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SEMI E129-1103 © SEMI 2003 2 3 Limitations 3.1 Static Meas urements — Measurements of electrostatic quantities such as charg e, electric field, voltage, and resistance to ground are difficult to make. The nature of the o…

SEMI E129-1103 © SEMI 2003 1

SEMI E129-1103

GUIDE TO ASSESS AND CONTROL ELECTROSTATIC CHARGE IN A

SEMICONDUCTOR MANUFACTURING FACILITY

This guide was technically approved by the Global Metrics Committee and is the direct responsibility of the

North American Metrics Committee. Current edition approved by the North American Regional Standards

Committee on September 3, 2003. Initially available at www.semi.org October 2003; to be published

November 2003.

1 Purpose

1.1 The purpose of this document is to minimize the

negative impact on productivity caused by static charge

in semiconductor manufacturing environments. It is a

guide for establishing electrostatic compatibility in

facilities used for semiconductor manufacturing.

1.2 Electrostatic surface charge causes a number of

undesirable effects in semiconductor manufacturing

environments. Electrostatic discharge (ESD) damages

both products and reticles. ESD events also cause

electromagnetic interference (EMI), resulting in

equipment malfunctions. Charged wafer and reticle

surfaces attract particles (electrostatic attraction or

ESA) and increase the defect rate. Charge on products

can also result in equipment malfunction or product

breakage. Operating problems and additional product

defects due to static charge can have a negative impact

on the cost of ownership of semiconductor

manufacturing equipment (refer to SEMI E35).

1.3 For product and reticle protection or EMI control,

the measurement of the ESD risk of an area is defined

by the presence and nature of the ESD events that

occur. For contamination control by reducing particle

attraction, the static risk of an area is defined by the

presence and level of static charges.

1.4 While an increasing amount of semiconductor

production is done in minienvironments or within the

production equipment, product and reticles must still be

transported throughout the manufacturing facility.

They are both affected by, and the cause of static

problems during transport. Moving personnel in the

manufacturing facility are also sources of static charge

problems. This document addresses the presence of

static charge in the entire facility, including the

production equipment and minienvironments.

1.5 Static control methods can be incorporated in the

factory design to reduce static charge to acceptable

levels. This guide is intended for use primarily by

semiconductor manufacturers and cleanroom facilities

designers during the design of their facilities.

Producers of the silicon wafers and photomasks used in

semiconductor manufacturing will also find it useful.

There are test methods available (see Section 7 and

Related Information 2 of this guide) to demonstrate the

effectiveness of the static control methods. The end

user will be able to use the same test methods to verify

compliance with a facility design specification after the

facility is built or after design changes have been made,

and to verify ongoing compliance as a part of factory

maintenance procedures.

1.6 Semiconductor process technology will continue to

move toward smaller product geometries. Acceptable

static charge levels will decrease with product feature

size. This document will help to assure that facility

static charge limits are appropriate for the product being

manufactured.

2 Scope

2.1 The scope of this document is limited to methods

of measurement and a guide for the maximum

recommended level of static charge on all facility

surfaces including:

• Product, photomasks or their carriers,

• Facility construction materials and furniture,

• Personnel,

• Packaging and transport materials, and

• Equipment (through reference to SEMI E78)

2.2 This document references SEMI E78, SEMI E43

and other methods of measuring static charge as well as

the performance parameters of static control methods.

2.3 Appendix 1 describes the methodology for

determining the maximum recommended static charge

levels that are shown in Section 12.5 Table 1.

NOTE 1: Related Information 1 discusses device sensitivity

measurements, which are the first step in setting

recommended static levels in a facility. Related Information 2

describes static control methods commonly used in

semiconductor manufacturing. Related Information 3

discusses the relationship between ESD and EMI.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the user of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI E129-1103 © SEMI 2003 2

3 Limitations

3.1 Static Measurements — Measurements of

electrostatic quantities such as charge, electric field,

voltage, and resistance to ground are difficult to make.

The nature of the object (insulator or conductor), its

geometry, its surroundings, and the measuring

equipment itself, are only a few of the factors affecting

the accuracy of an electrostatic measurement. In

general, direct measurement of static charge is possible

with small, moveable objects. Larger objects, and those

fixed in position, will need to be characterized by the

electric field that results from the static charge.

3.2 Location — The test methods for static charge and

maximum recommended levels of static charge on

facility surfaces are meant to be applied after the

facility has been built. Testing the performance of

static control methods may be done before or after

construction. It may be difficult to directly relate the

performance of the static control method to the static

charge level that results in the completed facility. Prior

experience of the static control supplier will be a source

of this information.

3.3 Test Methods — The test methods referenced in

this document do not guarantee precise measurements

of static charge levels. The maximum static charge

levels recommended in this document have large

tolerances. See Section 15.1.

3.4 Static Charge Control — There are a variety of

static related issues in a semiconductor-manufacturing

environment. The issues are complex due to the wide

range of electrostatic problems, and device or

equipment sensitivities to these problems. This guide

contains general recommendations. Users of this

document are cautioned that specific static related

problems may require or allow different levels of static

charge than are recommended in this document.

3.5 Measurements

3.5.1 Measurements of Very High Static Potentials

(> 30,000 V) — Measurements of very high static

potentials (> 30,000 V) may need to be done at larger

distances to avoid exceeding the measurement range of

the meter and/or an ESD event to the meter.

3.5.2 Measurements on Moving Objects or Surfaces —

Care should be taken, when attempting to read

electrostatic charges on moving objects or surfaces, to

maintain correct distance and avoid any contact; this is

to ensure "good" readings with no mechanical damage

or personal injury.

4 Referenced Standards

4.1 SEMI Standards

SEMI E10 — Specification for Definition and

Measurement of Equipment Reliability, Availability,

and Maintainability (RAM)

SEMI E33 — Specification for Semiconductor

Manufacturing Facility Electromagnetic Compatibility

SEMI E35 — Cost of Ownership for Semiconductor

Manufacturing Equipment Metrics

SEMI E43

— Guide for Measuring Static Charge on

Objects and Surfaces

SEMI E78 — Electrostatic Compatibility

– Guide to

Assess and Control Electrostatic Discharge (ESD) and

Electrostatic Attraction (ESA) for Equipment

4.2 ESD Association Standards and Advisories

ANSI EOS/ESD S8.1 — ESD Awareness Symbols

ANSI ESD S1.1 — Evaluation, Acceptance, and

Functional Testing of Wrist Straps

ANSI ESD S11.31 — Evaluating the Performance of

Electrostatic Discharge Shielding: Bags

ANSI ESD S20.20 — Standard for the Development of

an ESD Control Program

ANSI ESD S4.1 — Worksurfaces – Resistance

Measurements

ANSI ESD STM11.12 — Volume Resistance

Measurement of Static Dissipative Planar Materials

ANSI ESD STM12.1 — Seating

– Resistive

Characterization

ANSI ESD STM2.1 — Resistance Test Method for

Electrostatic Discharge Protective Garments

ANSI ESD STM3.1 — Ionization

ANSI ESD STM4.2 — Worksurfaces − Charge

Dissipation Characteristics

ANSI ESD STM5.2 — Electrostatic Discharge

Sensitivity Testing

– Machine Model

ANSI ESD STM5.3.1 — Charged Device Model

(CDM) – Component Level

ANSI ESD STM9.1 — Resistive Characterization of

Footwear

ANSI ESD STM97.1 — Floor Materials and Footwear

– Resistance Measurement in Combination with a

Person

1 ESD Association, 7900 Turin Road, Rome, NY 13440, USA

(

www.esda.org)

SEMI E129-1103 © SEMI 2003 3

ESD ADV1.0 — Glossary of Terms

ESD ADV53.1 — ESD Protective Workstations

ESD S6.1 — Grounding – Recommended Practice

ESD SP10.1 — Automated Handling Equipment

ESD STM11.11 — Surface Resistance Measurement of

Static Dissipative Planar Materials

ESD STM5.1 — Electrostatic Discharge Sensitivity

Testing – Human Body Model

ESD STM7.1 — Floor Materials – Resistive

Characterization of Materials

ESD STM97.2 — Floor Materials and Footwear

Voltage Measurement in Combination with a Person

ESD TR11-01 — Electrostatic Guidelines and

Considerations for Cleanrooms and Clean

Manufacturing

ESD TR20.20 — ESD Handbook

4.3 IEC Documents

IEC 61000-4-2 — Electromagnetic compatibility

(EMC) Part 4.2: Testing and measurement techniques

– Electrostatic discharge immunity test, Transient

Immunity Standard, International Electrotechnical

Commission (IEC).

IEC EN 61340-5-1 — Electrostatics – Part 5.1:

Protection of electronic devices from electrostatic

phenomena — General Requirements.

NOTE 2: This replaces CENNELEC 100015-1 — Elements

of a Static Control Program

IEC EN 61340-5-2 — Electrostatics – Part 5.2:

Protection of electronic devices from electrostatic

phenomena – Users’ Guide – Elements of a Static

Control Program

4.4 JEDEC Documents

JESD22-A114 — Electrostatic Discharge (ESD)

Sensitivity Testing Human Body Model (HBM)

JESD22-C101 — Field-Induced Charged-Device

Model Test Methods for Electrostatic Discharge

Withstand Thresholds of Microelectronic Components

JESD625 — Requirements for Handling Electrostatic-

Discharge-Sensitive (ESDS) Devices

2 IEC, 3, Rue de Varembe, CH - 1211 Geneva 20

Switzerland (

www.IEC.org.ch)

3 JEDEC, 2500 Wilson Blvd., Arlington, VA 22201-3834, USA

(

www.jedec.org)

4.5 Other Documents

89/336/EEC — Directive on Electromagnetic

Compatibility – European Commission

BS EN 50082-2 — Electromagnetic Compatibility

(EMC). Generic Immunity Standards. Immunity for

Industrial Environments, British Standards Institution

(BSI)

ITRS 2003 — International Technology Roadmap for

Semiconductors – International SEMATECH

MIL-STD 883 — Test Method Standard –

Microcircuits (Method 3015.7 – Electrostatic Discharge

Sensitivity Classification), Defense Supply Center

Columbus

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

5 Terminology

5.1 Definitions

5.1.1 carrier — a device for holding wafers, dies,

packaged integrated circuits, or reticles for various

processing steps in semiconductor manufacturing (from

SEMI E78).

5.1.2 electromagnetic interference (EMI) — any

electrical signal in the non-ionizing (sub-optical)

portion of the electromagnetic spectrum with the

potential to cause an undesired response in electronic

equipment.

5.1.3 electrostatic attraction (ESA) — the force

between two or more oppositely charged objects.

NOTE 3: The result is increased deposition rate of particles

onto charged surfaces, or movement of charged materials.

5.1.4 electrostatic compatibility — charge control

adequate to allow the manufacturing of products and

the inter-equipment transfer of products, reticles, and

carriers without electrostatic problems.

5.1.5 electrostatic discharge (ESD) — the rapid

spontaneous transfer of electrostatic charge induced by

a high electrostatic field.

NOTE 4: Usually the charge flows in a spark between two

objects at different electrostatic potentials.

4 European Commission, Rue de la Loi, Wetstraat 200, B-1049

Brussels, Belgium (

www.europa.eu.int)

5 BSI, 389 Chiswick High Road, GB - LONDON W4 4AL

(

www.BSI-global.com)

6 International SEMATECH, 2706 Montopolis Drive, Austin, TX

78741, USA (

www.sematech.org)

7 Defense Supply Center Columbus, P.O. Box 3990, Columbus, OH

43216-5000, USA (