semi合集-English.pdf - 第6626页
SEMI C20-1101 © SEMI 1978, 2001 A MMO N I U M FLU O R ID E 40 % 4 Previous SEMI Ref erenc e # C1.3-95 C11.2-94 C7.18-9 5 -- Grade 1 VLSI Grade Tier A Tier B (Specif ication) (Guide line) (Guideline) (Guideline) Particles…
AMMONIUM FLUORIDE 40% SEMI C20-1101 © SEMI 1978, 20013
Table 1 Impurity Limits and Other Requirements for Ammonium Fluoride 40%
Previous SEMI Reference # C1.3-95 C11.2-94 C7.18-95 --
Grade 1 VLSI Grade Tier A Tier B
(Specification) (Guideline) (Guideline) (Guideline)
Assay (NH
4
F) 39.0–41.0% min 39–41% min 39.0–41.0% 39.0–41.0%
Color (APHA) 10 max 10 max 10 max 10 max
Residue after Ignition -- 10 ppm max -- --
pH (1% solution at 25°C)
6.0–7.5 6.2–7.0 6.0–7.5 6.0–7.5
Ammonium Hydrogen Fluoride (NH
4
HF
2
) -- 200 ppm max -- --
Chloride (Cl) 4 ppm max 2 ppm max 2 ppm max 2 ppm max
Nitrate (NO
3
) 10 ppm max 10 ppm max 3 ppm max 3 ppm max
Phosphate (PO
4
) 1 ppm max 0.2 ppm max 0.5 ppm max 0.5 ppm max
Sulfate (SO
4
) 2 ppm max 2 ppm max 2 ppm max 2 ppm max
Aluminum (Al) 0.2 ppm max 0.05 ppm max 10 ppb max 1 ppb max
Antimony (Sb) -- -- 10 ppb max 1 ppb max
Arsenic (As) -- -- 10 ppb max 1 ppb max
Arsenic and Antimony (as As) 0.03 ppm max 0.03 ppm max -- --
Barium (Ba) -- 0.01 ppm max 10 ppb max 1 ppb max
Beryllium (Be) -- 0.01 ppm max -- --
Bismuth (Bi) -- 0.02 ppm max -- --
Boron (B) 0.2 ppm max 0.05 ppm max 10 ppb max 1 ppb max
Cadmium (Cd) -- 0.01 ppm max 10 ppb max 1 ppb max
Calcium (Ca) 0.2 ppm max 0.1 ppm max 10 ppb max 1 ppb max
Chromium (Cr) 0.1 ppm max 0.01 ppm max 10 ppb max 1 ppb max
Cobalt (Co) -- 0.01 ppm max -- --
Copper (Cu) 0.1 ppm max 0.01 ppm max 10 ppb max 1 ppb max
Gallium (Ga) -- 0.01 ppm max -- --
Germanium (Ge) -- 0.05 ppm max -- --
Gold (Au) 0.3 ppm max 0.02 ppm max -- --
Indium (In) -- 0.01 ppm max -- --
Iron (Fe) 0.2 ppm max 0.05 ppm max 10 ppb max 1 ppb max
Lead (Pb) 0.3 ppm max 0.01 ppm max 10 ppb max 1 ppb max
Lithium (Li) -- 0.01 ppm max 10 ppb max 1 ppb max
Magnesium (Mg) 0.2 ppm max 0.05 ppm max 10 ppb max 1 ppb max
Manganese (Mn) 0.2 ppm max 0.01 ppm max 10 ppb max 1 ppb max
Molybdenum (Mo) -- 0.01 ppm max -- --
Nickel (Ni) 0.3 ppm max 0.01 ppm max 10 ppb max 1 ppb max
Platinum (Pt) -- 0.05 ppm max -- --
Potassium (K) 0.3 ppm max 0.05 ppm max 10 ppb max 1 ppb max
Silicon (Si) -- 200 ppm max 3000 ppb max
(See NOTE 1.)
--
Silver (Ag) -- 0.05 ppm max -- --
Sodium (Na) 0.3 ppm max 0.1 ppm max 10 ppb max 1 ppb max
Strontium (Sr) -- 0.01 ppm max -- --
Thallium (Tl) -- 0.02 ppm max -- --
Tin (Sn) 0.2 ppm max 0.02 ppm max 10 ppb max 1 ppb max
Titanium (Ti) 0.3 ppm max 0.01 ppm max 10 ppb max 1 ppb max
Vanadium (V) -- 0.01 ppm max 10 ppb max 1 ppb max
Zinc (Zn) 0.2 ppm max 0.05 ppm max 10 ppb max 1 ppb max
Zirconium (Zr) -- 0.01 ppm max -- --
SEMI C20-1101 © SEMI 1978, 2001 AMMONIUM FLUORIDE 40%4
Previous SEMI Reference # C1.3-95 C11.2-94 C7.18-95 --
Grade 1 VLSI Grade Tier A Tier B
(Specification) (Guideline) (Guideline) (Guideline)
Particles in bottles:
size, #/mL
≥ 1.0 µm, 25 max ≥ 0.5 µm, 250 max
See NOTE 2. See NOTE 2.
NOTE 1: For III-V compound users only.
NOTE 2: Due to the limitations of current particle counters, particle size and number are to be agreed upon between supplier and user. See SEMI
C1, Section 3.9 for particle counting methodology.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standard set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant
literature respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
AMMONIUM HYDROXIDE SEMI C21-0301 © SEMI 1978, 20011
SEMI C21-0301
SPECIFICATIONS AND GUIDELINES FOR AMMONIUM HYDROXIDE
These specifications and guidelines were technically approved by the Global Process Chemicals Committee
and are the direct responsibility of the North American Process Chemicals Committee. Current edition
approved by the North American Regional Standards Committee on October 17, 1999. Initially available on
SEMI OnLine February 2001; to be published March 2001. This document replaces SEMI C1.4, C7.1, C8.1,
C11.1, and C17.1 in their entirety. Originally published in 1978, 1990, 1992, 1994, and 1997 respectively;
previously published June 2000.
1 Purpose
1.1 The purpose of this document is to standardize
requirements for ammonium hydroxide used in the
semiconductor industry and testing procedures to
support those standards. Test methods have been shown
to give statistically valid results. This document also
provides guidelines for grades of ammonium hydroxide
for which a need has been identified. In the case of the
guidelines, the test methods may not have been
statistically validated yet.
2 Scope
2.1 The scope of this document is all grades of
ammonium hydroxide used in the semiconductor
industry.
2.2 The VLSI grade purity level is typically required
by semiconductor devices with geometries of 0.8–1.2
microns.
2.3 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
3 Limitations
3.1 The guideline for VLSI grade ammonium
hydroxide is only applicable for materials that remain
below 25°C during transport and storage.
4 Referenced Standards
4.1 SEMI Standards
SEMI C1 — Specifications for Reagents
4.2 ASTM Standards
1
ASTM D5127 — Standard Guide for Ultra Pure Water
Used in the Electronics and Semiconductor Industry
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555. Website:
www.astm.org
NOTE 1: As listed or revised, all documents cited shall be the
latest publications of adopted standards.
5 Terminology
5.1 None.
6 Physical Property (for information only)
Density at 25°C
0.90 g/mL
7 Requirements
7.1 The requirements for ammonium hydroxide for
Grades 1, 2, 3, and 4, and VLSI Grade are listed in
Table 1.
8 Grade 1 Procedures
NOTE 2: Each laboratory is responsible for verifying the
validity of the method within its own operation.
8.1 Assay — Accurately weigh a small glass-stoppered
flask containing about 15 mL of water. Deliver from a
pipet about 2 mL of the sample near the water surface,
stopper immediately, and reweigh. Add 0.1 mL of
methyl red indicator solution and titrate with
standardized 1 N hydrochloric acid to a yellow-to-red
color change.
%Assay
=
mL
×
N
of HCl
×
1.703
Weight of sample g
()
8.2 Appearance — Place 15 mL of the sample in a 20
× 150 mm test tube and compare with water in a similar
tube. Viewed across the column by means of
transmitted light, the two liquids should be equal in
clarity and free from suspended matter.
8.3 Color — Dilute 2.0 mL of platinum-cobalt stock
solution (APHA No. 500) to 100 mL with water.
Compare this standard (APHA No. 10) with 100 mL of
sample in Nessler tubes. View vertically over a white
background. The sample must be no darker than the
standard.
8.4 Carbon Dioxide — Dilute 11 mL (10 g) of sample
with 10 mL of carbon dioxide-free water and add 5 mL
of a clear, saturated solution of barium hydroxide. Any
turbidity should be no greater than that produced when