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SEMI M11-0704 © SEMI 1988, 2004 24 Table 7 Guide For The Specificat ion Of 0.18 Micron Design Ru le ITEM p/p - EPITAXIAL CIRCUIT WAFER (DRAM) p/p + EPITAXIAL CIRCUIT WAFER (Logic/ DRAM) p/p ++ EPIAXIAL CIRCUIT WAFER (Log…

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SEMI M11-0704 © SEMI 1988, 2004 23
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
11.7 Thickness (Center)
target by agreement within 2–5 µm range ± 5% (1σ)
tolerance
11.8 Thickness Variation 10% per SEMI M11
11.11 Phantom Layer none
12. MECHANICAL CHARACTERISTICS: POST EPI
12.5 Flatness/Site
" 0.25 um (SFQR), site size 22 mm × 22 mm including partial
sites, PUA to be negotiated (See NOTE 1.)
13. FRONT SURFACE CHARACTERISTICS
13.1 Stacking Faults 0.03/cm
2
maximum (See NOTE 2.)
13.2 Slip/Dislocations none per SEMI MF1726, slip with a depth < 0.1 µm acceptable
13.5 Scratches none per SEMI MF523, Section 12.2
13.6 Dimples none per SEMI MF523, Section 12.3
13.7 Orange Peel none per SEMI MF523, Section 12.3
13.8 Cracks/Fractures none per SEMI MF523, Section 12.3
13.9 Crow’s Feet none per SEMI MF523, Section 12.3
13.10 Edge Chips none per SEMI MF523, Section 12.3
13.12 Haze none per SEMI MF523, Section 12.2
13.13 Foreign Matter none per SEMI MF523, Section 12.3
0.36 per cm
2
maximum ! 0.16 µm LSE
(See NOTE 3.)
TBD Localized Light
Scatterers
calibrate using SEMI M53
13.15 Nominal Edge
Exclusion
4 mm for all front surface characteristics except
cracks/fractures, edge chips, crow’s feet, and foreign matter.
" 5 × 10
10
atoms per cm
2
for each of the following elements:
Ca, Cr, Co, Cu, Fe, K, Mn, Mo, Na, Ni, Ti.
7.1 Surface Metals
" 1 × 10
11
atoms per cm
2
for each of the following elements:
Al, V, Zn.
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 13.4
TBD Back Seal user specified
15. OTHER CHARACTERISTICS: POLISHED WAFER-EPITAXIAL SUBSTRATE – MUST MEET SEMI M1 (except when
noted)
2.1 Resistivity
0.005–0.010 Ω·cm [ ], 0.010–0.020 Ω·cm [ ]
TBD Bulk Micro Defects by agreement
TBD Denuded Zone by agreement
TBD Back Seal polysilicon [ ], silicon oxide [ ], combinations and thickness by
agreement, none [ ]
6.1 Diameter 125 mm [ ], 150 mm [ ], 200 mm [ ], 300 mm [ ]
NOTE 1: Based on 1997 process capability. PUA is estimated to be 90%.
NOTE 2: Based on 1997 process capability.
NOTE 3: This requirement is mathematically consistent with the SIA Roadmap value of 0.6 per cm
2
maximum ! 0.12 µm LSE. The SIA
Roadmap value was transformed using draft international standard ISO/DIS 14644-1 which follows the equation: 0.36 per cm
2
= 0.60 per cm
2
/(0.16 µm /0.125 µm)
2.1
.
NOTE 4: TBD — Number to be determined by M-18 Task Force which will also develop EDI coding.
SEMI M11-0704 © SEMI 1988, 2004 24
Table 7 Guide For The Specification Of 0.18 Micron Design Rule
ITEM
p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPIAXIAL
CIRCUIT WAFER
(Logic)
1.0 GENERAL CHARACTERISTICS
1.1 Growth Method Cz or MCz * Cz or MCz * Cz or MCz *
1.2 Crystal Orientation/Tolerance
{100} ± 1° {100} ± 1° {100} ± 1°
1.3 Conductivity Type
p/p
-
p/p
+
p/p
++
1.4 Dopant Boron Boron Boron
1.5 Nominal Edge Exclusion 3 mm 3 mm 3 mm
2.0 ELECTRICAL CHARACTERISTICS
2.1.1 Resistivity (Center Point)
0.8–15 Ω·cm*
(match epi layer)
0.01–0.02 Ω·cm* 0.005–0.010 Ω·cm*
2.1.2 Resistivity (Tolerance) (see row 2.1.1) (see row 2.1.1) (see row 2.1.1)
2.2 Radial Resistivity Variation (RRG) < 20% * < 20% * < 20% *
2.3 Resistivity Striations NS * (See Note 2.) NS * (See Note 2.) NS * (See Note 2.)
2.4 Minority Carrier Recombination Lifetime NS * (See Note 2.) NS * (See Note 2.) NS * (See Note 2.)
3.0 CHEMICAL CHARACTERISTICS
3.1.1 Oxygen Concentration (Nominal) user/supplier user/supplier user/supplier
3.1.2 Oxygen Concentration (Tolerance: within
shipment variation)
± 1.5 ppma * ± 2.0 ppma *
(See Note 3.)
± 2.0 ppma *
(See Note 3.)
3.2 Radial Oxygen Variation " 10% *
10 mm from Edge
" 10% *
10 mm from Edge
" 10% *
10 mm from Edge
3.3 Carbon Concentration " 0.5 ppma * See Note 3 See Note 3
4.0 STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit Density NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
4.2 Slip none none none
4.3 Lineage none none none
4.4 Twin none none none
4.5 Swirl none none none
4.6 Shallow Pits none none none
4.7 Oxidation-Induced Stacking Faults (OSF) NS * (See Note 2.) NS * (See Note 2.) NS * (See Note 2.)
4.8
Oxide Precipitates (BMD) O
i
Reduction (∆O
i
)
user/supplier user/supplier user/supplier
5.0 WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking Per SEMI M1 Per SEMI M1 Per SEMI M1
5.2 Front Surface Thin Film(s)
5.3 Denuded Zone user/supplier user/supplier user/supplier
5.4 Extrinsic Gettering Treatment user/supplier user/supplier user/supplier
5.5 Backseal none None or as user/
supplier agreement
None or as user/
supplier agreement
5.6 Annealing None or as user/
supplier agreement
None or as user/
supplier agreement
None or as user/
supplier agreement
6.0 MECHANICAL CHARACTERISTICS
6.1 Diameter
300 ± 0.2 mm
or
200 ± 0.2 mm
300 ± 0.2 mm
or
200 ± 0.2 mm
300 ± 0.2 mm
or
200 ± 0.2 mm
6.2 Diameter Notch Dimensions Per SEMI M1 Per SEMI M1 Per SEMI M1
6.2.1 Notch Depth 1 + 0.25,
-0.00 mm
1 + 0.25,
-0.00 mm
1 + 0.25,
-0.00 mm
SEMI M11-0704 © SEMI 1988, 2004 25
ITEM
p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPIAXIAL
CIRCUIT WAFER
(Logic)
6.2.2 Notch Angle 90 +5, -1 degrees 90 +5, -1 degrees 90 +5, -1 degrees
6.3 Notch Orientation
<110> ± 1° <110> ± 1° <110> ± 1°
6.6 Edge Profile* Per SEMI M1 Per SEMI M1 Per SEMI M1
6.6.1 Edge Surface Finish Polished * Polished * Polished *
6.7 Thickness 300 mm per SEMI
M1
300 mm per SEMI
M1
300 mm per SEMI
M1
6.7.1 Thickness Variation (9-Point TTV) NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.7.2 Thickness Variation (GBIR)
" 3 µm " 3 µm " 3 µm
6.10 Bow NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.11 Warp
(only process control data required)
" 50 µm " 50 µm for wafers
without backseal
" 100 µm for wafers
with backseal
" 50 µm for wafers
without backseal
" 100 µm for wafers
with backseal
6.12 Sori NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.13 Flatness/Global NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.14
B
Flatness/Site (See NOTE 4)
SFSR " 0.18 µm SFSR " 0.18 µm SFSR " 0.18 µm
7.0 FRONT SURFACE CHEMISTRY
7.1 Surface Metal Contamination
Sodium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Aluminum
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
Potassium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Chromium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Iron
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Nickel
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Copper
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Zinc
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
Calcium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
8.0 FRONT SURFACE CRITERIA
8.1A Scratches (macro) none none none
8.1B Scratches (micro) " 10 mm (total
length)
" 10 mm (total
length)
" 10 mm (total
length)
8.3 Localized Light Scatterers
– Only particles for epitaxial wafers
– Sizes are PSL equivalents
" 60 @ ! 0.09 µm
(300 mm)
" 27 @ ! 0.09 µm
(200 mm)
or (See NOTE 5)
" 34 @ ! 0.12 µm
(300 mm)
" 15 @ ! 0.12 µm
(200 mm)
" 60 @ ! 0.09 µm
(300 mm)
" 27 @ ! 0.09 µm
(200 mm)
or (See NOTE 5)
" 34 @ ! 0.12 µm
(300 mm)
" 15 @ ! 0.12 µm
(200 mm)
" 60 @ ! 0.09 µm
(300 mm)
" 27 @ ! 0.09 µm
(200 mm)
or (See NOTE 5)
" 34 @ ! 0.12 µm
(300 mm)
" 15 @ ! 0.12 µm
(200 mm)
8.4 Edge Chips none none none
8.5-
8.16
OTHER none none none
9.0 BACK SURFACE CRITERIA
9.1 Edge Chips none none none