semi合集-English.pdf - 第4961页

SEMI M11-0704 © SEMI 1988, 2004 18 Diameter 1 100 125 150 200 300 Density per m 2 Localized Light Scatterers per Wafer Density per cm 2 900 6 10 14 26 60 0.09 1000 7 11 16 29 67 0.10 1100 7 12 17 32 74 0.11 1200 8 13 19 …

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SEMI M11-0704 © SEMI 1988, 2004 17
10.2 The wafers supplied under this specification shall be identified by appropriately labeling the outside of each
box or container and each subdivision thereof in which it may reasonably be expected that the wafers will be stored
prior to further processing. Identification shall include supplier’s name and reference number, purchaser’s p.o.
number, quantity, dopant, orientation, conductivity type of substrates and epitaxial layers, carrier density, and
thickness of the epitaxial layer. The reference number assigned by the supplier shall provide ready access to
information concerning the fabrication history of the particular wafers in that lot. Such information shall be retained
on file at the manufacturer’s facility for at least one year after that particular lot has been shipped.
11 Guides
11.1 The specifications in the epitaxial guides are examples which were formed by a consensus of viewpoints. They
may or may not be used as a foundation to specify an epitaxial wafer for use in device manufacture. Their usefulness
can be increased by considering the guides prior to developing a device design or process. The required specification
is deter-mined by the device and the process design, the guides are suggestions from which a specification can
evolve.
11.2 An epitaxial guide can be viewed as a generic epitaxial wafer specification or as an example of a specification.
These tables provide common epitaxial wafer characteristics which describe starting wafers useful for the
manufacture of some twin tub CMOS devices.
11.3 The guides in Tables 3, 4, 5, 6, 7, 8, 9, and 10 provide a series of options intended to increase the awareness of
epitaxial specifications and to provide information from which a specification can be formulated.
11.4 SEMI M18 was used as a template for formulating these tables. When suitable to the application, the guides
can be used intact, reducing the proliferation of specifications and formats.
11.4.1 Table 3 is representative of 1.0 µm design rule epitaxial wafer criteria.
11.4.2 Table 4 is typical of an epitaxial wafer criteria for custom twin tub CMOS, 0.35 µm design rule devices, such
as, but not limited to ASIC’s, FPGA’s, linears, DSP’s, and microprocessors.
11.4.3 Table 5 is typical of an epitaxial wafer criteria for 0.35 µm design rule devices such as 64 megabit DRAM’s.
11.4.4 Table 6 is typical of epitaxial wafer criteria for twin tub CMOS, 0.25 µm design rule devices, such as, but
not limited to ASIC’s, FPGA’s, linears, DSP’s, and microprocessors.
11.4.5 Table 7 is typical of epitaxial wafer criteria for twin tub CMOS, 0.18 µm design rule devices.
11.4.6 Table 8 is typical of epitaxial wafer substrate criteria for a wafer pre-epitaxial that will be used in twin tub
CMOS, 0.25 µm design rule devices.
11.4.7 Table 9 is typical of epi wafer criteria for twin tub CMOS, 0.13 µm design rule devices.
11.4.8 Table 10 is typical of epi wafer criteria that can be used to develop a wafer specification for 90 nm Design
Rule CMOS devices.
Table 2 Equivalent Units for Localized Light Scatterers
Diameter
1
100 125 150 200 300 Density
per m
2
Localized Light Scatterers per Wafer
Density
per cm
2
100 1 1 2 3 7 0.01
200 1 2 3 6 13 0.02
300 2 3 5 9 20 0.03
400 3 4 6 12 27 0.04
500 3 5 8 14 33 0.05
600 4 6 10 17 40 0.06
700 5 8 11 20 47 0.07
800 5 9 13 23 54 0.08
SEMI M11-0704 © SEMI 1988, 2004 18
Diameter
1
100 125 150 200 300 Density
per m
2
Localized Light Scatterers per Wafer
Density
per cm
2
900 6 10 14 26 60 0.09
1000 7 11 16 29 67 0.10
1100 7 12 17 32 74 0.11
1200 8 13 19 35 80 0.12
1300 9 14 21 38 87 0.13
1400 9 15 22 41 94 0.14
1500 10 16 24 43 100 0.15
1600 11 17 25 46 107 0.16
1700 11 18 27 49 114 0.17
1800 12 19 29 52 121 0.18
1900 13 20 30 55 127 0.19
2000 13 22 32 58 134 0.20
2100 14 23 33 61 141 0.21
2200 15 24 35 64 147 0.22
2300 15 25 36 67 154 0.23
2400 16 26 38 69 161 0.24
2500 17 27 40 72 167 0.25
2600 17 28 41 75 174 0.26
2700 18 29 43 78 181 0.27
2800 19 30 44 81 188 0.28
2900 19 31 46 84 194 0.29
3000 20 32 48 87 201 0.30
3100 21 33 49 90 208 0.31
3200 21 34 51 93 214 0.32
3300 22 35 52 96 221 0.33
3400 23 37 54 98 228 0.34
3500 23 38 55 101 234 0.35
3600 24 39 57 104 241 0.36
3700 25 40 59 107 248 0.37
3800 25 41 60 110 254 0.38
3900 26 42 62 113 261 0.39
4000 27 43 63 116 268 0.40
4100 27 44 65 119 275 0.41
4200 28 45 67 122 281 0.42
4300 29 46 68 124 288 0.43
4400 29 47 70 127 295 0.44
4500 30 48 71 130 301 0.45
4600 31 49 73 133 308 0.46
4700 31 51 74 136 315 0.47
4800 32 52 76 139 321 0.48
4900 33 53 78 142 328 0.49
5000 33 54 79 145 335 0.50
SEMI M11-0704 © SEMI 1988, 2004 19
Table 3 Guide for Specification of 1.0 µm Design Rule, Twin-Tub CMOS, Epitaxial Wafers
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
11. GENERAL EPITAXIAL WAFER AND LAYER CHARACTERISTICS
11.1 Conductivity Type/
Structure
p/p+
11.2 Primary Dopant Boron
11.3 Silicon Source Gas Fixed
11.4 Reactor Type Fixed
Carrier Density (Center) 2.00 ± 1.0 × 10
15
Units carriers per cm
3
11.5
Test Method Mercury Probe SEMI MF1392
11.6 Carrier Density Variation 10% max per SEMI M11
11.7 Thickness (Center) Target ± 10%
11.8 Thickness Variation 10% per SEMI M11
11.11 Phantom Layer none
12. MECHANICAL CHARACTERISTICS: POST EPI
12.5 Flatness/Site
95% of the 18 mm × 18 mm sites " 0.5 µm (SFQD)
includes partial sites
13. FRONT SURFACE CHARACTERISTICS
13.1 Stacking Faults 1 per cm
2
maximum
13.2 Slip/Dislocations none per SEMI MF1726
13.14 Localized Light Scatterers
2000 per m
2
max. ! 0.5 µm LSE, based on calibration
of surface scanning inspection systems with latex
spheres, 90% capture rate
13.5 Scratches none per SEMI MF523, Section 12.2
13.6 Dimples none per SEMI MF523, Section 12.3
13.7 Orange Peel none per SEMI MF523, Section 12.3
13.8 Cracks/Fractures none per SEMI MF523, Section 12.3
13.9 Crow’s Feet none per SEMI MF523, Section 12.3
13.10 Edge Chips none per SEMI MF 523, Section 12.3
13.12 Haze none per SEMI MF523, Section 12.2
12.13 Foreign Matter none per SEMI MF523, Section 12.3
13.15 Nominal Edge Exclusion 4 mm
Surface Metals
" 1 × 10
12
per cm
2
for Zn, Al, Ni " 2 × 10
11
per cm
2
for
each element: Na, Cr, K, Fe, Cu
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 12.4
15. OTHER CHARACTERISTICS - POLISHED WAFER: EPITAXIAL SUBSTRATE — MEETS SEMI M1
15.1 Resistivity 0.005–0.020 #·cm
15.2 Back Seal polysilicon [ ], silicon oxide [ ], silicon nitride [ ],
combination and thickness as required, none [ ]
15.3 Nominal Diameter 125 mm [ ], 150 mm [ ], 200 mm [ ], 300 mm [ ]