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SEMI E126-0305 © SEMI 2003, 2005 5 Deposition (CVD) chemical reactio ns between gaseous components at or near the surface of the wafer, usually occurring at an elevated tem perature. Table 2 Equipment Type to EQIP A s so…

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7.4 Specification Mechanism — The listing and definitions of equipment types and EQIPs, and linking of EQIPs to
types are specified utilizing the following components.
7.4.1 Equipment Type Definitions Table — This table (Table 1) contains a definition of all equipment type
elements. Fields in this table include Equipment Type Name and Equipment Type Definition as specified in ¶7.2.
7.4.2 Equipment Type to EQIP Associations Table — This (Table 2) provides a linkage between equipment type
elements and EQIPs. Fields in this table include Equipment Type Name, and “linked” EQIPs.
7.4.3 EQIP Definitions and Format Table — This table (Table 3) contains a definition of all EQIPs specified.
Fields in this table include EQIP Name, EQIP Definition and Format Descriptor.
7.5 Adding to the List of Equipment Types — The standard is structured so that EQIPs for equipment types may be
added to an existing set, as the community reaches consensus on these additions. Further, EQIPs may be defined for
a new equipment type not previously addressed in this standard. Additions to the standard are made utilizing the
SEMI standards balloting process. §10 provides a template of a SEMI ballot for adding to the collection. The
following sub-sections define limitations in adding these equipment types and quality parameters.
7.5.1 Adding Equipment Types — Equipment types added shall comply with the specifications provided in this
document. No addition shall invalidate an existing type. Wherever possible, an equipment type should have a
corollary to a physically distinct classification of equipment or process.
7.5.2 Adding EQIPs — EQIPs added to the collection shall comply with the specifications provided in this
document. A EQIP shall be associated with at least one equipment type. An attempt should be made to define
quality parameters for a type that are exclusive of existing quality parameters.
8 Equipment Quality Information Parameter (EQIP) Specification
8.1 A list of equipment types currently specified, and a definition of each type is provided in Table 1.
8.2 A listing of EQIPs associated with each equipment type is provided in Table 2. Note that all types are required
to have EQIPs associated with them. Note that an EQIP may be associated with more than one equipment type.
8.3 A definition of each EQIP is provided in Table 3.
Table 1 Equipment Type Definitions
Equipment Type Name Equipment Type Definition
Removal Type of equipment that removes material from the surface of a wafer. The method of removal is not
restricted and could include chemical, physical, or nuclear/plasma, or a combination of these methods.
Polishing Type of equipment that removes material from the surface of a wafer using of physical and possibly
chemical means. The physical mechanism involves utilizing abrasive friction and/or grinding
methods. All chemical-mechanical polishers belong to this type, including rotary and linear polishers.
Equipment that utilize purely chemical or non-abrasive physical and chemical methods, such as
equipment commonly referred to as etchers, do not belong to this type.
Lithography Type of equipment cluster that transfers a pattern from a mask or reticle to a layer of resist deposited
on the surface of a wafer.
Deposition Type of equipment that adds material on the surface of a wafer. It does not include equipment that
adds content to the wafer, but does not add material to the surface of the wafer, such as implant. The
method of deposition is not restricted and could include chemical, physical, or nuclear/plasma, or a
combination of these methods.
Diffusion Type of equipment that enables the motion of species in solids in the direction of a concentration
gradient usually utilizing heat. The process often results in a layer (e.g., oxide) growing on the surface
of the wafer.
Etching Type of equipment that removes material from the surface of a wafer using chemical and possibly
physical means. It includes wet etching and dry etching. In wet etching the material is dissolved in
liquid chemicals; in dry etching, which includes reactive ion etching, the material is removed through
conversion into gaseous compounds.
Chemical Vapor A type of deposition equipment where films are deposited on the surface of the wafer as the result of
SEMI E126-0305 © SEMI 2003, 2005 5
Deposition (CVD) chemical reactions between gaseous components at or near the surface of the wafer, usually occurring
at an elevated temperature.
Table 2 Equipment Type to EQIP Association
Equipment Type Name EQIP (Required (Y/N)?) Comments
Removal Amount Removed (Y)
Polishing Amount Removed (Y), Uniformity (Y)
Deposition Amount Deposited (Y)
Lithography Overlay Offset (Y)
Lithography CD (Y)
Diffusion Resistivity (Y)
Etching Amount Removed (Y), CD (N), Uniformity
(N)
Chemical Vapor Deposition Amount Deposited (Y), Uniformity (N)
Table 3 EQIP Definitions
# EQIP Name EQIP Definition Format Descriptor Fields
1 Amount
Removed
The average amount of material removed from a wafer during the
course of a process. Amount Removed is computed as (average
thickness prior to removal step – average thickness directly after
removal process).
Name, Units, Validity
2 Uniformity A measure of the variation of thickness of a feature on a wafer.
It is calculated utilizing thickness data collected at different
points across the wafer. The number of data points can vary, but
is generally greater than or equal to five. Typical uniformity
metrics include the difference between the maximum and
minimum points, the variance or standard deviation of the points,
or the average difference between the center points and the outer
points, commonly referred to as “center-to-edge”. Definition of
method for calculating this parameter is outside the scope of this
standard.
Name, Units, Validity, Method of
Calculation
3 Amount
Deposited
The average amount of material deposited on a wafer during the
course of a process. Amount Deposited is computed as: (average
thickness directly after deposition process – average thickness
immediately prior to deposition step)
Name, Units, Validity
4 Overlay Offset A measure of the displacement of a feature at the top layer with
respect to another layer (usually the layer directly below it) on a
wafer. It is usually reported as a delta in the ‘X’ and ‘Y’
directions for each measured point on the wafer.
Name, Units, Validity
5 CD Critical Dimension — The average width of the smallest
patterned feature on the wafer.
Name, Units, Validity
6 Resistivity A material’s opposition to the flow of electric current usually
used to detect properties of buried features in a wafer.
Name, Units, Validity
9 Compliance to this Standard
9.1 This section defines requirements placed on equipment types for claiming compliance with this standard and
verifying compliance with this standard.
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9.2 Declaration of Equipment Type(s) — An equipment complying with this standard shall provide an indication
(i.e., declaration) of its equipment type or types. This declaration shall be determined through matching of
equipment description to the equipment type definitions in Table 1.
9.3 Specification of Linked Process Program Parameters — An equipment complying with this standard must
specify a non-null set of settable equipment process program parameters that can be altered to effect change of each
EQIP associated with this equipment type or types. These process program parameters are termed “linked process
program parameters”. It is not required that the actual mathematical relationship between each EQIP and associated
process program parameters be specified.
9.4 Method for Effecting Control of EQIPs — An equipment complying with this standard must support and specify
at least one SEMI standard method for individual actuation of each linked process program parameters. An EQIP is
not supported unless a SEMI standard method for effecting control of the EQIP through individual actuation of
linked process program parameters is supported and defined. The following are SEMI standard methods for
individual actuation of process program parameters that could be utilized.
9.4.1 SEMI E30 (Generic Model for Communications and Control of Manufacturing Equipment (GEM))
Application Note A.8: Process Parameter Modification for Process and Equipment Control — This specification
defines a method for effecting control of EQIPs utilizing the GEM “Equipment Constants” capability. These
Equipment Constants could be set up as Linked PPPs thereby enabling control of EQIPs. Refer to these sections of
SEMI E30 for a precise definition of the GEM capability to be used and an example of its use for process control.
9.4.2 SEMI E40 (Standard for Process Management) — This standard specifies a method for setting recipe
variables, which can be assigned a value at Process Job creation time, and can be adjusted at a later time. These
recipe variables could be set up as Linked PPPs, thereby enabling control of EQIPs. Refer to ¶¶7.5.4 and 10.4 of
SEMI E40 for additional information.
9.5 Compliance Sheets — Compliance to this standard by equipment shall be indicated with compliance sheets that
shall be provided with the equipment. Templates for the compliance sheets are provided in Tables 4 and 5.
9.5.1 EQIP and Linked PPP Support Compliance Sheet — A template for this compliance sheet is provided in
Table 4. This compliance sheet has the following fields:
9.5.1.1 Unique Identifier Corresponding to Equipment — This field provides for a unique identification of the
equipment type for that manufacturer. The contents of this field are manufacturer specific, but could include the
company name and equipment model number.
9.5.1.2 Equipment Type — This field will indicate the specific type or types, from Table 1, to which this equipment
belongs.
9.5.1.3 Listing of EQIPs — This field will indicate the EQIPs defined for each equipment type specified for this
equipment, copied from the list in Table 2 associated with each equipment type. Modifiers for this field will
indicate, for each EQIP, whether the EQIP is required and whether it is supported for this equipment model. Note
that if an EQIP is specified as required for that equipment type in Table 2, then this EQIP must be specified as
supported. If the EQIP is specified as optional for that equipment type then the field modifier shall indicate whether
that EQIP is supported.
9.5.1.4 Listing of Linked Process Program Parameters — This field will indicate, for each supported EQIP, a non-
null list of linked process program parameters.
9.5.1.5 Additional Information — This optional field will provide additional information that could include forms
of models relating EQIPs to linked process program parameters, value limits on actuation of these parameters,
preferred method(s) and timing for actuation of these parameters, and behavior of equipment in response to
actuation of these parameters. The contents of this field are manufacturer specific.
9.5.2 EQIP and Linked PPP Data Format Compliance Sheet — A template for this compliance sheet is provided in
Table 5. This compliance sheet has the following fields:
9.5.3 Listing of Supported EQIPs — This field is a listing of supported EQIPs. This is a subset of the listed EQIPs
in the corresponding “EQIP and Linked PPP Support Compliance Sheet” (see ¶9.5.1.3).
9.5.4 EQIP Format Descriptors — These fields collectively provide the description of the format of the supported
EQIPs. The fields shall be copied from the list for each supported EQIP specified in Table 3.