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SEMI P38-1103 © SEMI 2002, 2003 5 L D d W d Defect quality area L Figure 3 Dimensions of Defect Quality Area 0% 20 % 40 % 60 % 80 % 13 13. 2 13. 4 13. 6 13. 8 W a v e le n g t h ( n m ) R e fl e c ti v i t y M e d i an w…

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SEMI P38-1103 © SEMI 2002, 2003 4
Substrate
Absorber layer(s)
Buffer layer
Multilayer
Capping layer(s)
Patterned mask
Unpatterned mask or mask blank
Absorber
stack
Multilayer
stack
Underlayer(s)
Resist
Conductive layer
Multilayers
Figure 1
Definition of Absorber, Buffer, Capping Layer, Multilayers, Absorber Stack, and Multilayer Stack
D
l
W
l
Layer
quality
area
L
L
D
L
W
L
Figure 2
Dimensions of Layer Quality Area
SEMI P38-1103 © SEMI 2002, 2003 5
L
D
d
W
d
Defect
quality
area
L
Figure 3
Dimensions of Defect Quality Area
0%
20%
40%
60%
80%
13 13.2 13.4 13.6 13.8
Wavelength (nm)
Reflectivity
Median wavelength of mask = (λ
2
+ λ
1
)/2
Full width at half
maximum (FWHM)
Peak reflectivity
λ
2
λ
1
0%
20%
40%
60%
80%
13 13.2 13.4 13.6 13.8
Wavelength (nm)
Reflectivity
Median wavelength of mask = (λ
2
+ λ
1
)/2
Full width at half
maximum (FWHM)
Peak reflectivity
λ
2
λ
1
Median wavelength of EUV reflectivity of mask = (λ
2
+ λ
1
)/2
Figure 4
EUV Reflectivity of Multilayer Stack
Table 1 Mask Blank Type
Type Layers or groups of layers included in addition to the substrate
1 Conductive layer and multilayer stack
2 Conductive layer, multilayer stack, and absorber stack
3 Conductive layer, multilayer stack, absorber stack and resist
SEMI P38-1103 © SEMI 2002, 2003 6
Table 2 Ordering Information For Multilayer And Absorber Stacks On EUVL Mask Blanks
Property Requirement Included in order for Type 1 (See Note 1.)
Type Specified type from Table 1 Yes
Defect quality area Agreed upon between user and supplier Yes
Flatness Agreed upon between user and supplier Yes
Layer quality area Agreed upon between user and supplier Yes
Material composition of multilayers Agreed upon between user and supplier Yes
Composition of capping layers on the
multilayer stack
Agreed upon between user and supplier Yes
Multilayer stack mean median reflected
wavelength
Agreed upon between user and supplier Yes
Multilayer stack mean peak reflectivity Specified class from Table 5 Yes
Multilayer stack peak reflectivity
uniformity
Specified class from Table 6 Yes
Multilayer stack defects Specified class from Table 13 Yes
Absorber stack defects Specified class from Table 14 No
Absorber stack material composition Agreed upon between user and supplier No
Optical properties of absorber stack Specified class from Table 11 No
Electrical resistance measured between
the surface of the absorber stack and the
backside of the mask blank
Agreed upon between user and supplier No
Note 1: All items in Table 2 are included in the label for mask blank types 2 and 3.
Table 3 Properties of Multilayer Stack
Multilayer stack property Value
Material composition of layers Agreed upon between user and supplier
Stress Agreed upon between user and supplier
Capping layer thickness Agreed upon between user and supplier
Capping layer composition Agreed upon between user and supplier
Peak reflectivity change after 50 billion pulses in EUV
exposure tool (See Note 1.)
Agreed upon between user and supplier
Note 1: ≥ 1 mJ/cm
2
/pulse in a bandwidth that equals 2% of the nominal wavelength full width at half maximum (FWHM).
Table 4 Median Wavelength And Bandwidth Of EUV Reflectivity Of Multilayer Stack
Mean FWHM of reflectivity versus wavelength > 0.50 nm
Mean median reflected wavelength Agreed upon between user and supplier
Note 1: Mean is determined from measurements made at different spatial locations on the mask blank surface. Sample size and measurement
locations for determining mean are to be agreed upon between user and supplier.
Table 5 Peak EUV Reflectivity Of Multilayer Stack
Class Mean peak reflectivity
A > 67%
B 65–67%
C 63–65%
D 60–63%
Note 1: Mean is determined from measurements made at different spatial locations on the mask blank surface. Sample size and measurement
locations for determining mean are to be agreed upon between user and supplier.