semi合集-English.pdf - 第4953页
SEMI M11-0704 © SEMI 1988, 2004 10 Figure 8 Composite Defect of polysilico n gr owth and stacking faults. Magnification 100 0 times by Nomarksi Interference Microscopy. Approximat e SSIS image event siz e >>1.0 µm …
SEMI M11-0704 © SEMI 1988, 2004 9
Figure 7
The Epitaxial Stacking Fault Cluster classification is used to define a group of ESFs in close proximity on the
wafer surface. The group can either be overlapping or in a line (except when the line appears to be part of a
Pre-Epi Scratch). Magnification 500 times using Nomarski Interference Microscopy. Approximate SSIS
event size, 0.20 µm
20
µ
m
SEMI M11-0704 © SEMI 1988, 2004 10
Figure 8
Composite Defect of polysilicon growth and stacking faults. Magnification 1000 times by Nomarksi
Interference Microscopy. Approximate SSIS image event size >>1.0 µm
2
µ
m
SEMI M11-0704 © SEMI 1988, 2004 11
Figure 9
The Compound ESF defect is an epi stacking fault that has a broken surface, but maintains the square shape
of an ESF. It typically scatters more light than a normal ESF because of the extra facets, so it is sized larger
in a SSIS. Magnification 500 times using Nomarski Interference Microscopy. Approximate SSIS event size:
280 µm
5
µ
m