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SEMI M24-1103 © SEMI 1994, 2003 8 CLASSIFICATION ITEMS (SEMI M18) Particle Counting Furnace & Thermal Process Lithography & Patterning Test Method 3.- Total Bulk Iron Concen tration ≤ 5 × 10 10 /cm 3 ASTM F 978 4…

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SEMI M24-1103 © SEMI 1994, 2003 7
13.2 The wafers supplied under this specification shall be identified by appropriately labeling the outside of each
box or other container and each subdivision thereof in which it may reasonably be expected that the wafers will be
stored prior to further processing. Iden-tification shall include, as a minimum, wafer classifi-cation, nominal
diameter, surface orientation, growth method, lot number, and origin. In addition, identifi-cation of premium wafers
shall include conductivity type and resistivity range of the lot. The lot number, either (1) assigned by the original
manufacturer of the wafer, or (2) assigned subsequent to wafer manufacture but providing reference to the original
lot number, shall provide easy access to information concerning the fabrication history of the particular wafers in
that lot. Such information shall be retained on file at the vendor's facility for at least one month after that particular
lot has been accepted by the purchaser.
Table 2 Specification for Polished Monocrystaline Silicon Premium Wafers for 250 nm Design Rule Usage
CLASSIFICATION ITEMS
(SEMI M18)
Particle Counting Furnace & Thermal
Process
Lithography &
Patterning
Test Method
(The specification is deleted in SEMI M24, the original table can be referred to in SEMI M24 1999 to 2001
versions.)
Table 3 Specification for Polished Monocrystalline Silicon Premium Wafers for 180 nm Design Rule Usage
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace & Thermal
Process
Lithography &
Patterning
Test Method
1. GENERAL CHARACTERISTICS
1.1 Growth Method Cz or MCz Cz or MCz Cz or MCz
1.2. Crystal Orientation
(100) ± 1° (100) ± 1° (100) ± 1°
ASTM F 26,
DIN 50433
1.3 Conductivity Type n or p n or p n or p ASTM F 42,
JIS H607
DIN 50432
1.4 Dopant P or B P or B P or B ASTM F 1389,
F 1630, DIN
50438/3
1.5 Nominal Edge Exclusion
(Fixed Quality Area) (See Note 1.)
300 mm: 2 mm
200 mm: 3 mm
300 mm: 2 mm
200 mm: 3 mm
300 mm: 2 mm
200 mm: 3 mm
2. ELECTRICAL CHARACTERISTICS
2.1 Resistivity, Center Point NS ≥ 1 Ω-cm
(See Note 4.)
ASTM F 84, F 673,
JIS H 602,
DIN 50431, 50445
2.2 Radial Resistivity Variation NS NS ASTM F 81,
DIN 50435
2.4 Minority Carrier Lifetime
(Carrier Recombination Lifetime)
NS ≥ 325 µs
(See Note 4.)
NS
JEIDA 53, F 1535
3. CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration:
Spec. Range of Center Point: Target
≤ 1.2 × 10
18
/cm
3
ASTM F 1188,
F 1619
DIN 50438/1,
JEIDA 61
3.1.1 Oxygen Concentration:
Tolerance Around Center Point: Target
≤ 10%
3.2 Radial Oxygen Variation NS
3.3 Carbon Concentration
NS
≤ 0.2 ppma
NS
ASTM F 1391,
DIN 50438/2,
JEIDA 56
SEMI M24-1103 © SEMI 1994, 2003 8
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace & Thermal
Process
Lithography &
Patterning
Test Method
3.- Total Bulk Iron Concentration
≤ 5 × 10
10
/cm
3
ASTM F 978
4. STRUCTURAL CHARACTERISTICS (See Note 9.)
4.1 Dislocation Etch Pit Density ≤ 500/cm
2
ASTM F 1725,
JIS H 609,
DIN 50434, 50443/1
4.2 Slip None ASTM F 1725
JIS H 609, DIN
50434, 50443/1
4.3 Lineage None ASTM F 1725,
JIS H 609, DIN
50434, 50443/1
4.4 Twin None ASTM F 1725,
JIS H 609, DIN
50434, 50443/1
4.5 Swirl None ASTM F 1726,
JIS H 614,
DIN 50443/1
4.6 S-pits
NS
None
NS
ASTM F 1726,
F 1049
4.7 Oxidation Induced Stacking Faults (OSF) User/Vendor ASTM F 1726,
User/Vendor mutual
agreement
4.8 Oxide Precipitates (BMD)
Interstitial Oxygen Reduction (∆ Oi)
User/Vendor
ASTM F 1239,
User/Vendor mutual
agreement
5.WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking (See Note 2.) Optional Optional Optional
5.3 Denuded Zone NS NS NS
5.4 Extrinsic Gettering Treatment None None None
5.5 Backseal NS None NS
5.6 Annealing NS Donor Annih. Only NS
6. MECHANICAL CHARACTERISTCS
6.1 Diameter 200 and 300 mm 200 and 300 mm 200 and 300 mm ASTM F 613,
DIN 50441/4,
JEIDA27
6.2 Primary Flat Length/Diameter
Notch Dimensions
ASTM F 671,
F 1152, DIN
50441/4
JEIDA 27,
6.3 Primary Flat/
Notch Orientation
ASTM F 847
6.4 Secondary Flat Length ASTM F 671,
DIN 50441/4
6.5 Secondary Flat Location
SEMI M1 SEMI M1 SEMI M1
ASTM F 847
6.6 Edge Profile SEMI M1 SEMI M1 SEMI M1 ASTM F 928,
DIN 50441/2
6.- Edge Surface Finish Polished Polished Polished
6.7 Thickness, Center Point SEMI M1 SEMI M1 SEMI M1 ASTM F 533,
JIS H 611,
DIN 50441/1
6.- Nine-point Thickness Variation - - -
SEMI M24-1103 © SEMI 1994, 2003 9
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace & Thermal
Process
Lithography &
Patterning
Test Method
6.8 Total Thickness Variation, GBIR
≤ 10 µm ≤ 10 µm ≤ 5 µm
ASTM F 533, F 657,
JIS H 611,
DIN 50441/1
6.9 Surface Orientation - - - ASTM F 26, JEIDA
18, DIN 50433
6.10 Bow - - - ASTM F 534,
JIS H 611
6.11, 12 Warp, Sori NS NS
300 ≤ 100 µm
200 ≤ 75 µm
ASTM F 657,
F 1390, F 1451
6.13 Flatness/Global, GFLR NS ASTM F 1530,
JEIDA 43
6.14 Flatness/Site, SFQR
(25 × 25 mm, PUA 90%)
SFSR (25 mm × 32 mm)
NS NS
≤ 180 nm
≤ 150 nm
7. FRONT SURFACE CHEMISTRY
7.1 Surface Metal Concentration
(atoms/cm
2
)
Sodium
Aluminum
Chromium
Iron
Nickel
Copper
Zinc
Calcium
(See Note 6.)
≤ 5.0 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.0 × 10
11
/cm
2
(See Note 5.)
≤ 1.8 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.8 × 10
10
/cm
2
(See Note 6.)
≤ 5.0 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 5.0 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.0 × 10
11
/cm
2
User/Vendor
Mutual Agreement,
ASTM F 1526,
ASTM F 1617
8. FRONT SURFACE INSPECTION CHARACTERISTICS
8.1 A Scratches, Macro None None None ASTM F 154, F 523,
JIS H 614
8.1 B Scratches, Micro None
≤ 1/10 × D mm ≤ 1/10 × D mm
ASTM F 154,
JIS H 614
8.2 Pits None None SEMI M1 ASTM F 154, F 523,
JIS H 614
8.3 Haze None None SEMI M1 ASTM F 154, F 523,
JIS H 614
≤ 0.29/cm
2
NS
NS
8.4 Localized Light Scatterers (LLSs)
(≥ 90 nm) (See Note 3.)
(≥ 180 nm) (See Note 7.)
- ≤ 0.15/cm
2
≤ 0.15/cm
2
SEMI M25,
ASTM F 523,
F 1620, F 1621
8.5 Contamination/Area None None None ASTM F 154, F 523,
JIS H 614
8.6 Edge chips None None None ASTM F 154, F 523,
JIS H 614
8.7 Cracks, Crow’s Feet None None None ASTM F 154, F 523,
JIS H 614
8.8 Craters None None None ASTM F 154, F 523,
JIS H 614
8.9 Dimples None None None ASTM F 154, F 523,
JIS H 614
8.10 Grooves None None None ASTM F 154, F 523,
JIS H 614