semi合集-English.pdf - 第7911页

SEMI T14-1104 © SEMI 2004 8 RELATED INFORMATION 2 APPLICATION NOTES NOTICE : This related information is not an official part of SEMI ( doc# ) an d was derived fro m the Japanese Traceability Committee. This related info…

100%1 / 7923
SEMI T14-1104 © SEMI 2004 7
RELATED INFORMATION 1
APPLICATION NOTES
NOTICE: This related information is not an official part of SEMI (doc#) and was derived from the Japanese
Traceability committee. This related information was approved for publication by full letter ballot on July 23, 2004.
R1-1 Shape and Size of the Protrusion Dot Mark
R1-1.1 A microdot mark is formed by laser irradiation and consists of a single dot mark on each laser-irradiated
point. The mark has a single protrusion, which includes a concave portion provided around the protrusion and lower
than a surface of the wafer and whose center potion protrudes upward so as to be higher than the surface of the
wafer. The length of each dot mark along the surface of the article to be marked should be 6.0 µm + 10% – 20%.
The protrusion height is more than 300 nanometers, formed on each laser irradiate point. (As shown in below Figure
R1-1.)
+10%
- 20%
A
A
A-A
H 300 nm
>
=
6.0 µm
H
NOTE: Figure R1-1 is not to scale.
Figure R1-1
Dot Height & Vertical Cross Section
R1-2 Location of Data Matrix Code Symbol
R1-2.1 Data matrix code location is defined on the front bevel of a 300 mm diameter notched wafer, whose side
view is referred from SEMI M1.
Back Grinded area
Polished Area by
Chemical Mechanical Polishing (CMP)
Remaining area for Micro ID
R
e
f
e
r
e
n
c
e
P
o
i
n
t
NOTE: Figure R1-2 is not to scale.
Figure R1-2
Data Matrix Code Location on Front Bevel Surface of 300 mm Diameter Wafer
Side View
SEMI T14-1104 © SEMI 2004 8
RELATED INFORMATION 2
APPLICATION NOTES
NOTICE: This related information is not an official part of SEMI (doc#) and was derived from the Japanese
Traceability Committee. This related information was approved for publication by full letter ballot on July 23,
2004.
R2-1 References
R2-1.1 The following papers may be referred to understand Micro ID technology presented in this document.
1) Improvement in Reading Precision of Micro-ID Engraved on Wafer, ISSM2003, 2003/09/30
2) Micro-ID Technology for Single Wafer Management, ISSM2002, 2002/10/17
3) New Identification System for Individual Wafer Management, ISSM2000; Session II-6 (2000) Page 33,
2000/9/26
R2-2 SEMI Activities
R2-2.1 Additional information is gathered at 2
nd
round robin of the Micro ID Task Force. Many of such
information turned out to be excellent and valuable in reading the Micro ID.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. Komatsu Ltd. and Toshiba Corp. have filed a statement with
SEMI asserting that licenses will be made available to applicants throughout the world for the purpose of
implementing this standard without unfair discrimination. Attention is also drawn to the possibility that some
elements of this standard may be subject to patented technology or copyrighted items other than those identified
above. Semiconductor Equipment and Materials International (SEMI) shall not be held responsible for identifying
any or all such patented technology or copyrighted items. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights and
the risk of infringement of such rights are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI T14.1-0705 © SEMI 2005 1
SEMI T14.1-0705
SPECIFICATION FOR THE MICRO ID OF SHORT VERTICAL
DIMENSION ON 300 mm WAFERS
This specification was technically approved by the global Traceability Committee. This edition was
approved for publication by the global Audits and Reviews Subcommittee on May 20, 2005. It was available
at www.semi.org in June 2005 and on CD-ROM in July 2005.
1 Purpose
1.1 The purpose of this document is to specify a new means of identification with the Micro ID on 300 mm
polished monocrystalline Silicon wafer with polished edge for process control.
1.2 The objective of the Micro ID is to keep unique information to be assigned in the device manufacturing process
on the location defined on the wafer bevel.
1.3 This sub-document to SEMI T14 is intoned that Micro ID technology should be enhanced further to apply on
more precipitous edge profile 300 mm polished wafers.
2 Scope
2.1 This document assumes that the Micro ID is implemented under the responsibility of Device Manufacturers.
2.2 A two-dimensional data matrix code symbol consists of the microdots marked on the bevel of a semiconductor
wafer.
2.3 Although this specification does not specify the marking techniques that may be employed when complying
with its requirements, it is assumed that the microdots will be obtained by laser irradiated individual dots.
2.4 The data matrix code symbol is applicable to a broad range of wafer products (un-patterned or patterned wafers)
with mirror polished
bevel surface.
2.5 The format and algorithms of this code are based on two-dimensional symbology specified in ISO
1
/IEC
2
ISS
16022.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish appropriate safety health practices and determine the
applicability or regulatory limitations prior to use.
3 Referenced Standards and Documents
3.1 SEMI Standards
SEMI M1 — Specifications of Polished Monocrystalline Silicon Wafers
SEMI T14 — Specification for Micro ID on 300mm Silicon Wafers
3.2 ISO/IEC Standard
ISO/IEC ISS 16022 — International Symbology Specification – Data Matrix
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
4 Terminology
4.1 Definitions
4.1.1 binary values — a protrusion dot in the wafer surface indicates the binary value 1. The absence of a dot or a
smooth surface surrounding a cell center point indicates the binary value 0.
1 International Organization for Standardization, ISO Central Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20, Switzerland.
Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30 Website: http://www.iso.ch
2 International Electrotechnical Commission, 3, rue de Varembé, Case Postale 131, CH-1211 Geneva 20, Switzerland. Telephone:
41.22.919.02.11; Fax: 41.22.919.03.00 Website: http://www.iec.ch