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SEMI C22-0699 © SEMI 1994, 1999 2 Table 1 Impurity Limits and Other Requirements f or Boron Tribromide Previ ous SEMI Reference # C7.17 -94 Tier A (Guide line) Color (APHA) 60 max Alum inum (Al) 5 ppb max Antim ony (Sb) …

BORON TRIBROMIDE SEMI C22-0699 © SEMI 1994, 19991

SEMI C22-0699

GUIDELINE FOR BORON TRIBROMIDE

This guideline was technically approved by the Global Process Chemicals Committee and is the direct

responsibility of the North American Process Chemicals Committee. Current edition approved by the North

American Regional Standards Committee on April 23, 1999. Initially available on SEMI OnLine May 1999;

to be published June 1999. This document replaces SEMI C7.17 in its entirety. Originally published in 1994.

1 Purpose

1.1 The purpose of this document is to standardize

requirements for boron tribromide used in the

semiconductor industry and testing procedures to

support those standards. Test methods have been shown

to give statistically valid results. This document also

provides guidelines for grades of boron tribromide for

which a need has been identified. In the case of the

guidelines, the test methods may not have been

statistically validated yet.

2 Scope

2.1 The scope of this document is all grades of boron

tribromide used in the semiconductor industry.

3 Limitations

3.1 None.

4 Referenced Documents

4.1 None.

5 Terminology

5.1 None.

6 Physical Property (for information only)

Clear Colorless Liquid Density at 20°C2.54 g/mL

7 Requirements

7.1 The requirements for boron tribromide for Tier A

are listed in Table 1.

8 Grade 1 Procedures

8.1 This section does not apply to this chemical.

9 Grade 2 Procedures

9.1 This section does not apply to this chemical.

10 Grade 3 Procedures

10.1 This section does not apply to this chemical.

11 Grade 4 Procedures

11.1 This section does not apply to this chemical.

12 Grade 5 Procedures

12.1 This section does not apply to this chemical.

13 VLSI Grade Procedures

13.1 This section does not apply to this chemical.

14 Tier A Procedures

14.1 Standardized test methods are being developed

for all parameters at the purity levels indicated. Until

standardized test methods are published, test

methodology shall be determined by user and producer.

The Process Chemicals Committee considers a test

method to be valid only if there is a documented

recovery study showing a recovery of 75 - 125%.

Recovery is for a known sample spike at 50% of the

specified level.

15 Tier B Procedures

15.1 This section does not apply to this chemical.

16 Tier C Procedures

16.1 This section does not apply to this chemical.

17 Tier D Procedures

17.1 This section does not apply to this chemical.

SEMI C22-0699 © SEMI 1994, 1999 2

Table 1 Impurity Limits and Other Requirements for Boron Tribromide

Previous SEMI Reference # C7.17-94

Tier A

(Guideline)

Color (APHA) 60 max

Aluminum (Al) 5 ppb max

Antimony (Sb) 5 ppb max

Arsenic (As) 10 ppb max

Barium (Ba) 5 ppb max

Bismuth (Bi) 5 ppb max

Calcium (Ca) 10 ppb max

Chromium (Cr) 5 ppb max

Cobalt (Co) 5 ppb max

Copper (Cu) 5 ppb max

Gallium (Ga) 5 ppb max

Gold (Au) 5 ppb max

Iron (Fe) 10 ppb max

Lead (Pb) 5 ppb max

Lithium (Li) 5 ppb max

Magnesium (Mg) 10 ppb max

Manganese (Mn) 5 ppb max

Mercury (Hg) 10 ppb max

Nickel (Ni) 5 ppb max

Potassium (K) 5 ppb max

Silver (Ag) 5 ppb max

Sodium (Na) 5 ppb max

Strontium (Sr) 5 ppb max

Tin (Sn) 5 ppb max

Titanium (Ti) 5 ppb max

Zinc (Zn) 5 ppb max

Particles in bottles:

size, #/mL

≥0.5 µm, 25 max

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

BUFFERED OXIDE ETCHANTS SEMI C23-0301 © SEMI 1981, 20011

SEMI C23-0301

SPECIFICATIONS FOR BUFFERED OXIDE ETCHANTS

These specifications were technically approved by the Global Process Chemicals Committee and are the

direct responsibility of the North American Process Chemicals Committee. Current edition approved by the

North American Regional Standards Committee on October 17, 1999. Initially available at www.semi.org

February 2001; to be published March 2001. This document replaces SEMI C2.2 and C7.23 in their entirety.

Originally published in 1981 and 1997 respectively; previously published June 1999.

1 Purpose

1.1 The purpose of this document is to standardize

requirements for buffered oxide etchants used in the

semiconductor industry and testing procedures to

support those standards. Test methods have been shown

to give statistically valid results. This document also

provides guidelines for grades of buffered oxide

etchants for which a need has been identified. In the

case of the guidelines, the test methods may not have

been statistically validated yet.

2 Scope

2.1 The scope of this document is all grades of

buffered oxide etchants used in the semiconductor

industry.

2.2 These standards do not purport to address safety

issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

3 Limitations

3.1 None.

4 Referenced Documents

4.1 SEMI Standards

SEMI C1 — Specifications for Reagents

4.2 ASTM Standards

ASTM D5127 — Standard Guide for Ultra Pure Water

Used in the Electronics and Semiconductor Industry

NOTE 1: As listed or revised, all documents cited shall be the

latest publications of adopted standards.

5 Terminology

5.1 buffered oxide etchant — any combination of

ammonium fluoride and hydrofluoric acid in which the

concentrations are expressed in terms of the equivalent

1 American Society for Testing and Materials, 100 Barr Harbor

Drive, West Conshohocken, Pennsylvania 19428-2959, USA.

Telephone: 610.832.9585, Fax: 610.832.9555. Website:

www.astm.org

relative volumes of 40% ammonium fluoride solution

and 49% hydrofluoric acid. In the expression, the

relative volumes shall be reduced to a ratio of the

smallest whole numbers which properly describes the

composition. For example, a 7:1 buffered oxide etchant

contains the equivalent of 7 volumes of 40.0%

ammonium fluoride and 1 volume of 49% hydrofluoric

acid.

NOTE 2: Density at temperature.

6 Composition

6.1 For analytical purposes, the absolute

concentrations of ammonium fluoride and hydrofluoric

acid corresponding to the above definition shall be

calculated according to the following equations.

Weight % NH

volume

density

concentration

()

volume

density

()

+ volume

density

()

Weight % HF =

volume

density

concentration()

volume

density()

+ volume

density()

where volume and density are expressed in consistent

units and concentration is in weight percent to three

significant figures.

6.2 Sample calculation for 7:1 buffered oxide etchant

using 40.0% ammonium fluoride, density 1.111 g/mL,

and 49.0% hydrofluoric acid, density 1.153 g/mL. The

absolute percentage concentration of each component

follows:

Weight % NH

7 ×

111

7×1.111+1 ×1.153

= 34.8

Weight % HF =

1×1.153× 49.0

×1

111+1 ×1

= 6.33

7 Tolerances

7.1 The tolerances allowed for the absolute percentage

of each of the components of a buffered oxide etchant

shall be:

Ammonium Fluoride: ± 0.5%

Hydrofluoric Acid: ± 0.15%