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SEMI M9.5-96 © SEMI 1990, 1996 1 SEMI M9 .5-96 STANDARD FOR ROUND 100 mm POL I SHED MONOCRYSTALLINE GALLIU M ARSENIDE WA FERS FOR ELECTRONIC DEVICE AP P L I C AT I O N S NOT E: This e ntire docum ent was r evised in 19 9…
SEMI M9.4-89 © SEMI 1984, 1996 2
Table 2 Orientation and Flat-Location Requirements
Property Requirement
Option V-Groove (see Figures 1 and 3) Dove-Tail (see Figures 2 and 4)
PRIMARY FLAT ORIENTATION (011) ± 0.5°
B
, under an Arsenic facet.
The primary flat shall be perpendicular to
the “V” etch figure.
C
(011) ± 0.5°
B
, under a Gallium facet. The
primary flat shall be perpendicular to the
“Dove-tail” etch figure.
C
SECONDARY FLAT LOCATION 90° ± 5° counterclockwise from the
primary flat.
90° ± 5° clockwise from the primary flat.
SURFACE ORIENTATION
A
A. (100) ± 0.5° (see Figure 1.) (100) ± 0.5° (see Figure 2.)
B. (100) off 2° ± 0.5° towards the(110) plane
which is between the primary and
secondary flats (see Figure 3.)
(100) off 2° ± 0.5° towards any nearest
(110) plane (see Figure 4.)
ORTHOGONAL MISORIENTATION ± 5° (see Figure 5.) ± 5° (see Figure 5.)
A
The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted towards the (110) plane of the crystal.
B
See Table 1.
C
Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 through 4. Figures 1 and 2 also show the
orientation of the V-groove and Dove-tail figures relative to KOH etch pits.
NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish appropriate safety and health practices and determine the
applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability
of the standards set forth herein for any particular application. The determination of the suitability of the standard is
solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are
subject to change without notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M9.5-96 © SEMI 1990, 19961
SEMI M9.5-96
STANDARD FOR ROUND 100 mm POLISHED MONOCRYSTALLINE
GALLIUM ARSENIDE WAFERS FOR ELECTRONIC DEVICE
APPLICATIONS
NOTE: This entire document was revised in 1995.
The complete specification for this product includes all general requirements of SEMI M9.
Table 1 Dimension and Tolerance Requirements
Property Dimension Tolerance Units
DIAMETER
A
100.0 ± 0.5 mm
THICKNESS, CENTER POINT 625 ± 25 µm
PRIMARY FLAT LENGTH 32.5 ± 2 mm
SECONDARY FLAT LENGTH 18 ± 2 mm
A
The diameter standard means that the dimension is centered to this value.
Table 2 Orientation and Flat- Location Requirements
Property Requirement
PRIMARY FLAT ORIENTATION
(
101 ) ± 0.5°
A
, under an Arsenic facet. The primary flat shall be
perpendicular to the “V” etch figure.
B
SECONDARY FLAT ORIENTATION 90° ± 5° counterclockwise from the primary flat.
SURFACE ORIENTATION
C
(100) ± 0.5°
A. (See Figure 1 in SEMI M9.)
B. (100) off 2° ± 0.5° toward the (110) plane which is between the
primary and secondary flats (See Figure 3 in SEMI M9.)
ORTHOGONAL MISORIENTATION ± 5° (See Figure 5 in SEMI M9).
A
See Table 1 in SEMI M9.
B
Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 and 3 in SEMI M9. Figure 1 also shows the
orientation of the V-groove figures relative to KOH etch pits.
C
The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted toward the (110) plane of the crystal.
NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish appropriate safety and health practices and determine the
applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability
of the standards set forth herein for any particular application. The determination of the suitability of the standard is
solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are
subject to change without notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M9.6-95 © SEMI 1995, 19961
SEMI M9.6-95
STANDARD FOR ROUND 125 mm DIAMETER POLISHED
MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS
The complete specification for this product includes all general requirements of SEMI M9.
Table 1 Dimension and Tolerance Requirements
Property Dimension Tolerance Units
DIAMETER 125.0 ± 0.3 mm
THICKNESS, CENTER POINT 625 ± 25 µm
PRIMARY ORIENTATION FLAT
DIAMETER
A
121.0 ± 0.3 mm
SECONDARY FLAT DIAMETER
B
123.5 ± 0.3 mm
A
Actual Primary Orientation Flat Length depends on allowed variation in the wafer diameter and the orientation flat diameter. Variation in
Primary Orientation Flat Length is calculated assuming that the end points of Primary Orientation Flat will have curvature of a circle of radius R
= 0 or R = 3 mm; this circle will be tangent to the orientation flat and also tangent to the wafer circumference. Calculated nominal linear length
of Primary Orientation Flat (the straight part of the flat) are 44.00 mm in a case of R = 0 mm and 42.90 respectively on a case of R = 3 mm.
B
Actual Secondary Flat Length also depends on allowed variation in the wafer diameter and the Secondary Flat Diameter. Variation in
Secondary Flat Length is calculated. Calculated nominal linear lengths of the Secondary Flat (the straight part of the flat) are 27.22 mm in the
case of R = 0 mm, and 26.25 mm, respectively, in the case of R = 3 mm.
Table 2 Orientation and Flat-Location Requirements
Property Requirement
PRIMARY FLAT ORIENTATION (011) ± 1.0°, under an Arsenic facet. The primary flat shall be
perpendicular to the “V” etch figure.
C
SECONDARY FLAT ORIENTATION 90° ± 5° counterclockwise from the primary flat.
SURFACE ORIENTATION
A. (100) ± 0.5° (see Figure 1 in M9.)
B. (100) off 2° ± 0.5° towards the (110) plane which is between
the primary and secondary flats (see Figure 3 in M9.)
ORTHOGONAL MISORIENTATION ± 5° (see Figure 5 in M9.)
A
The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted towards the (110) plane of the crystal.
B
See Table 1.
C
Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 through 4. Figure 1 also shows the orientation of
the V-groove figure relative to the KOH etch pits.
NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish appropriate safety and health practices and determine the
applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability
of the standards set forth herein for any particular application. The determination of the suitability of the standard is
solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are
subject to change without notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.