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SEMI M38-1104 © SEMI 1999, 2004 3 8.2 In the interest of controlling inspection costs, the supplier and the purc haser ma y agree that the m aterial shall be certified as “capable of m eeting” certain requirements. In th…

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SEMI M38-1104 © SEMI 1999, 2004 2
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions of terms related to silicon wafer
technology are given in SEMI M1 and in SEMI
MF1241.
4.2 The following definitions apply in the context of
this specification:
4.2.1 furnace wafer — a silicon wafer suitable for
monitoring thermal processes or as an implant monitor,
usually used only in a cleanroom environment.
4.2.2 lithography wafer — a silicon wafer used
specifically for testing lithography equipment wherein
surface flatness is the key attribute, usually used only in
a cleanroom environment.
4.2.3 mechanical wafer — a silicon wafer suitable for
equipment or process testing, usually outside of a
cleanroom environment.
4.2.4 particle wafer — a silicon wafer suitable for
monitoring area or process cleanliness, used only in a
cleanroom environment.
4.2.5 reclaimed wafer — a silicon wafer that has been
reconditioned for subsequent utilization.
5 Ordering Information
5.1 Purchase orders for reclaimed silicon wafers
furnished to this specification shall minimally include
the following items:
5.1.1 Nominal diameter,
5.1.2 Type of application (mechanical, furnace,
particle, lithography, 180 nm, or 130 nm),
5.1.3 A statement that the wafers are customer-
supplied or third-party sourced,
5.1.4 Resistivity,
5.1.5 Any other requirement specified by the customer
(indicated as “customer specified” in the tables),
5.1.6 Any requirements that differ from the tables, and
5.1.7 Methods of testing specified attributes for which
either no or multiple test methods exist (see Sections
7.2 and 7.3.
5.2 Customer specified requirements other than
resistivity may include:
5.2.1 Nominal edge exclusion for FQA,
5.2.2 Wafer ID marking,
5.2.2.1 For 300 mm wafers, whether the wafers are to
be re-inscribed as specified in Appendix 1 or not,
5.2.3 Pits, haze, and/or back surface roughness
(particle or lithography wafers),
5.2.4
Localized light scatterers, and
5.2.5 Edge condition (for 200 and 300 mm wafers
only),
5.3 In addition the following optional criteria may be
included in a purchase order:
5.3.1 Minimum removal requirements (if any),
5.3.2 Lot traceability and lot integrity maintenance
requirements,
5.3.3 Lot acceptance criteria,
5.3.4 Certification, and
5.3.5 Packing and Marking.
5.3.5.1 Note that for packing and marking of 300 mm
wafers, the requirements of SEMI M31 and SEMI M45
shall be observed.
6 Requirements
6.1 The wafers shall conform to the parameters as
specified in the appropriate column of Table 1, Table 2,
or Table 3, as augmented and amended by the purchase
order.
6.2 The wafers shall be capable of being reconditioned
for use.
7 Test Methods
7.1 Values of attributes specified in the tables or
purchase order shall be tested in accordance with the
test methods indicated for the attribute in SEMI M1 or
SEMI M18. Sampling for the test shall be done in
accordance with the requirements of SEMI M1.
7.2 If multiple tests are described for any attribute, the
purchase order shall indicate which test shall be used,
unless the supplier of the reclaimed wafers can make
the choice.
7.3 If no standardized test is available for any attribute,
the test method to be used shall be agreed upon between
purchaser and supplier.
8 Certification
8.1 Upon request of the purchaser in the contract or
order, a manufacturer’s or supplier’s certification that
the material was manufactured and tested in accordance
with this specification, together with a report of the test
results, shall be furnished at the time of shipment.
SEMI M38-1104 © SEMI 1999, 2004 3
8.2 In the interest of controlling inspection costs, the
supplier and the purchaser may agree that the material
shall be certified as “capable of meeting” certain
requirements. In this context, “capable of meeting”
shall signify that the supplier is not required to perform
the appropriate tests in Section 9. However, if the
purchaser performs the test and the material fails to
meet the requirement, the material may be subject to
rejection.
9 Packing and Marking
9.1 Special packing requirements shall be subject to
agreement between the supplier and the purchaser.
Otherwise all wafers shall be handled, inspected, and
packed in such a manner as to avoid chipping,
scratches, and contamination, and in accordance with
the best industry practices, to provide ample protection
against damage during shipment.
9.2 The wafers supplied under this specification shall
be identified by appropriately labeling the outside of
each box or other container and each subdivision
thereof in which it may reasonably be expected that the
wafers will be stored prior to further processing.
9.3 For 300 mm wafers, the packing and marking
requirements of SEMI M31 and SEMI M45 shall be
met.
Table 1 Specifications for 150 mm, 200 mm, and 300 mm Silicon Reclaim Wafers
Item Mechanical Furnace Particle Lithography
1.0
General Characteristics
1.1 Growth Method As-supplied
1.2 Crystal Orientation As-supplied
1.3 Conductivity Type As-supplied
1.4 Dopant As-supplied
1.5 Nominal Edge Exclusion for FQA Unspecified Customer specified
2.0
Electrical Characteristics
2.1 Resistivity Customer specified
2.2 Radial Resistivity Variation (RRG) Unspecified
2.3 Resistivity Striations Unspecified
2.4 Minority Carrier Lifetime Unspecified
3.0
Chemical Characteristics
3.1 Oxygen Concentration Unspecified As-supplied Unspecified
3.2 Radial Oxygen Variation Unspecified As-supplied Unspecified
3.3 Carbon Concentration Unspecified As-supplied Unspecified
4.0
Structural Characteristics
4.1 Dislocation Etch Pit Density Unspecified None
4.2 Slip Unspecified None
4.3 Lineage Unspecified None
4.4 Twins Unspecified None
4.5 Swirl Unspecified
4.6 Shallow Pits Unspecified
4.7 OISF Unspecified
4.8 Oxide Precipitates Unspecified
5.0
Wafer Preparation Characteristics
5.1 Wafer ID Marking Customer specified
5.2 Front Surface Thin Films Unspecified None Unspecified None
5.3 Denuded Zone Unspecified
5.4 Extrinsic Gettering Unspecified None Unspecified None
5.5 Backseal Unspecified None Unspecified None
5.6 Annealing Unspecified
SEMI M38-1104 © SEMI 1999, 2004 4
Item Mechanical Furnace Particle Lithography
6.0
Mechanical Characteristics
6.1 Diameter
150 mm ± 0.50 mm
200 mm ± 0.50 mm
300 mm ± 0.50 mm
6.2 Primary Flat/Notch Dimension As-supplied
6.3 Primary Flat/Notch Orientation As-supplied
6.4 Secondary Flat Dimension (if Applicable) As-supplied
6.5 Secondary Flat Location (if Applicable) As-supplied
6.6 Edge Profile Unspecified
6.7 Thickness
150 mm (SEMI M1.8) 533–675 µm
150 mm (SEMI M1.13) 585–725 µm
200 mm 600–775 µm
300 mm 650–800 µm
6.8 Thickness Variation (TTV) Unspecified
6.9 Surface Orientation As-supplied
6.10 Bow Unspecified
6.11 Warp (for diameters other than 300 mm) Unspecified
Warp (for 300 mm only) Unspecified
6.12 Sori Unspecified Customer
specified
6.13 Flatness/Global Unspecified Customer
specified
6.14 Flatness/Site Unspecified Customer
specified
7.0
Front Surface Chemistry
7.1 Surface Metal Contamination
Sodium Unspecified Customer
specified
Unspecified
Aluminum Unspecified Customer
specified
Unspecified
Potassium Unspecified Customer
specified
Unspecified
Chromium Unspecified Customer
specified
Unspecified
Iron Unspecified Customer
specified
Unspecified
Nickel Unspecified Customer
specified
Unspecified
Copper Unspecified Customer
specified
Unspecified
Zinc Unspecified Customer
specified
Unspecified
7.2 Surface Organics Unspecified
8.0
Front Surface Visual Characteristics
8.1A Scratches (macro) – total length Unspecified None
8.1B Scratches (micro) – total length Unspecified
0.10 × Diameter
8.2 Pits Unspecified Customer specified
8.3 Haze Unspecified Customer specified