semi合集-English.pdf - 第6568页

SEMI G85-0703 © SEMI 2001, 2003 6 <Row><! [CDATA[FFFF020CFFFF]]></Row> <Row><! [CDAT A[FF14020C02FF]]></Row > <Row><! [CDATA[0202020C0116 ]]></Row> <Row><! […

SEMI G85-0703 © SEMI 2001, 2003 5

APPENDIX 1

EXAMPLE MAP DATA FILES

NOTICE: The material in this appendix is an official part of SEMI G85 and was approved by full letter ballot procedures on

March 12, 2003.

2 These examples are for a wafer map identified by WaferId. Other substrate types may also be represented. See Table 1.

A1-1 Simple ASCII Wafer Map

A1.1 This example illustrates the simplest possible

wafer map. It uses ASCII bin codes and contains only

the required data items.

<? xml version=" 1.0" ? >

<Map xmlns: " http://www.semi.org"

SubstrateType=" Wafer"

SubstrateId=" ZSDGS88DF" >

<Device

Orientation=" 0"

BinType=" Ascii"

NullBin=" "

OriginLocation=" 1" >

<Data >

</Data>

</Device>

</Map>

A1-2 Detailed Binary Wafer Map

A1-2.1 The example below illustrates the use of binary

bin codes and contains not only the required data items,

but also some data items provided by the supplier.

<? xml version=" 1.0" ? >

<Map xmlns: " http://www.semi.org"

SubstrateType=" Wafer"

SubstrateId =" ZSDGS88DF"

FormatRevision=" SEMI G85-0703" >

<Device

ProductId=" 854CS1C"

LotId=" wksfd87dcj37"

Orientation=" 0"

DeviceSizeX=" 343.8"

DeviceSizeY=" 373.1"

Rows=" 6"

Columns=" 6"

BinType=" HexaDecimal"

FrameId=" KJKSDFK45"

NullBin=" FF"

SupplierName=" Company X"

OriginLocation=" 1"

CreateDate=" 2002110112000000"

LastModified=" 2003010612000000"

Status=" Product" >

<ReferenceDevice

ReferenceDeviceX=" 2"

ReferenceDeviceY=" -3"

RefDevicePosX=" 2"

RefDevicePosY=" 2"

<ReferenceDevice

ReferenceDeviceX=" 4"

ReferenceDeviceY=" -5"

RefDevicePosX=" 2"

RefDevicePosY=" 2"

<Bin

BinCode=" 02"

BinQuality=" Pass"

BinDescription=" 500MHz"

SEMI G85-0703 © SEMI 2001, 2003 6

</Data>

</Device>

</Map>

A1-3 Simple Wafer Map with 2 Byte Bin Codes

A1-3.1 This example illustrates the simplest possible

wafer map. It uses 2 byte bin codes and contains only

the required data items.

<? xml version=" 1.0" ? >

<Map xmlns=" http://www.semi.org"

SubstrateType=" Wafer"

SubstrateId =" ZSDGS88DF" >

<Device

Orientation=" 0"

BinType=" Integer2"

NullBin=" 00FF"

OriginLocation=" 1" >

<Data >

<Row><! [CDATA[00FF00FF0002000C00FF00FF]

]></Row>

<Row><! [CDATA[00FF00140002000C000200FF]

]></Row>

<Row><! [CDATA[000200020002000C00010016]]

></Row>

<Row><! [CDATA[000200010014000C00020002]]

></Row>

<Row><! [CDATA[00FF00140002000C000200FF]

]></Row>

<Row><! [CDATA[00FF00FF0002000C00FF00FF]

]></Row>

</Data>

</Device>

</Map>

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

determination of the suitability of the standard is solely

the responsibility of the user. Users are cautioned to

refer to manufacturer' s instructions, product labels,

product data sheets, and other relevant literature,

respecting any materials or equipment mentioned

herein. These standards are subject to change without

notice.

By publication of this standard, Semiconductor

Equipment and Materials International (SEMI) takes no

position respecting the validity of any patent rights or

copyrights asserted in connection with any items

mentioned in this standard. Users of this standard are

expressly advised that determination of any such patent

rights or copyrights, and the risk of infringement of

such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI G86-0303 © SEMI 2003 1

SEMI G86-0303

TEST METHOD FOR MEASUREMENT OF CHIP (DIE) STRENGTH BY

MEAN OF 3-POINT BENDING

This test method was technically approved by the Global Assembly and Packaging Committee and is the

direct responsibility of the Japanese Packaging Committee. Current edition approved by the Japanese

Regional Standards Committee on January 10, 2003. Initially available at www.semi.org January 2003; to be

published March 2003.

1 Purpose

1.1 This test method defines a procedure for the

evaluation of die strength by the mean of 3-point

bending method.

2 Scope

2.1 This test method applies only for 3-point bending

method, and other methods will be defined by the

separate documents.

2.2 This test method is used to measure die strength for

dies from processed wafers.

2.3 Wafer thinning technology becomes popular to

meet the demand for thin packages, so the die strength

data is critical for the die quality and certification. This

standard is one of the documents, which describe the

Die Strength Evaluation Method, Measurement Data

Summary Technique and Data Usage for Test Report.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Referenced Standards

3.1 ISO Standards

ISO 468: Surface roughness — Parameters, their values

and general rules for specifying requirements

ISO/DIS 6508-1: Metallic materials — Rockwell

hardness test (scales A,B,C,D,E,F,G,H,K,N,T) — Part

1: Test method

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

1 International Organization for Standardization, ISO Central

Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20,

Switzerland. Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30

Website: http://www.iso.ch

4 Terminology

4.1 Definitions

4.1.1 deflection

— distance over which the top or

bottom surface of the test specimen at midspan deviates

from its original position during flexure.

NOTE 1: It is expressed in millimeters (mm).

4.1.2 flexural stress

— nominal stress of the outer

surface of the test specimen at midspan.

NOTE 2: It is calculated from the relationship given in

Section 8.1, equation (1) in Section 9.1, and is expressed in

megapascals (Mpa).

4.1.3 flexural stress at break

— flexural stress at

break of the test specimen.

NOTE 3: It is expressed in megapascals (Mpa).

4.1.4 loading edge — edge to apply the force to test

specimen.

4.1.5 speed of testing v — rate of loading edge

movement .

NOTE 4: It is expressed in millimeters per minute (mm/min).

4.1.6 supports — two supports to support the test

specimen during flexural test.

5 Summary of Method

5.1 This test method is based on 3-point bending test

and calculating the flexural stress at break.

6 Test Apparatus

6.1 Test Machine

6.1.1 The machine shall be capable of maintaining the

test speed with the tolerance of ± 0.05 mm/min.

6.1.2 The machine shall be capable of measuring and

recording the test force in newtons (N).

6.1.3 The error in the indicated force shall not exceed

1% of the actual value.

6.2 Supports and Loading Edge

6.2.1 Two supports and a central loading edge shall be

arranged as shown in Figure 1.