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SEMI MF1811-0704 © SEMI 2003, 2004 16 Table 4 Values of the Estimates q R ) for Different Types of Detrending Followed by Different Types of W indow ing Type of Data Detrending Type of Window None Piston Piston+Tilt Full…

SEMI MF1811-0704 © SEMI 2003, 2004 15

Figure 1

Different Forms of the Measurement-Transfer or Instrumental-Response Function as a Function of Spatial

Frequency, f

Table 1 Simulated Height Data (N = 32)

n Z(n) n Z(n) n Z(n) n Z(n)

1 –38 9 –40 17 3 25 –35

2 15 10 45 18 6 26 23

3 36 11 20 19 17 27 4

4 22 12 3 20 20 28 –8

5 29 13 47 21 24 29 –45

6 –43 14 –18 22 16 30 26

7 –1 15 45 23 –5 31 1

8 –5 16 43 24 –17 32 6

Table 2 Periodogram Estimates (m)S

)

for Different

Types of Data Detrending Using a Rectangular

Window

m None Piston Piston+Tilt

Full

Quadratic

1 120.0500 0 0 0

2 205.9506 205.9506 182.5409 14.81781

3 142.1861 142.1861 137.3580 204.3631

4 56.98463 56.98463 44.47469 53.08546

5 147.9039 147.9039 139.6268 126.5831

6 58.60630 58.60630 55.67305 50.13899

7 248.4120 248.4120 264.7417 266.1277

8 152.8321 152.8321 158.6038 154.5160

9 185.1250 185.1250 192.8103 190.0105

10 28.81090 28.81090 26.22179 25.40131

11 28.61438 28.61438 27.90264 28.74841

12 153.1641 153.1641 145.7812 145.2367

13 356.5711 356.5711 366.4113 365.4717

14 199.1965 199.1965 202.6268 203.4514

15 41.53757 41.53757 40.26207 40.50671

16 163.6550 163.6550 168.8428 169.0258

17 16.20000 16.20000 17.87214 17.87215

Table 3 Periodogram Estimates (m)S

)

for Different

Types of Data Detrending Using a Blackman

Window

m None Piston Piston+Tilt

Full

Quadratic

1 312.4632 87.20874 90.11245 9.832211

2 536.6033 268.4217 260.2453 76.63136

3 195.1412 166.9871 162.0176 93.70938

4 1.046170 1.046172 1.041742 1.303189

5 30.14155 30.14156 30.16028 30.25176

6 54.87353 54.87350 54.91950 54.94658

7 188.9816 188.9818 188.8795 188.8293

8 74.45938 74.45934 74.50156 74.51955

9 45.28967 45.28967 45.27541 45.29324

10 59.40473 59.40471 59.41950 59.41210

11 94.24771 94.24768 94.23248 94.23342

12 202.7328 202.7328 202.7405 202.7253

13 289.7414 289.7414 289.7450 289.7637

14 130.1287 130.1287 130.1230 130.1162

15 76.22277 76.22275 76.22527 76.22248

16 62.42836 62.42840 62.42742 62.43071

17 5.585947 5.585948 5.585947 5.584926

SEMI MF1811-0704 © SEMI 2003, 2004 16

Table 4 Values of the Estimates

)

for Different Types of Detrending

Followed by Different Types of Windowing

Type of Data Detrending

Type of Window

None Piston Piston+Tilt Full Quadratic

Rectangular 26.13517 26.13517 26.05133 25.34362

Hann 25.49031 24.02299 23.91725 22.31003

Hamming 25.53997 24.26072 24.15406 22.58759

Blackman 25.29220 23.38999 23.30221 21.54917

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SEMI MF1982-1103 © SEMI 2003 1

SEMI MF1982-1103

TEST METHODS FOR ANALYZING ORGANIC CONTAMINANTS ON

SILICON WAFER SURFACES BY THERMAL DESORPTION GAS

CHROMATOGRAPHY

This standard was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved for publication by

the North American Regional Standards Committee on July 27, 2003. Initially available at www.semi.org

October 2003; to be published November 2003. Originally published by ASTM International as ASTM

F 1982-99. Last previous edition ASTM F 1982-99

ε1

1 Purpose

1.1 Organics are present in many materials, such as

plastics, lubricants, cleansers, soaps, and living tissues.

Some of these compounds are volatile and others can

become airborne through chemical reactions, heating,

abrasion, or outgassing. Also they can transfer to

wafers by direct contact or be left behind from solvent

residues. Once present in clean facilities, they can

deposit on wafer surfaces. Organics deposited on

wafers can cause degradation haze, wafer surface

tension changes, irregular oxidation rates, and other

effects, such as counter-doping by organophosphorus

compounds. Identification of trace level organic

contaminants is important in determining the source of

the particular contamination. These test methods use

the TD-GC technique to characterize and quantify

organics deposited on wafer surfaces.

1.2 Monitoring of organic contamination on wafer

surfaces also can be used to measure material

outgassing for proper selection of cleanroom,

construction, and wafer packaging materials.

2 Scope

2.1 These test methods cover the identification and

quantification of organic contaminants on silicon wafer

surfaces using a gas chromatograph interfaced to a mass

spectrometer (GC-MS) or a phosphorus selective

detector, or both.

2.2 These test methods describe the apparatus and

related procedures for sample preparation and analyses

by thermal desorption gas chromatography (TD-GC).

2.3 The range of detection limits of these test methods

depends on the target organic compounds, for example,

the range of detection limits is from the subpicogram to

the nanogram level of hydrocarbons (C

to C

) per

square centimeter of silicon wafer surface.

1 Fergason, L.A., “Analysis of Organic Impurities on Silicon Wafer

Surfaces,” Microcontamination, 4(4), 33-37, April 1986.

2 Saga, K. and Hattori, T., “Identification and Removal of Trace

Organic Contamination on Silicon Wafers Stored in Plastic Boxes,”

Journal of Electrochemical Society, 143, 3270-3284 (1996).

2.4 These test methods can be used for polished silicon

wafers, or silicon wafers with oxide films.

2.5 Two methods are described. Method A is

performed on cleaved wafers. Method B is performed

on full wafers. The detailed procedures of Method A

and Method B as well as the differences between them,

are described in Sections 5 and 7 .

2.6 Suitable safety precautions must be followed when

handling organic solvents and compounds, hot

materials subjected to propane flame, the propane flame

itself, wafer thermal desorption systems, rapid thermal

annealer, or a high temperature furnace.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the user of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Referenced Standards

3.1 ASTM Standard

D 6196 — Practice for Selection of Sorbents and

Pumped Sampling/Thermal Desorption Analysis

Procedures for Volatile Organic Compounds in Air

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

4 Terminology

4.1 Abbreviations and Acronyms

4.1.1 AED — atomic emission detector

4.1.2 C

— n-hexadecane, n-C

4.1.3 FID — flame ionization detector

4.1.4 FPD — flame photometric detector

4.1.5 GC — gas chromatography

3 Published in Volume 11.03 of Annual Book of ASTM Standards.

Available from ASTM International, 100 Barr Harbor Drive, West

Conshohoken, PA 19428-2959, USA. Telephone: 610.832.9585,

Fax: 610.832-9555, Web site: