V). The specification covers
physical, electrical, and surface parameters pertinent to
bonded wafers.
2.2 Included in this document is a list of goals for
inspection of these wafers which need to be negotiated
between the users and suppliers of bonded wafers.
2.3 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
SEMI M2 — Specifications for Silicon Epitaxial
Wafers
SEMI M18 — Format for Silicon Wafer Specification
Form for Order Entry
SEMI M34 — Guide for Specifying SIMOX Wafers
3.2 ASTM Standards
1
F26 — Standard Test Methods for Determining the
Orientation of a Semiconductive Single Crystal
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555. Website:
www.astm.org
F42 — Standard Test Methods for Conductivity Type
of Extrinsic Semiconducting Materials
F43 — Standard Test Methods for Resistivity of
Semiconductor Materials
F81 — Standard Test Method for Measuring Radial
Resistivity Variation on Silicon Wafers
F84 — Standard Test Method for Measuring Resistivity
of Silicon Wafers with an In-Line Four-Point Probe
F110 — Standard Test Method for Thickness of
Epitaxial or Diffused Layers in Silicon by the Angle
Lapping and Staining Technique
F154 — Standard Practices and Nomenclature for
Identification of Structures and Contaminants Seen on
Specular Silicon Surfaces
F399 — Standard Test Method for Thickness of
Heteroepitaxial or Polysilicon Layers
F523 — Standard Practice for Unaided Visual
Inspection of Polished Silicon Wafer Surfaces
F533 — Standard Test Method for Thickness and
Thickness Variation of Silicon Wafers
F576 — Standard Test Method for Measurement of
Insulator Thickness and Refractive Index on Silicon
Substrates by Ellipsometry
F613 — Standard Test Method for Measuring
Diameter of Semiconductor Wafers
F671 — Standard Test Method for Measuring Flat
Length on Wafers of Silicon and Other Electronic
Materials
F847 — Standard Test Methods for Measuring
Crystallographic Orientation of Flats on Single Crystal
Silicon Wafers by X-Ray Techniques
F928 — Standard Test Methods for Edge Contour of
Circular Semiconductor Wafers and Rigid Disk
Substrates
F1152 — Standard Test Method for Dimensions of
Notches on Silicon Wafers
F1153 — Standard Test Method for Characterization of
Metal-Oxide-Silicon (MOS) Structures by Capacitance-
Voltage Measurements