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SEMI M9.4-89 © SEMI 1984, 1996 1 SEMI M9 .4-89 STANDARD FOR ROUND 3 inch DIA M ETER POLISHED MONOCRYSTA LLINE G A LLIUM A RSENIDE SLICES FOR OPTOELEC TRIC A PPLICAT IONS The complete specification for this product includ…
SEMI M9.3-89 © SEMI 1984, 1996 2
Table 2 Orientation and Flat-Location Requirements
Property Requirement
Option V-Groove (See Figures 1 and 3.) Dove-Tail (See Figures 2 and 4.)
PRIMARY FLAT ORIENTATION (011) ± 0.5°
B
, under an Arsenic facet.
The primary flat shall be perpendicular to
the “V” etch figure.
C
(011) ± 0.5°
B
, under a Gallium facet. The
primary flat shall be perpendicular to the
“Dove-tail” etch figure.
C
SECONDARY FLAT LOCATION 90° ± 5° counterclockwise from the
primary flat.
90° ± 5° clockwise from the primary flat.
SURFACE ORIENTATION
A
A. (100) ± 0.5° (See Figure 1.) (100) ± 0.5° (See Figure 2.)
B. (100) off 2° ± 0.5° towards the (110)
plane which is between the primary and
secondary flats (See Figure 3).
(100) off 2° ± 0.5° towards any (110)
plane (See Figure 4).
ORTHOGONAL MISORIENTATION ± 5° (See Figure 5.) ± 5° (See Figure 5.)
A
The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted towards the (110) plane of the crystal.
B
See Table 1.
C
Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 through 4. Figures 1 and 2 also show the
orientation of the V-groove and Dove-tail figures relative to KOH etch pits.
NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish appropriate safety and health practices and determine the
applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability
of the standards set forth herein for any particular application. The determination of the suitability of the standard is
solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are
subject to change without notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M9.4-89 © SEMI 1984, 19961
SEMI M9.4-89
STANDARD FOR ROUND 3 inch DIAMETER POLISHED
MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR
OPTOELECTRIC APPLICATIONS
The complete specification for this product includes all general requirements of SEMI M9.
Table 1 Dimension and Tolerance Requirements
Property Min Max Units
A
DIAMETER 75.82 76.58 mm
2.985 3.015 in.
THICKNESS, CENTER POINT 475 525 µm
0.0187 0.0207 in.
PRIMARY FLAT LENGTH 19.05 25.40 mm in.
0.750 1.000 mm
SECONDARY FLAT LENGTH 9.66 12.70 mm
0.380 0.500 in.
BOW 20 µm
0.0008 in.
A. 50 µm
0.0019 in.
B. 30 µm
0.0011 in.
C. 10 µm
0.0039 in.
TOTAL THICKNESS VARIATION SCHEDULE:
A. 24 µm
0.0009 in.
B. 12 µm
0.0005 in.
C. 8µm
0.0003 in.
D. 4µm
0.0002 in.
A
For referee purposes, metric (SI) units apply.
SEMI M9.4-89 © SEMI 1984, 1996 2
Table 2 Orientation and Flat-Location Requirements
Property Requirement
Option V-Groove (see Figures 1 and 3) Dove-Tail (see Figures 2 and 4)
PRIMARY FLAT ORIENTATION (011) ± 0.5°
B
, under an Arsenic facet.
The primary flat shall be perpendicular to
the “V” etch figure.
C
(011) ± 0.5°
B
, under a Gallium facet. The
primary flat shall be perpendicular to the
“Dove-tail” etch figure.
C
SECONDARY FLAT LOCATION 90° ± 5° counterclockwise from the
primary flat.
90° ± 5° clockwise from the primary flat.
SURFACE ORIENTATION
A
A. (100) ± 0.5° (see Figure 1.) (100) ± 0.5° (see Figure 2.)
B. (100) off 2° ± 0.5° towards the(110) plane
which is between the primary and
secondary flats (see Figure 3.)
(100) off 2° ± 0.5° towards any nearest
(110) plane (see Figure 4.)
ORTHOGONAL MISORIENTATION ± 5° (see Figure 5.) ± 5° (see Figure 5.)
A
The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted towards the (110) plane of the crystal.
B
See Table 1.
C
Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 through 4. Figures 1 and 2 also show the
orientation of the V-groove and Dove-tail figures relative to KOH etch pits.
NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish appropriate safety and health practices and determine the
applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability
of the standards set forth herein for any particular application. The determination of the suitability of the standard is
solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are
subject to change without notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.