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SEMI F63-0701 © SEMI 2001 1 SEMI F63-0701 GUIDELINES FOR ULTR A PURE W A TER USED IN SEMICONDUCTOR PROCESSING This spe cification was te chnically approve d by the Global Fa cilities Comm ittee and is the direc t respons…

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SEMI F62-0701 © SEMI 200115
APPENDIX 1
NOTE: This appendix is being balloted as an official part of SEMI F062-0701 by full letter ballot procedure.
Determination of the suitability of the material herein is solely the responsibility of the user.
(Mandatory Information)
A1-1 Reference Values
Ambient Temperature 23 ±2°C
Gas Temperature Same as Ambient
Ambient Pressure 101.3 kPa +4.7 kPa
(1013 mbar +4.7 kPa - 15.3 kPa)
Gas Pressure, Inlet 274 ± 34 kPa
Gas Pressure, Outlet 101.3 kPa
Gas Pressure, Inlet 172 ± 34 kPa
Gas Pressure, Outlet < 0.13 kPa
Relative Humidity 40% ± 10%, Noncondensing
Magnetic Field < 50 µT
Electromagnetic Field < 100 µV/m
Vibration < 0.5 m/s
Shock 3g
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacture's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publications of this standard, Semiconductor Equipment
and Materials International (SEMI) takes no position respecting the validity of any patent rights or copyrights
asserted in connection with any items mentioned in this standard. Users of this standard are expressly advised that
determination of any such patent rights or copyrights, and the risk of infringement of such rights are entirely their
own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI F63-0701 © SEMI 20011
SEMI F63-0701
GUIDELINES FOR ULTRAPURE WATER USED IN SEMICONDUCTOR
PROCESSING
This specification was technically approved by the Global Facilities Committee and is the direct
responsibility of the North American Facilities Committee. Current edition approved by the North American
Facilities Committee on April 30, 2001. Initially available at www.semi.org May 2001; to be published July
2001.
1 Purpose
1.1 This guide is provided for multiple purposes. It
may be used as a basis for establishing performance
criteria for purchases of new UPW equipment. It may
also be used internally by facility engineers to set
process control parameters for the operation of their
UPW systems. This guide may be used by process
engineers to establish reasonable expectations about the
quality of the UPW being supplied to them by facilities.
NOTICE: These suggested guidelines are published as
technical information and are intended for
informational purposes only.
2 Scope
2.1 Water is used extensively in the production of
semiconductor devices for all wet processing steps such
as the rinsing of wafers. Ultrapure Water (UPW) is
typically produced for this purpose using Reverse
Osmosis/Deionized resin bed technologies. The quality
of the water impacts device yield and as linewidths
decrease, requirements for higher purity water may
increase.
2.2 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety health practices and determine the
applicability or regulatory limitations prior to use.
3 Referenced Standards
NOTE 1: As listed or revised, all documents cited shall be the
latest publications of adopted standards.
3.1 SEMI Standards
SEMI F61 — Guide For Ultrapure Water System Used
in Semiconductor Processing
3.2 ASTM Standards
1
ASTM D-5127 — Standard Guide for Ultra Pure Water
Used in the Electronics and Semiconductor Industry.
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, PA 19428-2959, website: www.astm.org
ASTM F-1094 — Test Method For Microbiological
Monitoring of Water Used For Processing Electron and
Microelectronic Devices by Direct- Pressure Tap
Sampling Valve and by the Pre-sterilized Plastic Bag
Method.
4 Limitations
4.1 This guide is not intended to set an absolute
number for performance of a particular UPW system.
Performance guidelines should be determined based on
the design of the UPW system, the components used in
the water system, the sensitivity of the manufacturing
process to the purity of the water, the sensitivity of the
instrumentation, and the budget available to maintain
and monitor the water system.
4.2 This set of guidelines has been established from a
variety of sources and inputs including 1.) an industry
survey that SEMI provided to members of its standards
activities in facilities; 2.) typical UPW levels from a
large selection of semiconductor UPW systems as
measured by several independent laboratories that test
high purity water for the semiconductor industry; 3.)
specifications from water system equipment
manufacturers; 4.) and input from producers and users
of UPW during SEMI standards committee meetings
and through the balloting process. However, it is up to
each individual owner of a UPW system to set
specifications for the purity of its water based on its
own needs and available resources.
4.3 This guide is reflective of a particular design
approach for a UPW system. The guidelines can be
produced from a properly maintained UPW system as
described and diagrammed in SEMI F61 and is typical
output from existing high-end semiconductor
manufacturing plants with state-of-the-art water
systems. The purity of water generated in other types of
water systems may differ greatly.
4.4 The guidelines are targeted to UPW produced for
semiconductor manufacturing. There exists an ASTM
standard D5127 which should be considered in setting
specifications for the purity of reagent grade water
needed in a laboratory for analytical testing of
semiconductor materials and process chemicals.
SEMI F63-0701 © SEMI 2001 2
5 Use of the Guidelines
5.1 Sampling methods and contamination control are
of paramount importance when attempting to measure
the listed parameters at the levels specified.
5.2 The quality of the data measured will depend on
which testing method and calibration techniques are
used. Consequently, trends observed in the values may
be more meaningful than absolute values.
6 Units
6.1 Parts per billion (ppb) is equivalent to ng/mL or
µg/L.
6.2 Parts per million (ppm) is equivalent to mg/L.
6.3 Micron is a unit of length equal to one millionth of
a meter, or one thousandth of a millimeter.
6.4 Colony Forming Units (CFU) is a measurement of
bacteria organisms.
7 Description of Parameter Tests
NOTE 2: Since SEMI Guidelines do not require analytical
data or methods to support them, the recommendation of
specific analytical methods are only for informational
purposes. Alternative methods may also be applicable.
7.1 Resistivity (megohm-centimeters or Mohm–cm)
7.1.1 Resistivity (conductivity) is only measured
accurately with on-line instrumentation.18.25 MOhm is
the theoretical upper limit for pure water at 25
°
C.
7.2 Total Oxidizable Carbon (TOC) (ppb)
7.2.1 Involves oxidation of organic materials and
detection of carbon dioxide produced by the reaction, as
measured in conductivity or infrared photometry.
7.3 Dissolved oxygen (ppb) is onl y measured
accurately with on-line instrumentation.
7.4 Particulate Matter (Particles/L )
7.4.1 On-line methods using laser technology are
recommended for accurate trend analysis.
7.5 Bacteria (CFU/L)
7.5.1 Triplicate samples are cultured based on the
ASTM method F 1094 using a minimum sample size of
1L.
7.6 Silica
7.6.1 Total Silica (ppb) may be measured by Graphite
Furnace Atomic Absorption Spectrophotometry
(GFAAS), Inductively-Coupled Plasma Atomic
Emission Spectroscopy (ICP-AES) or Inductively
Coupled Plasma Mass Spectroscopy ( ICP-MS).
7.6.2 Dissolved Silica (ppb as SiO
2
) may be measured
by heteropoly blue photometry or by Ion
Chromatography.
7.7 Ions and Metals (ppb)
7.7.1 Many anions and cations may be determined
using Ion Chromatography.
7.7.2 Up to 68 metals may be determined by GFAAS,
ICP-AES, or ICP-MS. Most typically measured metals
are shown in Table 1.
8 Parameters and Typical Concentrations
8.1 Table 1 lists each parameter with its range of
performance.
Table 1 Parameters and Range of Performance
Typical Linewidth 0.13 to 0.5 MICRONS
PARAMETER RANGE OF
PERFORMANCE
Resistivity on-line @ 25
°
C
(Mohm–cm)
17.9 to 18.2
TOC on-line (ppb)
1 to 5
Dissolved Oxygen on-line
(ppb)
0.5 to 20
On-line Particles/L
(micron range)
0.05–0.1 100 to 1000
0.1–0.2 50 to 500
0.2–0.3 20 to 100
0.3–0.5 10 to 50
> 0.5 0 to 4
Bacteria (CFU/L)
1 L Sample 0 to 5
Silica
Silica - total (ppb) 0.5 to 3
Silica - dissolved
(ppb as SiO
2
)
0.2 to 1
Ions & Metals (ppb)
Ammonium 0.02 to 0.1
Bromide 0.02 to 0.1
Chloride 0.02 to 0.1
Fluoride 0.02 to 0.1
Nitrate 0.02 to 0.1
Nitrite 0.02 to 0.1
Phosphate 0.02 to 0.1
Sulphate 0.02 to 0.1
Aluminum 0.02 to 0.1
Barium 0.02 to 0.1
Boron 0.02 to 20
Calcium 0.02 to 0.1
Chromium 0.02 to 0.1